IRLU014 Vishay, IRLU014 Datasheet

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IRLU014

Manufacturer Part Number
IRLU014
Description
MOSFET N-CH 60V 7.7A I-PAK
Manufacturer
Vishay
Datasheet

Specifications of IRLU014

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
200 mOhm @ 4.6A, 5V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
7.7A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
8.4nC @ 5V
Input Capacitance (ciss) @ Vds
400pF @ 25V
Power - Max
2.5W
Mounting Type
Through Hole
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Transistor Polarity
N Channel
Continuous Drain Current Id
7.7A
Drain Source Voltage Vds
60V
On Resistance Rds(on)
200mohm
Rds(on) Test Voltage Vgs
5V
Threshold Voltage Vgs Typ
2V
Configuration
Single
Resistance Drain-source Rds (on)
0.2 Ohms
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 10 V
Continuous Drain Current
7.7 A
Power Dissipation
2.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant, Contains lead / RoHS non-compliant
Other names
*IRLU014

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRLU014
Manufacturer:
IR
Quantity:
10 000
Part Number:
IRLU014N
Manufacturer:
INTERNATIONAL RECTIFIER
Quantity:
30 000
Part Number:
IRLU014PBF
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
IRLU014PBF
Quantity:
675
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91321
S10-1139-Rev. C, 17-May-10
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Linear Derating Factor (PCB Mount)
Single Pulse Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
(TO-252)
D
DS
DS(on)
g
gs
gd
SD
DPAK
DD
(Max.) (nC)
(nC)
(V)
(nC)
≤ 10 A, dI/dt ≤ 90 A/μs, V
= 25 V, starting T
(Ω)
G
S
D
(TO-251)
IPAK
a
J
= 25 °C, L = 924 μH, R
G
c
D S
DD
b
V
≤ V
GS
e
DS
= 5.0 V
, T
G
J
N-Channel MOSFET
e
≤ 150 °C.
DPAK (TO-252)
SiHLR014-GE3
IRLR014PbF
SiHLR014-E3
IRLR014
SiHLR014
Single
8.4
3.5
6.0
60
g
= 25 Ω, I
C
D
S
= 25 °C, unless otherwise noted
Power MOSFET
V
0.20
IRLR014, IRLU014, SiHLR014, SiHLU014
GS
AS
at 5.0 V
= 7.7 A (see fig. 12).
T
T
C
A
for 10 s
= 25 °C
= 25 °C
DPAK (TO-252)
-
IRLR014TRPbF
SiHLR014T-E3
IRLR014TR
SiHLR014T
T
T
C
C
= 100 °C
= 25 °C
FEATURES
• Halogen-free According to IEC 61249-2-21
• Dynamic dV/dt Rating
• Surface Mount (IRLR014, SiHLR014)
• Straight Lead (IRLU014, SiHLU014)
• Available in Tape and Reel
• Logic-Level Gate Drive
• R
• Fast Switching
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRLU, SiHLU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
Definition
DS(on)
a
a
a
a
Specified at V
SYMBOL
T
dV/dt
J
V
V
E
I
, T
P
device
DM
I
GS
DS
AS
D
D
stg
DPAK (TO-252)
SiHLR014TRL-GE3
IRLR014TRLPbF
SiHLR014TL-E3
IRLR014TRL
SiHLR014TL
GS
design,
= 4 V and 5 V
- 55 to + 150
a
a
LIMIT
0.020
a
260
± 10
0.20
27.4
a
7.7
4.9
2.5
4.5
60
31
25
low
Vishay Siliconix
d
IPAK (TO-251)
SiHLU014-GE3
IRLU014PbF
SiHLU014-E3
IRLU014
SiHLU014
on-resistance
www.vishay.com
UNIT
W/°C
V/ns
mJ
°C
W
V
A
and
1

Related parts for IRLU014

IRLU014 Summary of contents

Page 1

... Power MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 60 Definition 0.20 • Dynamic dV/dt Rating • Surface Mount (IRLR014, SiHLR014) 8.4 • Straight Lead (IRLU014, SiHLU014) 3.5 • Available in Tape and Reel 6.0 • Logic-Level Gate Drive Single • R DS(on) • Fast Switching D • ...

Page 2

... IRLR014, IRLU014, SiHLR014, SiHLU014 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...

Page 3

... TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig Typical Output Characteristics, T Fig Typical Output Characteristics, T Document Number: 91321 S10-1139-Rev. C, 17-May-10 IRLR014, IRLU014, SiHLR014, SiHLU014 = 25 °C Fig Typical Transfer Characteristics C Fig Normalized On-Resistance vs. Temperature = 150 °C C Vishay Siliconix www.vishay.com 3 ...

Page 4

... IRLR014, IRLU014, SiHLR014, SiHLU014 Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 91321 S10-1139-Rev. C, 17-May-10 ...

Page 5

... Fig Maximum Drain Current vs. Case Temperature Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91321 S10-1139-Rev. C, 17-May-10 IRLR014, IRLU014, SiHLR014, SiHLU014 Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit d(on) Fig. 10b - Switching Time Waveforms ...

Page 6

... IRLR014, IRLU014, SiHLR014, SiHLU014 Vishay Siliconix Vary t to obtain p required I AS D.U. 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com Fig. 12b - Unclamped Inductive Waveforms Fig. 12c - Maximum Avalanche Energy vs. Drain Current V DS ...

Page 7

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91321. Document Number: 91321 S10-1139-Rev. C, 17-May-10 IRLR014, IRLU014, SiHLR014, SiHLU014 Peak Diode Recovery dV/dt Test Circuit + Circuit layout considerations • Low stray inductance • ...

Page 8

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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