IRF9530STRLPBF Vishay, IRF9530STRLPBF Datasheet
IRF9530STRLPBF
Specifications of IRF9530STRLPBF
Related parts for IRF9530STRLPBF
IRF9530STRLPBF Summary of contents
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... D package. The D P-Channel MOSFET applications because of its low internal connection resistance and can dissipate typical surface mount application PAK (TO-263) D PAK (TO-263) SiHF9530S-GE3 SiHF9530STRL-GE3 IRF9530SPbF IRF9530STRLPbF SiHF9530S-E3 SiHF9530STL-E3 IRF9530S IRF9530STRL SiHF9530S SiHF9530STL = 25 °C, unless otherwise noted ° 100 ° ...
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... IRF9530S, SiHF9530S Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...
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... Document Number: 91077 S10-1728-Rev. B, 02-Aug- µs Pulse Width ° 91077_03 = 25 ° 4 µs Pulse Width T = 175 ° 91077_04 = 175 °C Fig Normalized On-Resistance vs. Temperature C IRF9530S, SiHF9530S Vishay Siliconix ° ° 10 175 C 20 µs Pulse Width Gate-to-Source Voltage ( Fig Typical Transfer Characteristics 3.0 ...
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... IRF9530S, SiHF9530S Vishay Siliconix 1800 MHz iss gs 1500 rss oss ds 1200 C 900 C 600 300 Drain-to-Source Voltage ( 91077_05 Fig Typical Capacitance vs. Drain-to-Source Voltage Total Gate Charge (nC) 91077_06 G Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com Shorted iss 10 oss rss 10 91076_07 Fig Typical Source-Drain Diode Forward Voltage ...
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... Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91077 S10-1728-Rev. B, 02-Aug-10 125 150 175 Single Pulse (Thermal Response Rectangular Pulse Duration (s) 1 IRF9530S, SiHF9530S Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit ...
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... IRF9530S, SiHF9530S Vishay Siliconix Vary t to obtain p required I AS D.U. 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit 91077_12c Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com Fig. 12b - Unclamped Inductive Waveforms 1200 Top ...
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... Note Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91077. Document Number: 91077 S10-1728-Rev ...
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... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...