SUM40N10-30-E3 Vishay, SUM40N10-30-E3 Datasheet

MOSFET N-CH 100V 40A D2PAK

SUM40N10-30-E3

Manufacturer Part Number
SUM40N10-30-E3
Description
MOSFET N-CH 100V 40A D2PAK
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SUM40N10-30-E3

Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
30 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
40A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
60nC @ 10V
Input Capacitance (ciss) @ Vds
2400pF @ 25V
Power - Max
3.75W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.03 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
10 S
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
40 A
Power Dissipation
3750 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
40A
Drain Source Voltage Vds
100V
On Resistance Rds(on)
34mohm
Rds(on) Test Voltage Vgs
20V
Threshold Voltage Vgs Typ
4V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SUM40N10-30-E3
SUM40N10-30-E3TR
Notes:
a. Duty cycle ≤ 1 %.
b. See SOA curve for voltage derating.
c. When Mounted on 1" square PCB (FR-4 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 72134
S-80272-Rev. B, 11-Feb-08
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
Junction-to-Case (Drain)
V
(BR)DSS
Ordering Information: SUM40N10-30
100
(V)
G
Top View
TO-263
D
0.030 at V
0.034 at V
S
SUM40N10-30-E3 (Lead (Pb)-free)
r
N-Channel 100-V (D-S) 175 °C MOSFET
DS(on)
J
a
a
= 175 °C)
GS
GS
(Ω)
= 10 V
= 6 V
C
I
= 25 °C, unless otherwise noted
D
37.5
40
(A)
(PCB Mount)
T
T
T
L = 0.1 mH
T
C
A
C
C
= 125 °C
= 25 °C
= 25 °C
= 25 °C
c
c
FEATURES
• TrenchFET
• 175 °C Junction Temperature
• Low Thermal Resistance Package
Symbol
Symbol
T
R
J
R
V
V
E
I
I
P
, T
DM
I
AR
thJC
GS
thJA
DS
AR
D
D
®
stg
Power MOSFETS
G
N-Channel MOSFET
- 55 to 175
Limit
Limit
± 20
107
3.75
100
1.4
40
23
75
35
61
40
SUM40N10-30
D
S
b
Vishay Siliconix
www.vishay.com
°C/W
Unit
Unit
RoHS*
mJ
COMPLIANT
°C
W
V
A
Available
1

Related parts for SUM40N10-30-E3

SUM40N10-30-E3 Summary of contents

Page 1

... DS(on) 0.030 100 0.034 TO-263 Top View Ordering Information: SUM40N10-30 SUM40N10-30-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 175 °C) J Pulsed Drain Current Avalanche Current a Repetitive Avalanche Energy a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... SUM40N10-30 Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance c Total Gate Charge ...

Page 3

... Drain Current (A) D Transconductance 3000 C iss 2400 1800 1200 600 C rss C oss Drain-to-Source Voltage (V) DS Capacitance Document Number: 72134 S-80272-Rev. B, 11-Feb- °C 125 ° 100 SUM40N10-30 Vishay Siliconix 125 ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics 0.08 0.06 0. 0.02 0. Drain Current (A) D On-Resistance vs ...

Page 4

... SUM40N10-30 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 2.0 1.5 1.0 0.5 0 Junction Temperature (°C) J On-Resistance vs. Junction Temperature 1000 100 150 ° 0.1 0.00001 0.0001 0.001 t (s) in Avalanche Current vs. Time www.vishay.com 4 100 125 150 175 = 25 °C A 0.01 0.1 1 100 T = 150 °C ...

Page 5

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72134. Document Number: 72134 S-80272-Rev. B, 11-Feb-08 100 125 150 175 - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case SUM40N10-30 Vishay Siliconix 1000 Limited by r DS(on) * 100 °C C Single Pulse 0.1 0.1 ...

Page 6

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

Related keywords