MOSFET N-CH 500V 4.2A TO-220F

FDPF5N50NZF

Manufacturer Part NumberFDPF5N50NZF
DescriptionMOSFET N-CH 500V 4.2A TO-220F
ManufacturerFairchild Semiconductor
SeriesUniFET-II™
FDPF5N50NZF datasheet
 

Specifications of FDPF5N50NZF

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs1.75 Ohm @ 2.1A, 10VDrain To Source Voltage (vdss)500V
Current - Continuous Drain (id) @ 25° C4.2AVgs(th) (max) @ Id5V @ 250µA
Gate Charge (qg) @ Vgs12nC @ 10VInput Capacitance (ciss) @ Vds485pF @ 25V
Power - Max30WMounting TypeThrough Hole
Package / CaseTO-220-3 Full PackTransistor PolarityN-Channel
Resistance Drain-source Rds (on)1.57 OhmsForward Transconductance Gfs (max / Min)4.2 S
Drain-source Breakdown Voltage500 VContinuous Drain Current2.5 A to 4.2 A
Power Dissipation30 WMaximum Operating Temperature+ 150 C
Mounting StyleThrough HoleGate Charge Qg9 nC
Minimum Operating Temperature- 55 CLead Free Status / RoHS StatusLead free / RoHS Compliant
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FDP5N50NZF / FDPF5N50NZF
N-Channel MOSFET
500V, 4.2A, 1.75
Features
• R
= 1.57 ( Typ.)@ V
= 10V, I
DS(on)
GS
• Low Gate Charge ( Typ. 9nC)
• Low C
( Typ. 4pF)
rss
• Fast Switching
• 100% Avalanche Tested
• Improved dv/dt Capability
• ESD Imoroved Capability
• RoHS Compliant
TO-220
G D S
FDP Series
MOSFET Maximum Ratings
Symbol
V
Drain to Source Voltage
DSS
V
Gate to Source Voltage
GSS
I
Drain Current
D
I
Drain Current
DM
E
Single Pulsed Avalanche Energy
AS
I
Avalanche Current
AR
E
Repetitive Avalanche Energy
AR
dv/dt
Peak Diode Recovery dv/dt
P
Power Dissipation
D
T
, T
Operating and Storage Temperature Range
J
STG
Maximum Lead Temperature for Soldering Purpose,
T
L
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
R
Thermal Resistance, Junction to Case
JC
R
Thermal Resistance, Case to Heat Sink Typ.
CS
R
Thermal Resistance, Junction to Ambient
JA
©2010 Fairchild Semiconductor Corporation
FDP5N50NZF / FDPF5N50NZF Rev. A
Description
= 2.1A
These N-Channel enhancement mode power field effect transis-
D
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advance technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
cient switching mode power supplies and active power factor
correction.
TO-220F
G
D
S
FDPF Series
(potted)
o
T
= 25
C unless otherwise noted*
C
Parameter
o
-Continuous (T
= 25
C)
C
o
-Continuous (T
= 100
C)
C
- Pulsed
(Note 1)
(Note 2)
( Note 1)
(Note 1)
(Note 3)
o
(T
= 25
C)
C
o
- Derate above 25
C
Parameter
1
February 2010
UniFET-II
D
D
G
G
S
S
FDP5N50NZF
FDPF5N50NZF
500
±25
4.2
4.2*
2.5
2.5*
16
16*
165
4.2
7.8
15
78
30
0.62
0.24
-55 to +150
300
FDP5N50NZF
FDPF5N50NZF
1.6
4.1
0.5
-
62.5
62.5
www.fairchildsemi.com
TM
tm
Units
V
V
A
A
mJ
A
mJ
V/ns
W
o
W/
C
o
C
o
C
Units
o
C/W

FDPF5N50NZF Summary of contents

  • Page 1

    ... R Thermal Resistance, Case to Heat Sink Typ. CS R Thermal Resistance, Junction to Ambient JA ©2010 Fairchild Semiconductor Corporation FDP5N50NZF / FDPF5N50NZF Rev. A Description = 2.1A These N-Channel enhancement mode power field effect transis- D tors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to mini- ...

  • Page 2

    ... Repetitive Rating: Pulse width limited by maximum junction temperature 18.7mH 4.2A 50V 25, Starting 4.2A, di/dt  200A/s, V  Starting DSS 4. Essentially Independent of Operating Temperature Typical Characteristics FDP5N50NZF / FDPF5N50NZF Rev. A Package Reel Size TO-220 - TO-220F - unless otherwise noted C Test Conditions I = 250 0V, T ...

  • Page 3

    ... Drain Current [A] D Figure 5. Capacitance Characteristics 800 ( C iss = shorted C oss = rss = C gd 600 400 *Note 1MHz 200 0 0 Drain-Source Voltage [V] DS FDP5N50NZF / FDPF5N50NZF Rev. A Figure 2. Transfer Characteristics 10 1 *Notes:  1. 250 s Pulse Test 0 Figure 4. Body Diode Forward Voltage 20V GS o *Note: T ...

  • Page 4

    ... T , Junction Temperature J Figure 9. Maximum Drain Current Case Temperature [ C Figure 10. Transient Thermal Response Curve-FDPF5N50NZF 4.3 0.5 1 0.2 0.1 0.05 0.02 0.1 0.01 Single pulse 0. FDP5N50NZF / FDPF5N50NZF Rev. A (Continued) Figure 8. Maximum Safe Operating Area 30 10 0.1 *Notes  ...

  • Page 5

    ... FDP5N50NZF / FDPF5N50NZF Rev. A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...

  • Page 6

    ... FDP5N50NZF / FDPF5N50NZF Rev. A Peak Diode Recovery dv/dt Test Circuit & Waveforms + + • • • I • www.fairchildsemi.com ...

  • Page 7

    ... Package Dimensions FDP5N50NZF / FDPF5N50NZF Rev. A TO-220 7 www.fairchildsemi.com ...

  • Page 8

    ... Package Dimensions * Front/Back Side Isolation Voltage : 2500V FDP5N50NZF / FDPF5N50NZF Rev. A TO-220F 8 Dimensions in Millimeters www.fairchildsemi.com ...

  • Page 9

    ... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. AccuPower™ FRFET Auto-SPM™ Global Power Resource Build it Now™ Green FPS™ CorePLUS™ ...