IRF840ALPBF Vishay, IRF840ALPBF Datasheet

MOSFET N-CH 500V 8A TO-262

IRF840ALPBF

Manufacturer Part Number
IRF840ALPBF
Description
MOSFET N-CH 500V 8A TO-262
Manufacturer
Vishay
Datasheet

Specifications of IRF840ALPBF

Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
850 mOhm @ 4.8A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
8A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
38nC @ 10V
Input Capacitance (ciss) @ Vds
1018pF @ 25V
Power - Max
3.1W
Mounting Type
Through Hole
Package / Case
I²Pak, TO-262 (3 straight leads + tab)
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.85 Ohm @ 10 V
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
8 A
Power Dissipation
3100 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Continuous Drain Current Id
8A
Drain Source Voltage Vds
500V
On Resistance Rds(on)
850mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRF840ALPBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF840ALPBF
Quantity:
750
Company:
Part Number:
IRF840ALPBF
Quantity:
70 000
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Benefits
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Document Number: 91066
Absolute Maximum Ratings
Typical SMPS Topologies
l
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Applications
Notes 
I
I
I
P
P
V
dv/dt
T
T
D
D
DM
J
STG
D
D
GS
@ T
@ T
@T
@T
Switch Mode Power Supply (SMPS)
Uninterruptible Power Supply
High Speed Power Switching
Lead-Free
Low Gate Charge Qg Results in Simple
Improved Gate, Avalanche and Dynamic
Fully Characterized Capacitance and
Effective Coss Specified (See AN 1001)
Full Bridge
Two Transistor Forward
Haft Bridge
Drive Requirement
Avalanche Voltage and Current
dv/dt Ruggedness
C
C
C
A
= 25°C
= 25°C
= 100°C
= 25°C
through † are on page 10
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current †
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt Ġ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Parameter
SMPS MOSFET
GS
GS
@ 10V†
@ 10V†
V
500V
DSS
300 (1.6mm from case )
IRF840AS
HEXFET
D
-55 to + 150
2
Pak
R
Max.
125
± 30
8.0
5.1
3.1
1.0
5.0
32
DS(on)
0.85Ω
IRF840ASPbF
®
IRF840ALPbF
Power MOSFET
max
IRF840AL
TO-262
www.vishay.com
PD- 95143
04/21/04
Units
W/°C
V/ns
8.0A
°C
W
A
V
I
D
1

Related parts for IRF840ALPBF

IRF840ALPBF Summary of contents

Page 1

... Document Number: 91066 SMPS MOSFET HEXFET V DSS 500V 2 D Pak IRF840AS @ 10V† 10V† 150 300 (1.6mm from case ) PD- 95143 IRF840ASPbF IRF840ALPbF ® Power MOSFET R max I DS(on) D 0.85Ω 8.0A TO-262 IRF840AL Max. Units 8.0 5 125 W 3 ...

Page 2

... Intrinsic turn-on time is negligible (turn-on is dominated by L Conditions = 250µ 1mA† 4.8A „ 250µ 0V 125° Conditions = 4.8A D „† = 1.0V, ƒ = 1.0MHz DS = 400V, ƒ = 1.0MHz 480V …† DS Max. Units 510 mJ 8 Max. Units 1.0 °C/W 40 Conditions „ = 8.0A 8. www.vishay.com 2 ...

Page 3

... DS 0.0 -60 -40 -20 8.0 9.0 Fig 4. Normalized On-Resistance IRF840AS/LPbF VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 4.5V  20µs PULSE WIDTH ° 150 Drain-to-Source Voltage (V) DS 7.4A 8 10V 100 120 140 160 ° Junction Temperature ( C) J Vs. Temperature www.vishay.com 100 3 ...

Page 4

... Fig 8. Maximum Safe Operating Area 7 8 400V 250V 100V DS  FOR TEST CIRCUIT SEE FIGURE Total Gate Charge (nC) G Gate-to-Source Voltage OPERATION IN THIS AREA LIMITED BY R DS(on 0us  1 00us  0ms ° ° 100 1000 V , Drain-to-Source Voltage (V) DS www.vishay.com 13 40 10000 4 ...

Page 5

... Document Number: 91066 IRF840AS/LPbF 10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 10a. Switching Time Test Circuit V DS 90% 125 150 ° 10 d(on) Fig 10b. Switching Time Waveforms  Notes: 1. Duty factor Peak 0.001 0. Rectangular Pulse Duration (sec D.U. d(off thJC C 0.1 1 www.vishay.com 5 ...

Page 6

... Fig 13b. Gate Charge Test Circuit Document Number: 91066 1200 1000 800 + 600 400 200 0 25 Starting T , Junction Temperature ( C) Fig 12c. Maximum Avalanche Energy + Fig 12d. Typical Drain-to-Source Voltage  I D TOP 3.6A 5.1A BOTTOM 8. 100 125 ° J Vs. Drain Current Vs. Avalanche Current www.vishay.com 150 6 ...

Page 7

... R G • Driver same type as D.U.T. • I controlled by Duty Factor "D" SD • D.U.T. - Device Under Test P.W. Period D = Period Body Diode Forward Current di/dt Diode Recovery dv/dt Body Diode Forward Drop Ripple ≤ 5% ® Power MOSFETs IRF840AS/LPbF + =10V www.vishay.com 7 ...

Page 8

... Pak Part Marking Information (Lead-Free WIT CODE 000 "L " N ote: "P " embly line pos ition indicates "L ead-F ree" OR Document Number: 91066 ION OGO CODE INT ION 530S L OGO DAT E CODE IGNAT AD ODU CT (OP T IONAL ) L OT CODE CODE CODE www.vishay.com 8 ...

Page 9

... L OT CODE 1789 19, 1997 INE "C" Note: "P " embly line pos ition indicates "L ead-F ree" Document Number: 91066 IRF840AS/LPbF NAT IONAL OGO CODE NAT IONAL OGO DAT E CODE IGNAT AD CODE 1997 CODE DAT E CODE 1997 INE ODU CT (OP T IONAL ) www.vishay.com 9 ...

Page 10

... C eff fixed capacitance that gives the same charging time oss as C while V is rising from 0 to 80% V oss DS † Uses IRF840A data and test conditions , (BR)DSS Data and specifications subject to change without notice (. (. (. (. . 0 DSS TAC Fax: (310) 252-7903 04/04 www.vishay.com 10 ...

Page 11

... Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. ...

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