IRF640SPBF Vishay, IRF640SPBF Datasheet

MOSFET N-CH 200V 18A D2PAK

IRF640SPBF

Manufacturer Part Number
IRF640SPBF
Description
MOSFET N-CH 200V 18A D2PAK
Manufacturer
Vishay
Datasheet

Specifications of IRF640SPBF

Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
180 mOhm @ 11A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
18A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
70nC @ 10V
Input Capacitance (ciss) @ Vds
1300pF @ 25V
Power - Max
130W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.18 Ohm @ 10 V
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
18 A
Power Dissipation
3100 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
18A
Drain Source Voltage Vds
200V
On Resistance Rds(on)
180mohm
Rds(on) Test Voltage Vgs
10V
Leaded Process Compatible
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF640SPBF
Quantity:
100
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
e. Uses IRF640/SiHF640 data and test conditions.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91037
S-81241-Rev. A, 07-Jul-08
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Single Pulse Avalanche Energy
Avalanche Current
Repetiitive Avalanche Energy
Maximum Power Dissipation
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
(TO-262)
DS
DS(on)
g
gs
gd
SD
I
DD
2
(Max.) (nC)
PAK
(nC)
(nC)
(V)
≤ 18 A, dI/dt ≤ 150 A/µs, V
= 50 V, starting T
(Ω)
a
G
a, e
D
(TO-263)
J
D
= 25 °C, L = 2.7 mH, R
S
2
PAK
c, e
D
IRF640SPbF
SiHF640S-E3
IRF640S
SiHF640S
a
2
PAK (TO-263)
DD
b, e
V
GS
≤ V
= 10 V
DS
, T
G
J
Single
N-Channel MOSFET
≤ 150 °C.
200
70
13
39
G
= 25 Ω, I
C
D
S
Power MOSFET
= 25 °C, unless otherwise noted
V
0.18
GS
IRF640S, IRF640L, SiHF640S, SiHF640L
D
IRF640STRLPbF
SiHF6340STL-E3
IRF640STRL
SiHF640STL
AS
at 10 V
2
PAK (TO-263)
= 18 A (see fig. 12).
T
T
for 10 s
C
A
= 25 °C
= 25 °C
T
T
a
a
C
C
= 100 °C
= 25 °C
FEATURES
• Surface Mount
• Low-Profile Through-Hole
• Available in Tape and Reel
• Dynamic dV/dt Rating
• 150 °C Operating Temperature
• Fast Switching
• Fully Avalanche Rated
• Lead (Pb)-free Available
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combinations of fast switching,
ruggedized
cost-effectiveness.
The D
accommodating die size up to HEX-4. It provides the highest
power capability and the last lowest possible on-resistance in
any existing surface mount package. The D
for high current applications because of its low internal
connection resistance and can dissipate up to 2.0 W in a
typical surface mount application. The through-hole version
(IRF640L/SiHF640L) is available for low-profile applications.
a
a
2
PAK is a surface mount power package capable of
SYMBOL
D
IRF640STRRPbF
SiHF640STR-E3
IRF640STRR
SiHF640STR
T
2
dV/dt
J
PAK (TO-263)
V
V
E
E
I
I
P
, T
device
I
DM
AR
DS
GS
AS
AR
D
D
stg
a
a
design,
a
a
- 55 to + 150
LIMIT
300
± 20
200
580
130
1.0
3.1
5.0
18
11
72
18
13
low
d
Vishay Siliconix
I
IRF640LPbF
SiHF640L-E3
IRF640L
SiHF640L
2
PAK (TO-262)
on-resistance
2
PAK is suitable
www.vishay.com
UNIT
W/°C
V/ns
RoHS*
COMPLIANT
mJ
mJ
°C
W
V
A
A
Available
and
1

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IRF640SPBF Summary of contents

Page 1

... Configuration PAK I PAK (TO-262) (TO-263 ORDERING INFORMATION 2 Package D PAK (TO-263) IRF640SPbF Lead (Pb)-free SiHF640S-E3 IRF640S SnPb SiHF640S Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS T PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current a, e Pulsed Drain Current Linear Derating Factor b, e Single Pulse Avalanche Energy ...

Page 2

... IRF640S, IRF640L, SiHF640S, SiHF640L Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient a (PCB Mounted, Steady-State) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...

Page 3

... TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig Typical Output Characteristics, T Fig Typical Output Characteristics, T Document Number: 91037 S-81241-Rev. A, 07-Jul-08 IRF640S, IRF640L, SiHF640S, SiHF640L = 25 °C Fig Typical Transfer Characteristics J = 175 °C Fig Normalized On-Resistance vs. Temperature J Vishay Siliconix www.vishay.com 3 ...

Page 4

... IRF640S, IRF640L, SiHF640S, SiHF640L Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 91037 S-81241-Rev. A, 07-Jul-08 ...

Page 5

... Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case D.U. 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91037 S-81241-Rev. A, 07-Jul-08 IRF640S, IRF640L, SiHF640S, SiHF640L 15 V Driver + - Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit ...

Page 6

... IRF640S, IRF640L, SiHF640S, SiHF640L Vishay Siliconix Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 Current regulator Same type as D.U.T. 50 kΩ 0.2 µF 0.3 µ D.U. Current sampling resistors Fig. 13b - Gate Charge Test Circuit Document Number: 91037 S-81241-Rev ...

Page 7

... V GS Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91037. ...

Page 8

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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