IRF614 Vishay, IRF614 Datasheet

MOSFET N-CH 250V 2.7A TO-220AB

IRF614

Manufacturer Part Number
IRF614
Description
MOSFET N-CH 250V 2.7A TO-220AB
Manufacturer
Vishay
Datasheet

Specifications of IRF614

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2 Ohm @ 1.6A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
2.7A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
8.2nC @ 10V
Input Capacitance (ciss) @ Vds
140pF @ 25V
Power - Max
36W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
2 Ohms
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
2.7 A
Power Dissipation
38 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF614
PRODUCT SUMMARY
V
(V)
DS
R
(Ω)
V
= 10 V
DS(on)
GS
Q
(Max.) (nC)
g
Q
(nC)
gs
Q
(nC)
gd
Configuration
TO-220
G
S
D
G
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
a
Pulsed Drain Current
Linear Derating Factor
b
Single Pulse Avalanche Energy
a
Repetitive Avalanche Current
a
Repetitive Avalanche Energy
Maximum Power Dissipation
c
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
= 50 V, starting T
= 25 °C, L = 13 mH, R
DD
J
≤ 2.7 A, dI/dt ≤ 65 A/µs, V
≤ V
c. I
, T
SD
DD
DS
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91025
S-82997-Rev. A, 12-Jan-09
Power MOSFET
FEATURES
• Dynamic dV/dt Rating
250
• Repetitive Avalanche Rated
2.0
• Fast Switching
8.2
• Ease of Paralleling
1.8
• Simple Drive Requirements
4.5
Single
• Lead (Pb)-free Available
D
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
S
and low package cost of the TO-220 contribute to its wide
N-Channel MOSFET
acceptance throughout the industry.
TO-220
IRF614PbF
SiHF614-E3
IRF614
SiHF614
= 25 °C, unless otherwise noted
C
T
= 25 °C
C
V
at 10 V
GS
T
= 100 °C
C
T
= 25 °C
C
for 10 s
6-32 or M3 screw
= 25 Ω, I
= 2.7 A (see fig. 12).
G
AS
≤ 150 °C.
J
IRF614, SiHF614
Vishay Siliconix
device
design,
low
on-resistance
SYMBOL
LIMIT
V
250
DS
V
± 20
GS
2.7
I
D
1.7
I
8.0
DM
0.29
E
61
AS
I
2.7
AR
E
3.6
AR
P
36
D
dV/dt
4.8
T
, T
- 55 to + 150
J
stg
d
300
10
1.1
www.vishay.com
Available
RoHS*
COMPLIANT
and
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N · m
1

Related parts for IRF614

IRF614 Summary of contents

Page 1

... TO-220 IRF614PbF SiHF614-E3 IRF614 SiHF614 = 25 °C, unless otherwise noted ° 100 ° °C C for screw = 25 Ω 2.7 A (see fig. 12 ≤ 150 °C. J IRF614, SiHF614 Vishay Siliconix device design, low on-resistance SYMBOL LIMIT V 250 DS V ± 2 1.7 I 8 ...

Page 2

... IRF614, SiHF614 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance ...

Page 3

... Fig Typical Output Characteristics, T Document Number: 91025 S-82997-Rev. A, 12-Jan-09 4 µs Pulse Width ° 91025_03 = 25 ° µs Pulse Width T = 150 ° 91025_04 Fig Normalized On-Resistance vs. Temperature = 150 °C C IRF614, SiHF614 Vishay Siliconix 0 10 ° 150 C ° µs Pulse Width Gate-to-Source Voltage ( Fig ...

Page 4

... IRF614, SiHF614 Vishay Siliconix 300 MHz iss gs 250 rss oss 200 150 100 Drain-to-Source Voltage ( 91025_05 Fig Typical Capacitance vs. Drain-to-Source Voltage 2 125 Total Gate Charge (nC) 91025_06 G Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com Shorted iss C oss C rss 1 91025_07 V = 200 V DS For test circuit ...

Page 5

... Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91025 S-82997-Rev. A, 12-Jan-09 125 150 Single Pulse (Thermal Response Rectangular Pulse Duration ( IRF614, SiHF614 Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit ...

Page 6

... IRF614, SiHF614 Vishay Siliconix Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 140 120 100 100 Starting T , Junction Temperature (°C) 91025_12c J Fig. 12c - Maximum Avalanche Energy vs. Drain Current I D Top 1.2 A 1.7 A Bottom 2.7 A 125 150 Current regulator Same type as D.U.T. ...

Page 7

... SD • D.U.T. - device under test P.W. Period D = Period P.W. waveform SD Body diode forward current dI/dt waveform DS Diode recovery dV/dt Body diode forward drop Ripple ≤ for logic level devices Fig.14 - For N-Channel IRF614, SiHF614 Vishay Siliconix + + www.vishay.com 7 ...

Page 8

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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