IRF614 Vishay, IRF614 Datasheet - Page 2

MOSFET N-CH 250V 2.7A TO-220AB

IRF614

Manufacturer Part Number
IRF614
Description
MOSFET N-CH 250V 2.7A TO-220AB
Manufacturer
Vishay
Datasheet

Specifications of IRF614

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2 Ohm @ 1.6A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
2.7A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
8.2nC @ 10V
Input Capacitance (ciss) @ Vds
140pF @ 25V
Power - Max
36W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
2 Ohms
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
2.7 A
Power Dissipation
38 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF614

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IRF614, SiHF614
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
www.vishay.com
2
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
SPECIFICATIONS T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
DS
Temperature Coefficient
J
a
= 25 °C, unless otherwise noted
SYMBOL
SYMBOL
ΔV
R
V
R
R
t
t
R
I
I
C
V
DS(on)
C
C
V
GS(th)
Q
Q
d(on)
d(off)
I
GSS
DSS
Q
Q
DS
g
L
L
t
I
SM
t
thCS
thJA
thJC
oss
t
t
on
DS
SD
iss
rss
S
rr
fs
gs
gd
D
r
f
S
rr
g
/T
J
Between lead,
6 mm (0.25") from
package and center of
die contact
MOSFET symbol
showing the
integral reverse
p - n junction diode
T
V
V
V
J
R
= 25 °C, I
DS
GS
GS
T
Intrinsic turn-on time is negligible (turn-on is dominated by L
G
J
Reference to 25 °C, I
= 25 °C, I
= 200 V, V
= 24 Ω, R
= 10 V
= 10 V
V
V
V
V
V
TYP.
f = 1.0 MHz, see fig. 5
0.50
TEST CONDITIONS
DD
DS
DS
DS
GS
-
-
= 125 V, I
= 250 V, V
F
= V
= 50 V, I
= 0 V, I
V
V
= 2.7 A, dI/dt = 100 A/µs
V
GS
DS
S
D
GS
GS
GS
= 2.7 A, V
= 45 Ω, see fig. 10
= ± 20 V
I
, I
= 25 V,
D
= 0 V,
= 0 V, T
D
= 2.7 A, V
see fig. 6 and 13
D
D
D
= 250 µA
= 250 µA
GS
= 1.6 A
= 2.7 A ,
I
D
D
= 0 V
= 1.6 A
GS
= 1 mA
J
G
G
= 125 °C
DS
= 0 V
b
= 200 V
b
MAX.
D
S
D
S
b
3.5
b
62
b
-
b
MIN.
0.90
250
2.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
S-82997-Rev. A, 12-Jan-09
Document Number: 91025
TYP.
0.39
0.64
140
190
9.6
7.0
7.6
7.0
4.5
7.5
42
16
-
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
°C/W
MAX.
± 100
S
250
390
4.0
2.0
8.2
1.8
4.5
2.7
8.0
2.0
1.3
25
-
-
-
-
-
-
-
-
-
-
-
-
and L
D
UNIT
V/°C
)
nA
µA
nC
nH
µC
pF
ns
ns
Ω
V
V
S
A
V

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