IRF614 Vishay, IRF614 Datasheet - Page 4

• Manufacturer Part Number: IRF614
• Description: MOSFET N-CH 250V 2.7A TO-220AB
• Manufacturer: Vishay

Specifications of IRF614

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2 Ohm @ 1.6A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 2.7A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 8.2nC @ 10V
• Input Capacitance (ciss) @ Vds: 140pF @ 25V
• Power - Max: 36W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2 Ohms
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 2.7 A
• Power Dissipation: 38 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF614

IRF614, SiHF614
Vishay Siliconix
www.vishay.com
4
91025_05
91025_06
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
300
250
200
150
100
50
20
16
12
0
8
4
0
10
0
0
I
D
= 2.7 A
V
DS ,
Q
G
2
Drain-to-Source Voltage (V)
V
, Total Gate Charge (nC)
DS
= 50 V
V
V
C
C
C
DS
GS
iss
rss
oss
= 125 V
4
= 0 V, f = 1 MHz
= C
= C
= C
10
gs
gd
ds
V
1
DS
+ C
+ C
C
= 200 V
C
gd
C
rss
gd
oss
For test circuit
see figure 13
iss
, C
6
ds
Shorted
8
91025_07
91025_08
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 3 - Fig. 8 - Maximum Safe Operating Area
10
10
10
0.1
10
1
0
2
1
5
2
5
2
5
2
0.5
1
150
2
°
V
V
C
SD
DS
0.7
Operation in this area limited
, Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
5
10
T
T
Single Pulse
0.9
25
by R
C
J
= 150 °C
= 25 °C
2
°
C
DS(on)
S-82997-Rev. A, 12-Jan-09
5
Document Number: 91025
1.1
10
2
2
1.3
V
100
1
10
GS
ms
ms
= 0 V
5
µs
1.5
10
3