IRF614 Vishay, IRF614 Datasheet - Page 5

• Manufacturer Part Number: IRF614
• Description: MOSFET N-CH 250V 2.7A TO-220AB
• Manufacturer: Vishay

Specifications of IRF614

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2 Ohm @ 1.6A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 2.7A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 8.2nC @ 10V
• Input Capacitance (ciss) @ Vds: 140pF @ 25V
• Power - Max: 36W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2 Ohms
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 2.7 A
• Power Dissipation: 38 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF614

Document Number: 91025
S-82997-Rev. A, 12-Jan-09
Vary t
required I
91025_09
Fig. 9 - Maximum Drain Current vs. Case Temperature
p
Fig. 12a - Unclamped Inductive Test Circuit
to obtain
3.0
2.5
2.0
1.5
1.0
0.5
0.0
91025_11
AS
25
R
10 V
G
10
0.1
10
V
-2
1
DS
10
50
T
-5
0.05
0.02
0.01
t
0 − 0.5
0.2
0.1
p
C
, Case Temperature (°C)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
I
AS
75
D.U.T
0.01 Ω
L
10
100
-4
Single Pulse
(Thermal Response)
125
+
-
V
DD
10
t
150
-3
1
, Rectangular Pulse Duration (s)
A
10
-2
Fig. 12b - Unclamped Inductive Waveforms
V
I
90 %
10 %
AS
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
DS
V
V
DS
GS
0.1
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
G
10 V
V
GS
t
d(on)
V
Notes:
1. Duty Factor, D = t
2. Peak T
DS
t
r
t
IRF614, SiHF614
p
1
j
= P
P
D.U.T.
DM
DM
Vishay Siliconix
R
D
x Z
t
d(off)
V
t
1
1
thJC
DS
/t
2
t
+ T
2
t
f
V
+
-
C
10
www.vishay.com
DD
V
DD
5