FDPF15N65YDTU Fairchild Semiconductor, FDPF15N65YDTU Datasheet

FDPF15N65YDTU

Manufacturer Part Number

FDPF15N65YDTU

Description

MOSFET N-CH 650V 15A TO-220F

Manufacturer

Fairchild Semiconductor

Series

UniFET™r

Datasheet

1.FDPF15N65YDTU.pdf (10 pages)

Specifications of FDPF15N65YDTU

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

440 mOhm @ 7.5A, 10V

Drain To Source Voltage (vdss)

650V

Current - Continuous Drain (id) @ 25° C

15A

Vgs(th) (max) @ Id

5V @ 250µA

Gate Charge (qg) @ Vgs

63nC @ 10V

Input Capacitance (ciss) @ Vds

3095pF @ 25V

Power - Max

38.5W

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack (Straight Leads)

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.44 Ohms

Drain-source Breakdown Voltage

650 V

Gate-source Breakdown Voltage

+/- 30 V

Continuous Drain Current

15 A

Power Dissipation

38.5 W

Maximum Operating Temperature

+ 150 C

Mounting Style

Through Hole

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

FDPF15N65YDTU

Manufacturer:

FSC/ON

Quantity:

20 000

Current page: 1 of 10
Download datasheet (491Kb)

FDP15N65 / FDPF15N65 Rev. B

FDP15N65 / FDPF15N65

650V N-Channel MOSFET

Features

• 15A, 650V, R

• Low gate charge ( typical 48.5 nC)

• Low C

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

Absolute Maximum Ratings

* Drain current limited by maximum junction termperature.

Thermal Characteristics

dv/dt

DSS

GSS

Symbol

θJC

θCS

θJA

STG

rss

( typical 23.6 pF)

DS(on)

Drain-Source Voltage

Drain Current

Gate-Source voltage

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Power Dissipation

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

Thermal Resistance, Junction-to-Case

Thermal Resistance, Case-to-Sink

Thermal Resistance, Junction-to-Ambient

Operating and Storage Temperature Range

= 0.44Ω @V

TO-220

FDP Series

= 10 V

- Continuous (T

- Pulsed

- Derate above 25°C

Parameter

= 25°C)

= 100°C)

Description

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary, planar

stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the avalanche

and commutation mode. These devices are well suited for high

efficient switched mode power supplies and active power factor

correction.

(Note 1)

(Note 2)

(Note 1)

(Note 3)

TO-220F

FDPF Series

FDP15N65

250

9.5

2.0

62.5

0.5

-55 to +150

± 30

25.0

650

637

300

4.5

FDPF15N65

38.5

9.5*

15*

60*

0.3

62.5

3.3

UniFET

April 2007

www.fairchildsemi.com

Unit

W/°C

V/ns

Unit

°C/W

°C

Related parts for FDPF15N65YDTU

FDPF15N65YDTU Summary of contents

Page 1

... R Thermal Resistance, Case-to-Sink θCS R Thermal Resistance, Junction-to-Ambient θJA ©2007 Fairchild Semiconductor Corporation FDP15N65 / FDPF15N65 Rev. B Description = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to ...

Page 2

Package Marking and Ordering Information Device Marking Device FDP15N65 FDP15N65 FDPF15N65 FDPF15N65 Electrical Characteristics Symbol Parameter Off Characteristics BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature DSS ΔT / Coefficient J I Zero Gate Voltage Drain Current DSS I ...

Page 3

Typical Performance Characteristics Figure 1. On-Region Characteristics V GS Top : 15.0 V 10.0 V 8.0 V 7 6.0 V Bottom : 5 Drain-Source ...

Page 4

Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 1.1 1.0 0.9 0.8 -100 - Junction Temperature [ J Figure 9-1. Safe Operating Area for FDP15N65 Operation in This Area ...

Page 5

Typical Performance Characteristics Figure 11-1. Transient Thermal Response Curve for FDP15N65 Figure 11-2. Transient Thermal Response Curve for FDPF15N65 FDP15N65 ...

Page 6

Unclamped Inductive Switching Test Circuit & Waveforms FDP15N65 / FDPF15N65 Rev. B Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms 6 www.fairchildsemi.com ...

Page 7

FDP15N65 / FDPF15N65 Rev. B Peak Diode Recovery dv/dt Test Circuit & Waveforms 7 www.fairchildsemi.com ...

Page 8

Mechanical Dimensions FDP15N65 / FDPF15N65 Rev 220 8 Dimensions in Millimeters www.fairchildsemi.com ...

Page 9

Mechanical Dimensions MAX1.47 0.80 ±0.10 0.35 ±0.10 2.54TYP [2.54 ] ±0.20 FDP15N65 / FDPF15N65 Rev. B (Continued) TO-220F 10.16 ø3.18 ±0.20 ±0.10 (7.00) (1.00x45°) #1 2.54TYP [2.54 ] ±0.20 9.40 ±0.20 9 2.54 ±0.20 (0.70) +0.10 0.50 2.76 ±0.20 –0.05 ...

Page 10

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® ACEx Across the board. Around the world.™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ ...

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