MOSFET N-CH 250V 2.1A 8-SOIC

SI4434DY-T1-E3

Manufacturer Part NumberSI4434DY-T1-E3
DescriptionMOSFET N-CH 250V 2.1A 8-SOIC
ManufacturerVishay
SeriesTrenchFET®
SI4434DY-T1-E3 datasheet
 

Specifications of SI4434DY-T1-E3

Transistor PolarityN-ChannelFet TypeMOSFET N-Channel, Metal Oxide
Fet FeatureLogic Level GateRds On (max) @ Id, Vgs155 mOhm @ 3A, 10V
Drain To Source Voltage (vdss)250VCurrent - Continuous Drain (id) @ 25° C2.1A
Vgs(th) (max) @ Id4V @ 250µAGate Charge (qg) @ Vgs50nC @ 10V
Power - Max1.56WMounting TypeSurface Mount
Package / Case8-SOIC (3.9mm Width)Minimum Operating Temperature- 55 C
ConfigurationSingle Quad Drain Triple SourceResistance Drain-source Rds (on)0.155 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)14 SDrain-source Breakdown Voltage250 V
Gate-source Breakdown Voltage+/- 20 VContinuous Drain Current2.1 A
Power Dissipation1560 mWMaximum Operating Temperature+ 150 C
Mounting StyleSMD/SMTContinuous Drain Current Id3A
Drain Source Voltage Vds250VOn Resistance Rds(on)162mohm
Rds(on) Test Voltage Vgs20VThreshold Voltage Vgs Typ4V
Lead Free Status / RoHS StatusLead free / RoHS CompliantOther namesSI4434DY-T1-E3TR
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N-Channel 250-V (D-S) MOSFET
PRODUCT SUMMARY
V
(V)
Rr
(Ω)
DS
DS(on)
0.155 at V
= 10 V
GS
250
0.162 at V
= 6.0 V
GS
SO-8
S
1
8
D
2
7
S
D
3
6
S
D
G
4
5
D
T op V iew
Ordering Information: Si4434DY-T1-E3 (Lead (Pb)-free)
Si4434DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
a
Continuous Drain Current (T
= 150 °C)
J
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Avalanche Current
Single Pulse Avalanche Energy
a
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
a
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 72562
S09-0322-Rev. D, 02-Mar-09
FEATURES
• Halogen-free According to IEC 61249-2-21
I
(A)
D
Definition
3.0
• PWM-Optimized TrenchFET
2.9
• 100 % R
Tested
g
• Avalanche Tested
APPLICATIONS
• Primary Side Switch In:
- Telecom Power Supplies
- Distributed Power Architectures
- Miniature Power Modules
= 25 °C, unless otherwise noted
A
Symbol
V
DS
V
GS
T
= 25 °C
A
I
D
T
= 70 °C
A
I
DM
a
I
S
I
AS
L = 0.1 mH
E
AS
T
= 25 °C
A
P
D
T
= 70 °C
A
T
, T
J
stg
Symbol
t ≤ 10 s
R
thJA
Steady State
R
Steady State
thJF
Si4434DY
Vishay Siliconix
®
Power MOSFET
D
G
S
N-Channel MOSFET
10 s
Steady State
Unit
250
V
± 20
3.0
2.1
2.4
1.7
30
A
2.6
1.3
13
8.4
mJ
3.1
1.56
W
2.0
1.0
- 55 to 150
°C
Typical
Maximum
Unit
33
40
65
80
°C/W
17
21
www.vishay.com
1

SI4434DY-T1-E3 Summary of contents

  • Page 1

    ... iew Ordering Information: Si4434DY-T1-E3 (Lead (Pb)-free) Si4434DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) Avalanche Current Single Pulse Avalanche Energy a Maximum Power Dissipation ...

  • Page 2

    ... Si4434DY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance ...

  • Page 3

    ... V - Source-to-Drain Voltage (V) DS Source-Drain Diode Forward Voltage Document Number: 72562 S09-0322-Rev. D, 02-Mar-09 2500 2000 1500 1000 °C J 0.8 1.0 1.2 Si4434DY Vishay Siliconix C iss C oss 500 C rss 100 150 V - Drain-to-Source Voltage (V) DS Capacitance 2 3 2.0 1.5 1.0 0.5 ...

  • Page 4

    ... Si4434DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1.0 0.5 I 0.0 - 0.5 - 1 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 4 = 250 µ 100 125 150 100 Limited DS(on 0 °C C 0.01 Single Pulse ...

  • Page 5

    ... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72562. Document Number: 72562 S09-0322-Rev. D, 02-Mar- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si4434DY Vishay Siliconix 10 100 1000 www.vishay.com 5 ...

  • Page 6

    ... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...