SI4434DY-T1-E3 Vishay, SI4434DY-T1-E3 Datasheet - Page 2

• Manufacturer Part Number: SI4434DY-T1-E3
• Description: MOSFET N-CH 250V 2.1A 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4434DY-T1-E3

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 155 mOhm @ 3A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 2.1A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 50nC @ 10V
• Power - Max: 1.56W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.155 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 14 S
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 2.1 A
• Power Dissipation: 1560 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 3A
• Drain Source Voltage Vds: 250V
• On Resistance Rds(on): 162mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: 4V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI4434DY-T1-E3TR

Si4434DY
Vishay Siliconix
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
2
SPECIFICATIONS T
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
b
30
24
18
12
6
0
0
2
a
a
V
DS
Output Characteristics
a
- Drain-to-Source Voltage (V)
J
= 25 °C, unless otherwise noted
4
a
V
GS
Symbol
R
6
V
I
t
t
I
I
D(on)
DS(on)
V
GS(th)
Q
Q
d(on)
d(off)
= 10 V thru 6 V
GSS
DSS
g
Q
R
t
t
SD
t
rr
gd
fs
gs
r
f
g
g
5 V
8
V
V
I
DS
D
DS
≅ 4.0 A, V
I
= 100 V, V
= 250 V, V
F
V
V
V
10
V
V
V
= 2.8 A, dI/dt = 100 A/µs
V
V
DS
DS
I
DD
DS
DS
S
GS
GS
DS
Test Conditions
= 2.8 A, V
= 0 V, V
= V
= 250 V, V
≥ 10 V, V
= 100 V, R
= 6.0 V, I
= 10 V, I
= 15 V, I
GEN
GS
GS
GS
, I
GS
= 10 V, I
= 10 V, R
= 0 V, T
D
GS
D
D
GS
D
= 250 µA
GS
L
= ± 20 V
= 3.0 A
= 3.0 A
= 2.9 A
= 10 V
= 0 V
= 25 Ω
= 0 V
J
D
g
= 55 °C
= 3.0 A
= 6 Ω
40
35
30
25
20
15
10
5
0
0
1
Min.
2.0
0.6
20
V
GS
Transfer Characteristics
- Gate-to-Source Voltage (V)
2
0.129
0.131
Typ.
0.75
10.5
100
6.8
1.2
14
34
16
23
47
19
S09-0322-Rev. D, 02-Mar-09
T
3
25 °C
Document Number: 72562
C
= 125 °C
± 100
0.155
0.162
Max.
150
4
4.0
1.2
1.8
15
50
25
35
70
30
1
5
- 55 °C
Unit
nC
nA
µA
ns
Ω
Ω
V
A
S
V
6