IRFR9310TR Vishay, IRFR9310TR Datasheet

MOSFET P-CH 400V 1.8A DPAK

IRFR9310TR

Manufacturer Part Number
IRFR9310TR
Description
MOSFET P-CH 400V 1.8A DPAK
Manufacturer
Vishay
Datasheet

Specifications of IRFR9310TR

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
7 Ohm @ 1.1A, 10V
Drain To Source Voltage (vdss)
400V
Current - Continuous Drain (id) @ 25° C
1.8A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
13nC @ 10V
Input Capacitance (ciss) @ Vds
270pF @ 25V
Power - Max
50W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
7 Ohms
Drain-source Breakdown Voltage
- 400 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
1.8 A
Power Dissipation
50 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

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Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
c. I
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91284
S-82992-Rev. B, 12-Jan-09
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
(TO-252)
D
DS
DS(on)
g
gs
gd
SD
DPAK
(Max.) (nC)
(nC)
(nC)
(V)
≤ - 1.1 A, dI/dt ≤ 450 A/µs, V
(Ω)
G
J
S
= 25 °C, L = 57 mH, R
D
(TO-251)
IPAK
DPAK (TO-252)
IRFR9310PbF
SiHFR9310-E3
IRFR9310
SiHFR9310
a
G
D S
c
a
a
b
V
GS
DD
G
≤ V
= - 10 V
= 25 Ω, I
DS
G
, T
Single
DPAK (TO-252)
IRFR9310TRLPbF
SiHFR9310TL-E3
IRFR9310TRL
SiHFR9310TL
P-Channel MOSFET
- 400
3.2
IRFR9310, IRFU9310, SiHFR9310, SiHFU9310
5.0
J
13
AS
≤ 150 °C.
= - 1.8 A (see fig. 12).
S
D
C
Power MOSFET
V
= 25 °C, unless otherwise noted
GS
7.0
a
a
at - 10 V
a
a
T
for 10 s
C
= 25 °C
DPAK (TO-252)
IRFR9310TRPbF
SiHFR9310T-E3
IRFR9310TR
SiHFR9310T
T
T
C
C
= 100 °C
= 25 °C
FEATURES
• P-Channel
• Surface Mount (IRFR9310/SiHFR9310)
• Straight Lead (IRFU9310/SiHFU9310)
• Advanced Process Technology
• Fast Switching
• Fully Avalanche Rated
• Lead (Pb)-free Available
DESCRIPTION
Third generation Power MOSFETs from Vishay utilize
advanced
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a
wide variety of applications.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU/SiHFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
a
a
a
SYMBOL
a
T
dV/dt
processing
J
V
V
E
E
I
I
P
, T
I
DM
AR
DS
GS
AS
AR
D
D
stg
DPAK (TO-252)
IRFR9310TRRPbF
SiHFR9310TR-E3
-
-
techniques
- 55 to + 150
LIMIT
- 400
300
± 20
- 1.8
- 1.1
- 7.2
0.40
- 1.8
- 24
5.0
92
50
a
a
Vishay Siliconix
d
IPAK (TO-251)
IRFU9310PbF
SiHFU9310-E3
IRFU9310
SiHFU9310
to
www.vishay.com
achieve
UNIT
W/°C
RoHS*
V/ns
COMPLIANT
mJ
mJ
°C
W
V
A
A
Available
low
1

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IRFR9310TR Summary of contents

Page 1

... ° 100 ° °C C for 1.8 A (see fig. 12). AS ≤ 150 ° Vishay Siliconix processing techniques to achieve DPAK (TO-252) IPAK (TO-251 IRFR9310TRRPbF IRFU9310PbF a a SiHFR9310TR-E3 SiHFU9310-E3 - IRFU9310 - SiHFU9310 SYMBOL LIMIT V - 400 DS V ± 1 1 7 ...

Page 2

... IRFR9310, IRFU9310, SiHFR9310, SiHFU9310 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...

Page 3

... Document Number: 91284 S-82992-Rev. B, 12-Jan-09 IRFR9310, IRFU9310, SiHFR9310, SiHFU9310 Vishay Siliconix www.vishay.com 3 ...

Page 4

... IRFR9310, IRFU9310, SiHFR9310, SiHFU9310 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 VGS TOP -15V -10V -8.0V -7.0V -6.0V -5.5V -5.0V BOTTOM -4.5V 1 -4.5V 20μs PULSE WIDTH 0 Drain-to-Source Voltage (V) DS Fig Typical Output Characteristics 10 VGS TOP -15V -10V -8.0V -7.0V -6.0V -5 ...

Page 5

... Fig Typical Gate Charge vs. Gate-to-Source Voltage Document Number: 91284 S-82992-Rev. B, 12-Jan-09 IRFR9310, IRFU9310, SiHFR9310, SiHFU9310 C SHORTED ds 0.1 100 Fig Typical Source-Drain Diode Forward Voltage 100 10 SEE FIGURE 13 0 Vishay Siliconix 10 ° 150 ° 1.0 2.0 3.0 4.0 -V ,Source-to-Drain Voltage (V) SD OPERATION IN THIS AREA LIMITED ...

Page 6

... IRFR9310, IRFU9310, SiHFR9310, SiHFU9310 Vishay Siliconix 2.0 1.6 1.2 0.8 0.4 0 100 T , Case Temperature ( C) C Fig Maximum Drain Current vs. Case Temperature 0.50 1 0.20 0.10 0.05 0.02 SINGLE PULSE 0.1 0.01 (THERMAL RESPONSE) 0.01 0.00001 0.0001 Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case www ...

Page 7

... V 300 TOP 250 BOTTOM 200 150 100 100 Starting T , Junction Temperature ( C) J Fig. 12c - Maximum Avalanche Energy vs. Drain Current Vishay Siliconix Fig. 12b - Unclamped Inductive Waveforms I D -0.49A -0.7A -1.1A 125 150 ° Current regulator Same type as D.U.T. 50 kΩ ...

Page 8

... Inductor current * V Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91284. ...

Page 9

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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