MOSFET N-CH 500V 3.9A TO-220F

FDPF5N50NZU

Manufacturer Part NumberFDPF5N50NZU
DescriptionMOSFET N-CH 500V 3.9A TO-220F
ManufacturerFairchild Semiconductor
SeriesUniFET-II™
FDPF5N50NZU datasheet
 


Specifications of FDPF5N50NZU

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs2 Ohm @ 1.95A, 10VDrain To Source Voltage (vdss)500V
Current - Continuous Drain (id) @ 25° C3.9AVgs(th) (max) @ Id5V @ 250µA
Gate Charge (qg) @ Vgs12nC @ 10VInput Capacitance (ciss) @ Vds485pF @ 25V
Power - Max30WMounting TypeThrough Hole
Package / CaseTO-220-3 Full PackTransistor PolarityN-Channel
Resistance Drain-source Rds (on)1.7 OhmsForward Transconductance Gfs (max / Min)4.2 S
Drain-source Breakdown Voltage500 VContinuous Drain Current2.3 A to 3.9 A
Power Dissipation30 WMaximum Operating Temperature+ 150 C
Mounting StyleThrough HoleGate Charge Qg9 nC
Minimum Operating Temperature- 55 CLead Free Status / RoHS StatusLead free / RoHS Compliant
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Package Marking and Ordering Information
Device Marking
Device
FDP5N50NZU
FDP5N50NZU
FDPF5N50NZU
FDPF5N50NZU
Electrical Characteristics
Symbol
Parameter
Off Characteristics
BV
Drain to Source Breakdown Voltage
DSS
BV
Breakdown Voltage Temperature
DSS
T
Coefficient
J
I
Zero Gate Voltage Drain Current
DSS
I
Gate to Body Leakage Current
GSS
On Characteristics
V
Gate Threshold Voltage
GS(th)
R
Static Drain to Source On Resistance
DS(on)
g
Forward Transconductance
FS
Dynamic Characteristics
C
Input Capacitance
iss
C
Output Capacitance
oss
C
Reverse Transfer Capacitance
rss
Q
Total Gate Charge at 10V
g(tot)
Q
Gate to Source Gate Charge
gs
Q
Gate to Drain “Miller” Charge
gd
Switching Characteristics
t
Turn-On Delay Time
d(on)
t
Turn-On Rise Time
r
t
Turn-Off Delay Time
d(off)
t
Turn-Off Fall Time
f
Drain-Source Diode Characteristics
I
Maximum Continuous Drain to Source Diode Forward Current
S
I
Maximum Pulsed Drain to Source Diode Forward Current
SM
V
Drain to Source Diode Forward Voltage
SD
t
Reverse Recovery Time
rr
Q
Reverse Recovery Charge
rr
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 18mH, I
= 3.9A, V
= 50V, R
= 25, Starting T
AS
DD
G
3.9A, di/dt  200A/s, V
 BV
3. I
, Starting T
SD
DD
DSS
4. Essentially Independent of Operating Temperature Typical Characteristics
FDP5N50NZU / FDPF5N50NZU Rev. A
Package
Reel Size
TO-220
-
TO-220F
-
o
T
= 25
C unless otherwise noted
C
Test Conditions
I
= 250A, V
= 0V, T
D
GS
I
= 250A, Referenced to 25
D
V
= 500V, V
= 0V
DS
GS
V
= 400V, V
= 0V,T
DS
GS
V
= ±25V, V
= 0V
GS
DS
V
= V
, I
= 250A
GS
DS
D
V
= 10V, I
= 1.95A
GS
D
V
= 20V, I
= 1.95A
DS
D
V
= 25V, V
= 0V
DS
GS
f = 1MHz
V
= 400V I
= 3.9A
DS
D
V
= 10V
GS
V
= 250V, I
= 3.9A
DD
D
V
= 10V, R
= 25
GS
GEN
V
= 0V, I
= 3.9A
GS
SD
V
= 0V, I
= 3.9A
GS
SD
dI
/dt = 100A/s
F
= 25C
J
= 25C
J
2
Tape Width
Quantity
-
50
-
50
Min.
Typ.
Max.
o
= 25
C
500
-
-
C
o
C
-
0.5
-
-
-
25
o
= 125
C
-
-
250
C
-
-
±10
3.0
-
5.0
-
1.7
2.0
-
4.2
-
(Note 4)
-
365
485
-
50
65
-
4
8
-
9
12
-
2
-
-
4
-
(Note 4)
-
12
35
-
19
50
-
31
70
-
22
55
(Note 4)
-
-
3.9
-
-
15
-
-
1.6
-
45
-
-
33
-
(Note 4)
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Units
V
o
V/
C
A
A
V
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
A
A
V
ns
nC