IRF740ASTRRPBF Vishay, IRF740ASTRRPBF Datasheet

MOSFET N-CH 400V 10A D2PAK

IRF740ASTRRPBF

Manufacturer Part Number
IRF740ASTRRPBF
Description
MOSFET N-CH 400V 10A D2PAK
Manufacturer
Vishay
Datasheet

Specifications of IRF740ASTRRPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
550 mOhm @ 6A, 10V
Drain To Source Voltage (vdss)
400V
Current - Continuous Drain (id) @ 25° C
10A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
36nC @ 10V
Input Capacitance (ciss) @ Vds
1030pF @ 25V
Power - Max
3.1W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Transistor Polarity
N Channel
Continuous Drain Current Id
10A
Drain Source Voltage Vds
400V
On Resistance Rds(on)
550mohm
Rds(on) Test Voltage Vgs
10V
Leaded Process Compatible
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
c. I
d. 1.6 mm from case.
e. Uses IRF740A, SiHF740A data and test conditions.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91052
S-83029-Rev. A, 19-Jan-09
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Single Pulse Avalanche Energy
Avalanche Current
Repetiitive Avalanche Energy
Maximum Power Dissipation
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
I
2
DS
DS(on)
g
gs
gd
PAK
SD
(Max.) (nC)
(nC)
(nC)
(V)
≤ 10 A, dI/dt ≤ 330 A/µs, V
(TO-262)
(Ω)
J
= 25 °C, L = 12.6 mH, R
G
D
S
a
a, e
G
D
IRF740ASPbF
SiHF740AS-E3
IRF740AS
SiHF740AS
D
2
D
2
PAK (TO-263)
PAK (TO-263)
e
S
c, e
a
DD
b, e
V
GS
≤ V
G
= 10 V
DS
= 25 Ω, I
, T
J
G
IRF740AS, IRF740AL, SiHF740AS, SiHF740AL
Single
≤ 150 °C.
400
9.9
36
16
N-Channel MOSFET
AS
= 10 A (see fig. 12).
C
D
IRF740ASTRLPbF
SiHF740ASTL-E3
IRF740ASTRL
SiHF740ASTL
Power MOSFET
= 25 °C, unless otherwise noted
V
2
0.55
D
S
PAK (TO-263)
GS
at 10 V
T
T
for 10 s
A
C
= 25 °C
= 25 °C
a
a
T
T
a
C
C
a
= 100 °C
= 25 °C
FEATURES
• Low Gate Charge Q
• Improved Gate, Avalanche and Dynamic dV/dt
• Fully
• Effective C
• Lead (Pb)-free Available
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High speed Power Switching
TYPICAL SMPS TOPOLOGIES
• Single Transistor Flyback Xfmr. Reset
• Single Transistor Forward Xfmr. Reset (Both for US Line
Requirement
Ruggedness
Avalanche Voltage and Current
Input Only)
D
IRF740ASTRRPbF
SiHF740ASTR-E3
IRF740ASTRR
SiHF740ASTR
2
Characterized
PAK (TO-263)
SYMBOL
T
dV/dt
oss
J
V
V
E
E
I
I
P
, T
I
DM
AR
DS
GS
AS
AR
D
D
stg
specified
a
a
g
Results in Simple Drive
a
a
Capacitance
- 55 to + 150
LIMIT
300
± 30
12.5
400
630
125
6.3
1.0
3.1
5.9
10
40
10
I
IRF740ALPbF
SiHF740AL-E3
IRF740AL
SiHF740AL
d
Vishay Siliconix
2
PAK (TO-262)
and
www.vishay.com
UNIT
W/°C
V/ns
RoHS*
COMPLIANT
mJ
mJ
°C
W
V
A
A
Available
1

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IRF740ASTRRPBF Summary of contents

Page 1

... 100 ° ° °C C for (see fig. 12). AS ≤ 150 ° Vishay Siliconix Results in Simple Drive g Characterized Capacitance and specified oss PAK (TO-263) I PAK (TO-262) a IRF740ASTRRPbF IRF740ALPbF a SiHF740ASTR-E3 SiHF740AL-E3 a IRF740ASTRR IRF740AL a SiHF740ASTR SiHF740AL SYMBOL LIMIT V 400 DS V ± 6 1.0 E 630 12 ...

Page 2

... IRF740AS, IRF740AL, SiHF740AS, SiHF740AL Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient (PCB a Mounted, steady-state) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...

Page 3

... IRF740AS, IRF740AL, SiHF740AS, SiHF740AL 10 4 µs Pulse Width ° 91052_03 3.0 2.5 2.0 1.5 4.5 V 1.0 0.5 20 µs Pulse Width T = 150 ° 91052_04 Vishay Siliconix 2 10 ° 150 ° µs Pulse Width 0.1 4.0 5.0 6.0 7.0 8.0 9.0 V Gate-to-Source Voltage ( Fig ...

Page 4

... IRF740AS, IRF740AL, SiHF740AS, SiHF740AL Vishay Siliconix MHz iss rss oss Drain-to-Source Voltage ( 91052_05 Fig Typical Capacitance vs. Drain-to-Source Voltage 200 Total Gate Charge (nC) 91052_06 G Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com Shorted iss C oss C rss 91052_07 Fig Typical Source-Drain Diode Forward Voltage ...

Page 5

... V 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91052 S-83029-Rev. A, 19-Jan-09 IRF740AS, IRF740AL, SiHF740AS, SiHF740AL 125 150 - Rectangular Pulse Duration ( Driver + - Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit ...

Page 6

... IRF740AS, IRF740AL, SiHF740AS, SiHF740AL Vishay Siliconix 1400 1200 1000 800 600 400 200 100 Starting T , Junction Temperature (°C) 91052_12c J Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 580 I D Top 4.5 A 6.3 A 560 Bottom ...

Page 7

... V GS Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91052. Document Number: 91052 S-83029-Rev ...

Page 8

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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