IRF740STRLPBF Vishay, IRF740STRLPBF Datasheet
IRF740STRLPBF
Specifications of IRF740STRLPBF
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IRF740STRLPBF Summary of contents
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... The PAK (TO-263) is suitable for high current applications N-Channel MOSFET because of its low internal connection resistance and can dissipate typical surface mount application PAK (TO-263) IRF740STRLPbF a SiHF740STL-E3 a IRF740STRL a SiHF740STL = 25 °C, unless otherwise noted °C ...
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... IRF740S, SiHF740S Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...
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... Fig Typical Output Characteristics, T Document Number: 91055 S-83029-Rev. A, 19-Jan-09 4 µs Pulse Width ° 91055_03 = 25 ° µs Pulse Width T = 150 ° 91055_04 = 150 °C C IRF740S, SiHF740S Vishay Siliconix ° 150 ° µs Pulse Width Gate-to-Source Voltage ( Fig Typical Transfer Characteristics 3 ...
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... IRF740S, SiHF740S Vishay Siliconix 2500 MHz iss 2000 rss oss ds 1500 C 1000 C 500 Drain-to-Source Voltage ( 91055_05 Fig Typical Capacitance vs. Drain-to-Source Voltage 320 200 Total Gate Charge (nC) 91055_06 G Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com Shorted iss oss rss 91055_07 Fig Typical Source-Drain Diode Forward Voltage ...
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... Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91055 S-83029-Rev. A, 19-Jan-09 125 150 Single Pulse (Thermal Response Rectangular Pulse Duration (S) 1 IRF740S, SiHF740S Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit ...
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... IRF740S, SiHF740S Vishay Siliconix Vary t to obtain p required I AS D.U 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit 91055_12c Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com Fig. 12b - Unclamped Inductive Waveforms 1200 Top ...
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... V for logic level devices GS Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91055. ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...