IRFL014TR Vishay, IRFL014TR Datasheet

MOSFET N-CH 60V 2.7A SOT223

IRFL014TR

Manufacturer Part Number
IRFL014TR
Description
MOSFET N-CH 60V 2.7A SOT223
Manufacturer
Vishay
Datasheet

Specifications of IRFL014TR

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
200 mOhm @ 1.6A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
2.7A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
11nC @ 10V
Input Capacitance (ciss) @ Vds
300pF @ 25V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Transistor Polarity
N Channel
Continuous Drain Current Id
2.7A
Drain Source Voltage Vds
60V
On Resistance Rds(on)
500mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Configuration
Single Dual Drain
Resistance Drain-source Rds (on)
0.2 Ohms
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
2.7 A
Power Dissipation
2 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant, Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFL014TRPBF
Manufacturer:
IR
Quantity:
20 000
Company:
Part Number:
IRFL014TRPBF
Quantity:
70 000
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91191
S10-1257-Rev. C, 31-May-10
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Linear Derating Factor (PCB Mount)
Single Pulse Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
DS
DS(on)
g
gs
gd
SD
DD
(Max.) (nC)
(nC)
(V)
(nC)
≤ 10 A, dI/dt ≤ 90 A/μs, V
= 25 V, starting T
(Ω)
D
SOT-223
G
a
D
J
= 25 °C, L = 16 mH, R
S
c
DD
b
V
≤ V
GS
e
DS
= 10 V
G
, T
J
N-Channel MOSFET
e
≤ 150 °C.
Single
3.1
5.8
60
11
g
SOT-223
SiHFL014-GE3
IRFL014PbF
SiHFL014-E3
IRFL014
SiHFL014
= 25 Ω, I
C
D
S
= 25 °C, unless otherwise noted)
Power MOSFET
V
0.20
GS
AS
at 10 V
= 2.7 A (see fig. 12).
T
T
C
A
for 10 s
= 25 °C
= 25 °C
T
T
C
C
= 100 °C
= 25 °C
FEATURES
• Halogen-free According to IEC 61249-2-21
• Surface Mount
• Available in Tape and Reel
• Dynamic dV/dt Rating
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The SOT-223 package is designed for surface-mounting
using vapor phase, infrared, or wave soldering techniques.
Its unique package design allows for easy automatic
pick-and-place as with other SOT or SOIC packages but
has the added advantage of improved thermal performace
due to an enlarged tab for heatsinking. Power dissipation of
greater than 1.25 W is possible in a typical surface mount
application.
Definition
SYMBOL
T
dV/dt
J
V
V
E
I
, T
P
device
DM
I
GS
DS
AS
D
D
stg
SOT-223
SiHFL014TR-GE3
IRFL014TRPbF
SiHFL014T-E3
IRFL014TR
SiHFL014T
design,
IRFL014, SiHFL014
- 55 to + 150
a
a
LIMIT
0.025
0.017
300
± 20
a
100
2.7
1.7
3.1
2.0
4.5
a
60
22
low
a
Vishay Siliconix
d
on-resistance
www.vishay.com
UNIT
W/°C
V/ns
mJ
°C
W
V
A
and
1

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IRFL014TR Summary of contents

Page 1

... 100 ° ° °C A for Ω 2.7 A (see fig. 12 ≤ 150 °C. J IRFL014, SiHFL014 Vishay Siliconix device design, low on-resistance SOT-223 a SiHFL014TR-GE3 a IRFL014TRPbF a SiHFL014T-E3 a IRFL014TR a SiHFL014T SYMBOL LIMIT ± 2 1 0.025 0.017 E 100 AS 3 2.0 dV/dt 4 150 J stg d 300 www ...

Page 2

... IRFL014, SiHFL014 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage ...

Page 3

... TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Fig Typical Output Characteristics, T Fig Typical Output Characteristics, T Document Number: 91191 S10-1257-Rev. C, 31-May- °C Fig Typical Transfer Characteristics C = 150 °C Fig Normalized On-Resistance vs. Temperature C IRFL014, SiHFL014 Vishay Siliconix www.vishay.com 3 ...

Page 4

... IRFL014, SiHFL014 Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 91191 S10-1257-Rev. C, 31-May-10 ...

Page 5

... Fig Maximum Drain Current vs. Case Temperature Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91191 S10-1257-Rev. C, 31-May-10 IRFL014, SiHFL014 Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit d(on) r d(off) f Fig. 10b - Switching Time Waveforms www ...

Page 6

... IRFL014, SiHFL014 Vishay Siliconix Vary t to obtain p required I AS D.U. 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com Fig. 12c - Maximum Avalanche Energy vs. Drain Current Fig. 12b - Unclamped Inductive Waveforms Current regulator Same type as D.U.T. ...

Page 7

... Note Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91191. Document Number: 91191 S10-1257-Rev ...

Page 8

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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