MOSFET N-CH 500V 4.5A TO220F

FDPF5N50NZ

Manufacturer Part NumberFDPF5N50NZ
DescriptionMOSFET N-CH 500V 4.5A TO220F
ManufacturerFairchild Semiconductor
SeriesUniFET-II™
FDPF5N50NZ datasheet
 

Specifications of FDPF5N50NZ

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs1.5 Ohm @ 2.25A, 10VDrain To Source Voltage (vdss)500V
Current - Continuous Drain (id) @ 25° C4.5AVgs(th) (max) @ Id5V @ 250µA
Gate Charge (qg) @ Vgs12nC @ 10VInput Capacitance (ciss) @ Vds440pF @ 25V
Power - Max30WMounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)Transistor PolarityN-Channel
Resistance Drain-source Rds (on)1.38 OhmsForward Transconductance Gfs (max / Min)3.54 S
Drain-source Breakdown Voltage500 VGate-source Breakdown Voltage25 V
Continuous Drain Current4.5 APower Dissipation30 W
Maximum Operating Temperature+ 125 CMounting StyleThrough Hole
Gate Charge Qg9 nCMinimum Operating Temperature- 55 C
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
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FDP5N50NZ / FDPF5N50NZ
N-Channel MOSFET
500V, 4.5A, 1.5
Features
• R
= 1.38 (Typ.)@ V
= 10V, I
DS(on)
GS
• Low Gate Charge (Typ. 9nC)
• Low C
(Typ. 4pF)
rss
• Fast Switching
• 100% Avalanche Tested
• Improved dv/dt Capability
• ESD Imoroved Capability
• RoHS Compliant
TO-220
FDP Series
MOSFET Maximum Ratings
Symbol
V
Drain to Source Voltage
DSS
V
Gate to Source Voltage
GSS
I
Drain Current
D
I
Drain Current
DM
E
Single Pulsed Avalanche Energy
AS
I
Avalanche Current
AR
E
Repetitive Avalanche Energy
AR
dv/dt
Peak Diode Recovery dv/dt
P
Power Dissipation
D
T
, T
Operating and Storage Temperature Range
J
STG
Maximum Lead Temperature for Soldering Purpose,
T
L
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
R
Thermal Resistance, Junction to Case
JC
R
Thermal Resistance, Case to Sink Typ.
CS
R
Thermal Resistance, Junction to Ambient
JA
©2010 Fairchild Semiconductor Corporation
FDP5N50NZ / FDPF5N50NZ Rev. A
Description
= 2.25A
These N-Channel enhancement mode power field effect transis
D
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advance technology has been especially tailored to mini
mize on-state resistance, provide superior switching perfor
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi
cient switching mode power supplies and active power factor
correction.
TO-220F
G
D
S
FDPF Series
(potted)
o
T
= 25
C unless otherwise noted*
C
Parameter
o
-Continuous (T
= 25
C)
C
o
-Continuous (T
= 100
C)
C
- Pulsed
o
(T
= 25
C)
C
o
- Derate above 25
C
Parameter
1
March 2010
UniFET-II
D
D
G
G
S
S
FDP5N50NZ
FDPF5N50NZ
500
±25
4.5
4.5*
2.7
2.7*
(Note 1)
18
18*
(Note 2)
160
(Note 1)
4.5
(Note 1)
7.8
(Note 3)
10
78
30
0.62
0.24
-55 to +150
300
FDP5N50NZ
FDPF5N50NZ
1.6
4.1
-
-
62.5
62.5
www.fairchildsemi.com
TM
tm
Units
V
V
A
A
mJ
A
mJ
V/ns
W
o
W/
C
o
C
o
C
Units
o
C/W

FDPF5N50NZ Summary of contents

  • Page 1

    ... R Thermal Resistance, Case to Sink Typ. CS R Thermal Resistance, Junction to Ambient JA ©2010 Fairchild Semiconductor Corporation FDP5N50NZ / FDPF5N50NZ Rev. A Description = 2.25A These N-Channel enhancement mode power field effect transis D tors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to mini ...

  • Page 2

    ... Starting 2.8A, di/dt  200A/s, V  Starting DSS 4. Pulse Test: Pulse Width  300 s, Duty cycle  2.0% 5. Essentially Independent of Operating Temperature Typical Characteristics FDP5N50NZ / FDPF5N50NZ Rev. A Package Reel Size TO-220 - TO-220F - unless otherwise noted C Test Conditions I = 250 ...

  • Page 3

    ... Drain Current [A] D Figure 5. Capacitance Characteristics 600 C iss = oss = oss 500 C rss = iss 400 300 200 C rss 100 0 0 Drain-Source Voltage [V] DS FDP5N50NZ / FDPF5N50NZ Rev. A Figure 2. Transfer Characteristics *Notes:  1. 250 s Pulse Test Figure 4. Body Diode Forward Voltage V = 10V 20V GS o *Notes ...

  • Page 4

    ... Operation in This Area is Limited by R DS(on) 0.1 *Notes Single Pulse 0. Drain-Source Voltage [V] DS Figure 11. Maximum Drain Current Case Temperature [ C FDP5N50NZ / FDPF5N50NZ Rev. A (Continued) Figure 8. On-Resistance Variation *Notes  250 100 150 Figure 10. Maximum Safe Operating Area  100 s 1ms 10ms 150 ...

  • Page 5

    ... Typical Performance Characteristics Figure 12. Transient Thermal Response Curve-FDP5N50NZ 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 Single pulse 0. Figure 13. Transient Thermal Response Curve-FDPF5N50NZ 5 0.5 1 0.2 0.1 0.05 0.02 0.1 0.01 Single pulse 0. FDP5N50NZ / FDPF5N50NZ Rev. A (Continued Rectangular Pulse Duration [sec Rectangular Pulse Duration [sec] ...

  • Page 6

    ... FDP5N50NZ / FDPF5N50NZ Rev. A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 6 www.fairchildsemi.com ...

  • Page 7

    ... FDP5N50NZ / FDPF5N50NZ Rev. A Peak Diode Recovery dv/dt Test Circuit & Waveforms + + • • • I • www.fairchildsemi.com ...

  • Page 8

    ... Package Dimensions FDP5N50NZ / FDPF5N50NZT Rev. A TO-220 8 www.fairchildsemi.com ...

  • Page 9

    ... Package Dimensions * Front/Back Side Isolation Voltage : AC2500V FDP5N50NZ / FDPF5N50NZ Rev. A TO-220F 9 Dimensions in Millimeters www.fairchildsemi.com ...

  • Page 10

    ... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDP5N50NZ / FDPF5N50NZ Rev. A FPS™ PowerTrench F-PFS™ PowerXS™ ® FRFET Programmable Active Droop™ SM ® Global Power Resource QFET Green FPS™ ...