FDPF5N50NZ Fairchild Semiconductor, FDPF5N50NZ Datasheet - Page 5

• Manufacturer Part Number: FDPF5N50NZ
• Description: MOSFET N-CH 500V 4.5A TO220F
• Manufacturer: Fairchild Semiconductor
• Series: UniFET-II™r

Specifications of FDPF5N50NZ

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.5 Ohm @ 2.25A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 4.5A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Input Capacitance (ciss) @ Vds: 440pF @ 25V
• Power - Max: 30W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.38 Ohms
• Forward Transconductance Gfs (max / Min): 3.54 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: 25 V
• Continuous Drain Current: 4.5 A
• Power Dissipation: 30 W
• Maximum Operating Temperature: + 125 C
• Mounting Style: Through Hole
• Gate Charge Qg: 9 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDP5N50NZ / FDPF5N50NZ Rev. A
Typical Performance Characteristics
0.01
0.01
0.1
0.1
Figure 12. Transient Thermal Response Curve-FDP5N50NZ
1
Figure 13. Transient Thermal Response Curve-FDPF5N50NZ
5
1
10
10
-5
-5
Single pulse
Single pulse
0.5
0.02
0.5
0.02
0.1
0.05
0.01
0.1
0.05
0.01
0.2
0.2
10
10
-4
-4
10
10
-3
Rectangular Pulse Duration [sec]
-3
Rectangular Pulse Duration [sec]
(Continued)
10
10
-2
-2
5
10
10
-1
-1
*Notes:
*Notes:
P
1. Z
2. Duty Factor, D= t
3. T
P
1. Z
2. Duty Factor, D= t
3. T
DM
10
DM
10

JM

JM
0
0
JC
JC
(t) = 1.6
- T
(t) = 4.1
- T
C
C
t
t
= P
= P
1
1
t
t
2
2
o
o
DM
DM
10
10
C/W Max.
C/W Max.
1
1
* Z
* Z
1
1


/t
/t
JC
JC
2
2
(t)
(t)
10
10
2
2
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