IRFD9024 Vishay, IRFD9024 Datasheet

MOSFET P-CH 60V 1.6A 4-DIP

IRFD9024

Manufacturer Part Number
IRFD9024
Description
MOSFET P-CH 60V 1.6A 4-DIP
Manufacturer
Vishay
Datasheet

Specifications of IRFD9024

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
280 mOhm @ 960mA, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
1.6A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
19nC @ 10V
Input Capacitance (ciss) @ Vds
570pF @ 25V
Power - Max
1.3W
Mounting Type
Through Hole
Package / Case
4-DIP (0.300", 7.62mm)
Transistor Polarity
P Channel
Continuous Drain Current Id
-1.6A
Drain Source Voltage Vds
-60V
On Resistance Rds(on)
280mohm
Rds(on) Test Voltage Vgs
-10V
Threshold Voltage Vgs Typ
-4V
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRFD9024

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFD9024
Manufacturer:
IR
Quantity:
450
Part Number:
IRFD9024
Manufacturer:
PHILIPS
Quantity:
18
Part Number:
IRFD9024PBF
Manufacturer:
Vishay/Siliconix
Quantity:
46 916
Part Number:
IRFD9024PBF
Manufacturer:
SIL
Quantity:
6 687
Company:
Part Number:
IRFD9024PBF
Quantity:
4 100
Company:
Part Number:
IRFD9024PBF
Quantity:
70 000
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91137
S10-2463-Rev. C, 08-Nov-10
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
DS
DS(on)
g
gs
gd
SD
DD
(Max.) (nC)
(nC)
(V)
(nC)
 - 11 A, dI/dt  140 A/μs, V
= - 25 V, starting T
()
D
HVMDIP
a
a
S
G
J
= 25 °C, L = 15 mH, R
c
a
b
V
DD
GS
 V
= - 10 V
G
DS
, T
P-Channel MOSFET
Single
J
- 60
5.4
19
11
 175 °C.
g
A
= 25 , I
S
D
= 25 °C, unless otherwise noted)
Power MOSFET
V
0.28
GS
at - 10 V
AS
= - 3.2 A (see fig. 12).
T
for 10 s
A
= 25 °C
T
T
A
A
HVMDIP
IRFD9024PbF
SiHFD9024-E3
IRFD9024
SiHFD9024
= 100 °C
= 25 °C
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• For Automatic Insertion
• End Stackable
• P-Channel
• Fast Switching
• 175 °C Operating Temperature
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The 4 pin DIP package is a low cost machine-insertable
case style which can be stacked in multiple combinations on
standard 0.1" pin centers. The dual drain servers as a
thermal link to the mounting surface for power dissipation
levels up to 1 W.
SYMBOL
T
dV/dt
J
V
V
E
E
I
I
, T
P
device
DM
I
AR
GS
DS
AS
AR
D
D
stg
IRFD9024, SiHFD9024
design,
- 55 to + 175
0.0083
LIMIT
300
± 20
- 1.6
- 1.1
- 1.6
0.13
- 4.5
- 60
- 13
140
1.3
low
Vishay Siliconix
d
on-resistance
www.vishay.com
UNIT
W/°C
RoHS*
V/ns
COMPLIANT
mJ
mJ
°C
W
V
A
A
Available
and
1

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IRFD9024 Summary of contents

Page 1

... W. HVMDIP IRFD9024PbF SiHFD9024-E3 IRFD9024 SiHFD9024 = 25 °C, unless otherwise noted ° 100 ° °C A for  3.2 A (see fig. 12  175 ° IRFD9024, SiHFD9024 Vishay Siliconix device design, low on-resistance SYMBOL LIMIT ± 1 1 0.0083 E 140 1 ...

Page 2

... IRFD9024, SiHFD9024 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic Input Capacitance Output Capacitance ...

Page 3

... TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted Fig Typical Output Characteristics Fig Typical Output Characteristics, T Document Number: 91137 S10-2463-Rev. C, 08-Nov- ° ° 175 °C = 175 °C A IRFD9024, SiHFD9024 Vishay Siliconix Fig Typical Transfer Characteristics Fig Normalized On-Resistance vs. Temperature www.vishay.com 3 ...

Page 4

... IRFD9024, SiHFD9024 Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage ° 150 °C J SINGLE PULSE Fig Maximum Safe Operating Area Document Number: 91137 S10-2463-Rev. C, 08-Nov-10 ...

Page 5

... T , Ambient Temperature (°C) A Fig Maximum Drain Current vs. Ambient Temperature Fig Maximum Effective Transient Thermal Impedance, Junction-to-Ambient Document Number: 91137 S10-2463-Rev. C, 08-Nov-10 IRFD9024, SiHFD9024 Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit Fig. 10b - Switching Time Waveforms ...

Page 6

... IRFD9024, SiHFD9024 Vishay Siliconix Vary t to obtain p required I AS D.U 0. Fig. 12a - Unclamped Inductive Test Circuit Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com Fig. 12c - Maximum Avalanche Energy vs. Drain Current Fig. 12b - Unclamped Inductive Waveforms Current regulator Same type as D.U.T. ...

Page 7

... SD • D.U.T. - device under test P.W. Period D = Period P.W. waveform SD Body diode forward current dI/dt waveform DS Diode recovery dV/dt Body diode forward drop Ripple ≤ for logic level and - 3 V drive devices Fig For P-Channel IRFD9024, SiHFD9024 Vishay Siliconix + + www.vishay.com 7 ...

Page 8

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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