IRFU9210 Vishay, IRFU9210 Datasheet

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IRFU9210

Manufacturer Part Number
IRFU9210
Description
MOSFET P-CH 200V 1.9A I-PAK
Manufacturer
Vishay
Datasheet

Specifications of IRFU9210

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
3 Ohm @ 1.1A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
1.9A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
8.9nC @ 10V
Input Capacitance (ciss) @ Vds
170pF @ 25V
Power - Max
2.5W
Mounting Type
Through Hole
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
3 Ohms
Drain-source Breakdown Voltage
- 200 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
1.9 A
Power Dissipation
2.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRFU9210

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFU9210
Manufacturer:
IR
Quantity:
46 988
Part Number:
IRFU9210PBF
Manufacturer:
SIL
Quantity:
5 994
Company:
Part Number:
IRFU9210PBF
Quantity:
70 000
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91281
S09-0060-Rev. A, 02-Feb-09
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Linear Derating Factor (PCB Mount)
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
(TO-252)
D
DS
DS(on)
g
gs
gd
DPAK
SD
DD
(Max.) (nC)
(nC)
(nC)
(V)
≤ - 1.9 A, dI/dt ≤ 70 A/µs, V
= - 50 V, starting T
(Ω)
G
S
D
(TO-251)
IPAK
a
J
G
= 25 °C, L = 124 mH, R
c
D S
DPAK (TO-252)
IRFR9210PbF
SiHFR9210-E3
IRFR9210
SiHFR9210
a
a
V
b
DD
GS
≤ V
= - 10 V
e
DS
G
, T
P-Channel MOSFET
e
Single
J
- 200
IRFR9210, IRFU9210, SiHFR9210, SiHFU9210
≤ 150 °C.
8.9
2.1
3.9
G
S
D
= 25 Ω, I
C
Power MOSFET
V
= 25 °C, unless otherwise noted
GS
3.0
DPAK (TO-252)
IRFR9210TRPbF
SiHFR9210T-E3
IRFR9210TR
SiHFR9210T
at - 10 V
AS
T
T
= - 1.9 A (see fig. 12).
for 10 s
C
A
= 25 °C
= 25 °C
T
T
a
a
C
C
= 100 °C
= 25 °C
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Surface Mount (IRFR9210, SiHFR9210)
• Straight Lead (IRFU9210, SiHFU9210)
• Available in Tape and Reel
• P-Channel
• Fast Switching
• Lead (Pb)-free Available
DESCRIPTION
The Power MOSFETs technology is the key to Vishay’s
advanced line of Power MOSFET transistors. The efficient
geometry and unique processing of the Power MOSFET
design achieve very low on-state resistance combined with
high transconductance and extreme device ruggedness.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU, SiHFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
a
a
SYMBOL
DPAK (TO-252)
-
-
IRFR9210TRL
SiHFR9210TL
T
dV/dt
J
V
V
E
E
I
I
P
, T
I
DM
AR
DS
GS
AS
AR
D
D
stg
a
a
- 55 to + 150
LIMIT
0.020
- 200
260
± 20
- 1.9
- 1.2
- 7.6
0.20
- 1.9
- 5.0
300
2.5
2.5
25
Vishay Siliconix
d
IPAK (TO-251)
IRFU9210PbF
SiHFU9210-E3
IRFU9210
SiHFU9210
www.vishay.com
UNIT
W/°C
V/ns
RoHS*
COMPLIANT
mJ
mJ
°C
W
V
A
A
Available
1

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IRFU9210 Summary of contents

Page 1

... Power MOSFET FEATURES • Dynamic dV/dt Rating - 200 • Repetitive Avalanche Rated 3.0 • Surface Mount (IRFR9210, SiHFR9210) 8.9 • Straight Lead (IRFU9210, SiHFU9210) 2.1 • Available in Tape and Reel 3.9 Single • P-Channel • Fast Switching S • Lead (Pb)-free Available DESCRIPTION The Power MOSFETs technology is the key to Vishay’ ...

Page 2

... IRFR9210, IRFU9210, SiHFR9210, SiHFU9210 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...

Page 3

... TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig Typical Output Characteristics, T Fig Typical Output Characteristics, T Document Number: 91281 S09-0060-Rev. A, 02-Feb-09 IRFR9210, IRFU9210, SiHFR9210, SiHFU9210 = 25 ° 150 °C Fig Normalized On-Resistance vs. Temperature C Vishay Siliconix Fig Typical Transfer Characteristics www.vishay.com 3 ...

Page 4

... IRFR9210, IRFU9210, SiHFR9210, SiHFU9210 Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 91281 S09-0060-Rev. A, 02-Feb-09 ...

Page 5

... Fig Maximum Drain Current vs. Case Temperature Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91281 S09-0060-Rev. A, 02-Feb-09 IRFR9210, IRFU9210, SiHFR9210, SiHFU9210 Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit d(on) r d(off) ...

Page 6

... IRFR9210, IRFU9210, SiHFR9210, SiHFU9210 Vishay Siliconix Vary t to obtain p required I AS D.U. 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com Fig. 12b - Unclamped Inductive Waveforms Fig. 12c - Maximum Avalanche Energy vs. Drain Current I AS ...

Page 7

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91281. Document Number: 91281 S09-0060-Rev. A, 02-Feb-09 IRFR9210, IRFU9210, SiHFR9210, SiHFU9210 Peak Diode Recovery dV/dt Test Circuit + Circuit layout considerations • Low stray inductance • ...

Page 8

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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