IRFD9210 Vishay, IRFD9210 Datasheet

MOSFET P-CH 200V 400MA 4-DIP

IRFD9210

Manufacturer Part Number
IRFD9210
Description
MOSFET P-CH 200V 400MA 4-DIP
Manufacturer
Vishay
Datasheet

Specifications of IRFD9210

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
3 Ohm @ 240mA, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
400mA
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
8.9nC @ 10V
Input Capacitance (ciss) @ Vds
170pF @ 25V
Power - Max
1W
Mounting Type
Through Hole
Package / Case
4-DIP (0.300", 7.62mm)
Transistor Polarity
P Channel
Continuous Drain Current Id
-400mA
Drain Source Voltage Vds
-200V
On Resistance Rds(on)
3ohm
Rds(on) Test Voltage Vgs
-10V
Threshold Voltage Vgs Typ
-4V
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRFD9210

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFD9210
Manufacturer:
IR
Quantity:
90
Part Number:
IRFD9210
Manufacturer:
OKISEMICONDUCTOR
Quantity:
3 596
Part Number:
IRFD9210
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRFD9210PBF
Manufacturer:
AD
Quantity:
5 200
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91140
S10-2464-Rev. C, 25-Oct-10
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
DS
DS(on)
g
gs
gd
SD
DD
(Max.) (nC)
(nC)
(nC)
(V)
 - 2.3 A, dI/dt  70 A/µs, V
= - 50 V, starting T
()
D
HVMDIP
S
a
G
J
= 25 °C, L = 123 mH, R
c
a
a
V
b
DD
GS
 V
= - 10 V
DS
G
, T
P-Channel MOSFET
Single
J
- 200
 150 °C.
8.9
2.1
3.9
g
S
D
= 25 , I
Power MOSFET
A
V
= 25 °C, unless otherwise noted)
GS
3.0
at - 10 V
AS
T
= - 1.6 A (see fig. 12).
for 10 s
A
= 25 °C
T
T
A
A
HVMDIP
IRFD9210PbF
SiHFD9210-E3
IRFD9210
SiHFD9210
= 100 °C
= 25 °C
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• For Automatic Insertion
• End Stackable
• P-Channel
• Fast Switching
• Ease of Paralleling
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
The Power MOSFETs technology is the key to Vishay
advanced line of Power MOSFET transistors. The efficient
geometry and unique processing of the Power MOSFETs
design archieve very low on-state resistance combined with
high transconductance and extreme device ruggedness.
The 4 pin DIP package is a low cost machine-insertable case
style which can be stacked in multiple combinations on
standard 0.1
link to the mounting surface for power dissipation levels up to
1 W.
SYMBOL
T
"
dV/dt
J
V
V
E
E
pin centers. The dual drain serves as a thermal
I
I
P
, T
I
DM
AR
DS
GS
AS
AR
D
D
stg
IRFD9210, SiHFD9210
- 55 to + 150
0.0083
LIMIT
- 0.40
- 0.25
- 0.40
- 200
300
± 20
- 3.2
0.10
- 5.0
210
1.0
Vishay Siliconix
d
www.vishay.com
RoHS*
COMPLIANT
UNIT
W/°C
V/ns
mJ
mJ
°C
W
V
A
A
Available
1

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IRFD9210 Summary of contents

Page 1

... IRFD9210 SiHFD9210 = 25 °C, unless otherwise noted ° 100 ° °C A for  1.6 A (see fig. 12  150 ° IRFD9210, SiHFD9210 Vishay Siliconix pin centers. The dual drain serves as a thermal " SYMBOL LIMIT V - 200 DS V ± 0. 0. 3.2 DM 0.0083 E 210 0.40 ...

Page 2

... IRFD9210, SiHFD9210 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic Input Capacitance Output Capacitance ...

Page 3

... TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) T Fig Typical Output Characteristics Fig Typical Output Characteristics, T Document Number: 91140 S10-2464-Rev. C, 25-Oct- ° ° 150 ° 150 °C A IRFD9210, SiHFD9210 Vishay Siliconix Fig Typical Transfer Characteristics Fig Normalized On-Resistance vs. Temperature www.vishay.com 3 ...

Page 4

... IRFD9210, SiHFD9210 Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage ° 150 °C J SINGLE PULSE Fig Maximum Safe Operating Area Document Number: 91140 S10-2464-Rev. C, 25-Oct-10 ...

Page 5

... Document Number: 91140 S10-2464-Rev. C, 25-Oct- Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit Fig. 10b - Switching Time Waveforms Rectangular Pulse Duration (s) , Rectangular Pulse Duration ( Fig. 12b - Unclamped Inductive Waveforms IRFD9210, SiHFD9210 Vishay Siliconix D.U. d(on) r d(off www.vishay.com ...

Page 6

... IRFD9210, SiHFD9210 Vishay Siliconix Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 kΩ 0.2 µF 0.3 µ D.U. Current sampling resistors Fig. 13b - Gate Charge Test Circuit Document Number: 91140 ...

Page 7

... SD • D.U.T. - device under test P.W. Period D = Period P.W. waveform SD Body diode forward current dI/dt waveform DS Diode recovery dV/dt Body diode forward drop Ripple ≤ for logic level and - 3 V drive devices Fig For P-Channel IRFD9210, SiHFD9210 Vishay Siliconix + + www.vishay.com 7 ...

Page 8

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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