IRLD110 Vishay, IRLD110 Datasheet
IRLD110
Specifications of IRLD110
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IRLD110 Summary of contents
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... W. HVMDIP IRLD110PbF SiHLD110-E3 IRLD110 SiHLD110 = 25 °C, unless otherwise noted ° 5 100 ° °C A for 2.0 A (see fig. 12 175 °C. J IRLD110, SiHLD110 Vishay Siliconix Specified and device design, low on-resistance SYMBOL LIMIT V 100 DS V ± 1 0.70 I 8.0 DM 0.0083 E 490 ...
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... IRLD110, SiHLD110 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic Input Capacitance Output Capacitance ...
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... TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 20 µs PULSE WIDTH T A Fig Typical Output Characteristics µs PULSE WIDTH T A Fig Typical Output Characteristics, T Document Number: 91309 S10-2465-Rev. C, 08-Nov- ° ° 175 °C = 175 °C Fig Normalized On-Resistance vs. Temperature A IRLD110, SiHLD110 Vishay Siliconix Fig Typical Transfer Characteristics www.vishay.com 3 ...
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... IRLD110, SiHLD110 Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage ° 175 °C J SINGLE PULSE Fig Maximum Safe Operating Area Document Number: 91309 S10-2465-Rev. C, 08-Nov-10 ...
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... Fig Maximum Effective Transient Thermal Impedance, Junction-to-Ambient Document Number: 91309 S10-2465-Rev. C, 08-Nov- Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit Fig. 10b - Switching Time Waveforms Rectangular Pulse Duration (s) , Rectangular Pulse Duration ( IRLD110, SiHLD110 Vishay Siliconix D.U. d(on) r d(off) f www.vishay.com 5 ...
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... IRLD110, SiHLD110 Vishay Siliconix Vary t to obtain p required I AS D.U 0. Fig. 12a - Unclamped Inductive Test Circuit Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com Fig. 12b - Unclamped Inductive Waveforms Current regulator Same type as D.U.T. ...
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... SD • D.U.T. - device under test P.W. Period D = Period P.W. waveform SD Body diode forward current dI/dt waveform DS Diode recovery dV/dt Body diode forward drop Ripple ≤ for logic level devices Fig For N-Channel IRLD110, SiHLD110 Vishay Siliconix + + www.vishay.com 7 ...
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... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...