IRFU9120 Vishay, IRFU9120 Datasheet

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IRFU9120

Manufacturer Part Number
IRFU9120
Description
MOSFET P-CH 100V 5.6A I-PAK
Manufacturer
Vishay
Datasheet

Specifications of IRFU9120

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
600 mOhm @ 3.4A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
5.6A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
18nC @ 10V
Input Capacitance (ciss) @ Vds
390pF @ 25V
Power - Max
2.5W
Mounting Type
Through Hole
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.6 Ohms
Drain-source Breakdown Voltage
- 100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
5.6 A
Power Dissipation
2.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRFU9120

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFU9120
Manufacturer:
IR
Quantity:
146
Part Number:
IRFU9120
Manufacturer:
ST
0
Part Number:
IRFU9120NPBF
Manufacturer:
IR
Quantity:
5 000
Company:
Part Number:
IRFU9120NPBF
Quantity:
20 500
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91280
S09-0060-Rev. A, 02-Feb-09
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Linear Derating Factor (PCB Mount)
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
DS
DS(on)
g
gs
gd
SD
DD
(Max.) (nC)
(nC)
(TO-252)
(nC)
(V)
D
≤ - 6.8 A, dI/dt ≤ 110 A/µs, V
DPAK
= - 25 V, starting T
(Ω)
G
S
D
(TO-251)
a
IPAK
J
= 25 °C, L = 10 mH, R
c
DPAK (TO-252)
IRFR9120PbF
SiHFR9120-E3
IRFR9120
SiHFR9120
a
a
G
V
b
D S
GS
DD
= - 10 V
e
≤ V
G
DS
, T
e
P-Channel MOSFET
Single
- 100
IRFR9120, IRFU9120, SiHFR9120, SiHFU9120
J
3.0
9.0
18
≤ 150 °C.
G
= 25 Ω, I
S
D
C
Power MOSFET
V
= 25 °C, unless otherwise noted
0.60
GS
DPAK (TO-252)
IRFR9120TRPbF
SiHFR9120T-E3
IRFR9120TR
SiHFR9120T
at - 10 V
AS
T
T
= - 5.6 A (see fig. 12).
C
A
for 10 s
= 25 °C
= 25 °C
T
T
C
a
a
C
= 100 °C
= 25 °C
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Surface Mount (IRFR9120, SiHFR9120)
• Straight Lead (IRFU9120, SiHFU9120)
• Available in Tape and Reel
• P-Channel
• Fast Switching
• Lead (Pb)-free Available
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effictiveness.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU, SiHFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
a
a
SYMBOL
DPAK (TO-252)
IRFR9120TRLPbF
SiHFR9120TL-E3
IRFR9120TRL
SiHFR9120TL
T
dV/dt
J
V
V
E
E
I
I
P
, T
device
I
DM
AR
DS
GS
AS
AR
D
D
stg
design,
a
a
a
a
- 55 to + 150
LIMIT
0.020
- 100
260
± 20
- 5.6
- 3.6
0.33
- 5.6
- 5.5
- 22
210
4.2
2.5
42
low
Vishay Siliconix
d
IPAK (TO-251)
IRFU9120PbF
SiHFU9120-E3
IRFU9120PbF
SiHFU9120
on-resistance
www.vishay.com
UNIT
W/°C
V/ns
RoHS*
COMPLIANT
mJ
mJ
°C
W
V
A
A
Available
and
1

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IRFU9120 Summary of contents

Page 1

... IRFR9120, IRFU9120, SiHFR9120, SiHFU9120 Power MOSFET FEATURES • Dynamic dV/dt Rating - 100 • Repetitive Avalanche Rated 0.60 • Surface Mount (IRFR9120, SiHFR9120) 18 • Straight Lead (IRFU9120, SiHFU9120) 3.0 • Available in Tape and Reel • P-Channel 9.0 • Fast Switching Single • Lead (Pb)-free Available S ...

Page 2

... IRFR9120, IRFU9120, SiHFR9120, SiHFU9120 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...

Page 3

... TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig Typical Output Characteristics, T Fig Typical Output Characteristics, T Document Number: 91280 S09-0060-Rev. A, 02-Feb-09 IRFR9120, IRFU9120, SiHFR9120, SiHFU9120 = 25 °C C Fig Normalized On-Resistance vs. Temperature = 150 °C C Vishay Siliconix Fig Typical Transfer Characteristics www.vishay.com 3 ...

Page 4

... IRFR9120, IRFU9120, SiHFR9120, SiHFU9120 Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 91280 S09-0060-Rev. A, 02-Feb-09 ...

Page 5

... Fig Maximum Drain Current vs. Case Temperature Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91280 S09-0060-Rev. A, 02-Feb-09 IRFR9120, IRFU9120, SiHFR9120, SiHFU9120 Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit d(on) r d(off) ...

Page 6

... IRFR9120, IRFU9120, SiHFR9120, SiHFU9120 Vishay Siliconix Vary t to obtain p required I AS D.U 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com Fig. 12c - Maximum Avalanche Energy vs. Drain Current Fig. 12b - Unclamped Inductive Waveforms Current regulator Same type as D.U.T. 50 kΩ ...

Page 7

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91280. Document Number: 91280 S09-0060-Rev. A, 02-Feb-09 IRFR9120, IRFU9120, SiHFR9120, SiHFU9120 Peak Diode Recovery dV/dt Test Circuit + Circuit layout considerations • Low stray inductance • ...

Page 8

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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