HUF75339P3 Fairchild Semiconductor, HUF75339P3 Datasheet

MOSFET N-CH 55V 75A TO-220AB

HUF75339P3

Manufacturer Part Number
HUF75339P3
Description
MOSFET N-CH 55V 75A TO-220AB
Manufacturer
Fairchild Semiconductor
Series
UltraFET™r
Datasheet

Specifications of HUF75339P3

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
12 mOhm @ 75A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
75A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
130nC @ 20V
Input Capacitance (ciss) @ Vds
2000pF @ 25V
Power - Max
200W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.012 Ohm @ 10 V
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
75 A
Power Dissipation
200000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
75A
Drain Source Voltage Vds
55V
On Resistance Rds(on)
12mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HUF75339P3
Manufacturer:
FAIRCHILD
Quantity:
12 500
Part Number:
HUF75339P3
Manufacturer:
FAIRCHILD
Quantity:
10 000
Part Number:
HUF75339P3
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
©2001 Fairchild Semiconductor Corporation
75A, 55V, 0.012 Ohm, N-Channel UltraFET
Power MOSFETs
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance. This device is capable
of withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low-
voltage bus switches, and power management in portable
and battery-operated products.
Formerly developmental type TA75339.
Ordering Information
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-263AB variant in tape and reel, e.g., HUF75339S3ST.
Packaging
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
HUF75339G3
HUF75339P3
HUF75339S3S
PART NUMBER
DRAIN
(TAB)
Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html
JEDEC STYLE TO-247
TO-247
TO-220AB
TO-263AB
These N-Channel power MOSFETs
are manufactured using the
innovative UltraFET® process. This
advanced process technology
PACKAGE
Data Sheet
For severe environments, see our Automotive HUFA series.
SOURCE
75339G
75339P
75339S
DRAIN
SOURCE
BRAND
GATE
GATE
HUF75339G3, HUF75339P3, HUF75339S3S
JEDEC TO-263AB
Features
• 75A, 55V
• Simulation Models
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
Symbol
- Temperature Compensated PSPICE® and SABER™
- SPICE and SABER Thermal Impedance Models
- TB334, “Guidelines for Soldering Surface Mount
(FLANGE)
Models
Available on the WEB at: www.fairchildsemi.com
Components to PC Boards”
DRAIN
December 2001
(FLANGE)
DRAIN
JEDEC TO-220AB
G
HUF75339G3, HUF75339P3, HUF75339S3S Rev. B
D
S
SOURCE
DRAIN
GATE

Related parts for HUF75339P3

HUF75339P3 Summary of contents

Page 1

... UIS Rating Curve • Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol BRAND 75339G 75339P 75339S SOURCE DRAIN GATE JEDEC TO-263AB DRAIN GATE (FLANGE) SOURCE JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) HUF75339G3, HUF75339P3, HUF75339S3S Rev. B ...

Page 2

... V g(TOT 10V g(10 g(TH) GS (Figure 13 Figure 4 Figures 6, 14, 15 200 1.35 -55 to 175 300 260 MIN TYP 150 0.010 - - - - - - - - - 30V, - 110 DD 75A 0 1.0mA - 3.7 g(REF HUF75339G3, HUF75339P3, HUF75339S3S Rev. B UNITS MAX UNITS - 250 A 100 0.012 o 0. C/W 110 130 4 ...

Page 3

... C) FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT RECTANGULAR PULSE DURATION (s) MIN TYP - 2000 - 700 - 160 MIN TYP - - - - - - 100 125 CASE TEMPERATURE ( C CASE TEMPERATURE P DM NOTES: DUTY FACTOR PEAK HUF75339G3, HUF75339P3, HUF75339S3S Rev. B MAX UNITS - MAX UNITS 1. 160 nC 150 175 ...

Page 4

... (L)(I )/(1.3*RATED DSS (L/R)ln[(I *R)/(1.3*RATED DSS STARTING T o STARTING T = 150 C J 0.01 0 TIME IN AVALANCHE (ms) AV PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX V = 15V - 1.5 3.0 4 GATE TO SOURCE VOLTAGE (V) GS FIGURE 8. TRANSFER CHARACTERISTICS HUF75339G3, HUF75339P3, HUF75339S3S Rev + 175 C 6.0 7.5 ...

Page 5

... FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE WAVEFORMS IN DESCENDING ORDER 30V GATE CHARGE (nC 1.0 0.8 0.6 0.4 -80 - JUNCTION TEMPERATURE ( J JUNCTION TEMPERATURE ISS C RSS C OSS C ISS C OSS C RSS DRAIN TO SOURCE VOLTAGE ( 75A 56A 37. 18A HUF75339G3, HUF75339P3, HUF75339S3S Rev 250 120 160 200 0V 1MHz = ...

Page 6

... FIGURE 18. SWITCHING TIME TEST CIRCUIT ©2001 Fairchild Semiconductor Corporation DUT 0. DUT g(REF DUT DSS FIGURE 15. UNCLAMPED ENERGY WAVEFORMS Q g(TOT g(10 10V g(TH FIGURE 17. GATE CHARGE WAVEFORM d(ON 90% 10% 50% PULSE WIDTH FIGURE 19. RESISTIVE SWITCHING WAVEFORMS HUF75339G3, HUF75339P3, HUF75339S3S Rev 20V GS t OFF d(OFF 90% 10% 90% 50% ...

Page 7

... DPLCAP 10 RSLC2 - 6 ESG 8 EVTHRES + - + 19 LGATE EVTEMP 8 RGATE - RLGATE CIN S1A S2A S1B S2B EGS EDS LDRAIN 5 RLDRAIN RSLC1 DBREAK ESLC DBODY RDRAIN EBREAK MWEAK MMED MSTRO LSOURCE 8 7 RSOURCE RLSOURCE RBREAK 17 18 RVTEMP VBAT RVTHRES HUF75339G3, HUF75339P3, HUF75339S3S Rev. B DRAIN 2 SOURCE 3 ...

Page 8

... LGATE EVTEMP RGATE - + RLGATE S1A S2A S1B S2B EGS EDS LDRAIN 5 RLDRAIN RSLC1 RDBREAK 51 72 RDBODY ISCL DBREAK 50 71 RDRAIN MWEAK 8 DBODY EBREAK MMED + MSTRO 17 18 LSOURCE - CIN 8 7 RSOURCE RLSOURCE RBREAK RVTEMP VBAT RVTHRES HUF75339G3, HUF75339P3, HUF75339S3S Rev. B DRAIN 2 SOURCE 3 ...

Page 9

... Fairchild Semiconductor Corporation JUNCTION th RTHERM1 CTHERM1 6 RTHERM2 CTHERM2 5 RTHERM3 CTHERM3 4 RTHERM4 CTHERM4 3 RTHERM5 CTHERM5 2 RTHERM6 CTHERM6 tl CASE HUF75339G3, HUF75339P3, HUF75339S3S Rev. B ...

Page 10

... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. ® ACEx Build it Now™ CorePLUS™ CROSSVOLT™ CTL™ Current Transfer Logic™ ...

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