IRFR320TRL Vishay, IRFR320TRL Datasheet
IRFR320TRL
Specifications of IRFR320TRL
Related parts for IRFR320TRL
IRFR320TRL Summary of contents
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... SiHFU series) is for through-hole S mounting applications. Power dissipation levels up to 1.5 W N-Channel MOSFET are possible in typical surface mount applications. DPAK (TO-252) DPAK (TO-252) a IRFR320TRLPbF IRFR320TRPbF a SiHFR320TL-E3 SiHFR320T-E3 a IRFR320TRL IRFR320TR a SiHFR320TL SiHFR320T = 25 °C, unless otherwise noted ° 100 °C ...
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... IRFR320, IRFU320, SiHFR320, SiHFU320 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...
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... TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig Typical Output Characteristics, T Fig Typical Output Characteristics, T Document Number: 91273 S-82991-Rev. B, 12-Jan-09 IRFR320, IRFU320, SiHFR320, SiHFU320 = 25 °C Fig Typical Transfer Characteristics C Fig Normalized On-Resistance vs. Temperature = 150 °C C Vishay Siliconix www.vishay.com 3 ...
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... IRFR320, IRFU320, SiHFR320, SiHFU320 Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 91273 S-82991-Rev. B, 12-Jan-09 ...
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... Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91273 S-82991-Rev. B, 12-Jan-09 IRFR320, IRFU320, SiHFR320, SiHFU320 Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit d(on) Fig. 10b - Switching Time Waveforms Vishay Siliconix D.U. d(off) f www.vishay.com 5 ...
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... IRFR320, IRFU320, SiHFR320, SiHFU320 Vishay Siliconix Vary t to obtain p required I AS D.U 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com Fig. 12c - Maximum Avalanche Energy vs. Drain Current Fig. 12b - Unclamped Inductive Waveforms Current regulator Same type as D.U.T. 50 kΩ ...
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... V GS Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91273. Document Number: 91273 S-82991-Rev ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...