FDPF13N50FT Fairchild Semiconductor, FDPF13N50FT Datasheet - Page 2

MOSFET N-CH 500V 12A TO-220F

FDPF13N50FT

Manufacturer Part Number
FDPF13N50FT
Description
MOSFET N-CH 500V 12A TO-220F
Manufacturer
Fairchild Semiconductor
Series
UniFET™r
Datasheet

Specifications of FDPF13N50FT

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
540 mOhm @ 6A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
12A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
39nC @ 10V
Input Capacitance (ciss) @ Vds
1930pF @ 25V
Power - Max
42W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.54 Ohm @ 10 V
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
12 A
Power Dissipation
42000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDPF13N50FT
Manufacturer:
Fairchi/ON
Quantity:
17 410
Company:
Part Number:
FDPF13N50FT
Quantity:
9 000
FDP13N50F / FDPF13N50FT Rev.
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 9.5mH, I
3. I
4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
Package Marking and Ordering Information
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
BV
∆BV
I
I
V
R
g
C
C
C
Q
Q
Q
t
t
t
t
I
I
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
∆T
FS
GS(th)
SD
DS(on)
iss
oss
rss
g(tot)
gs
gd
rr
SD
Device Marking
DSS
Symbol
FDPF13N50FT
J
≤ 12A, di/dt ≤ 200A/µs, V
DSS
FDP13N50F
AS
= 12A, V
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
DD
= 50V, R
DD
≤ BV
FDPF13N50FT
FDP13N50F
G
DSS
= 25Ω, Starting T
Device
, Starting T
Parameter
J
= 25°C
J
= 25°C
Package
TO-220F
TO-220
I
I
V
V
V
V
V
dI
V
V
V
V
f = 1MHz
V
V
V
R
D
D
DS
DS
GS
DD
GS
GS
GS
GS
DS
DS
DS
GS
G
F
= 250µA, V
= 250µA, Referenced to 25
/dt = 100A/µs
= 25Ω
= 500V, V
= 400V, T
= 0V, I
= ±20V, V
= 20V, I
= 25V, V
= 400V, I
= 250V, I
= 0V, I
= V
= 10V, I
= 10V
DS
T
Test Conditions
, I
C
SD
2
SD
D
Reel Size
D
= 25
D
GS
GS
D
D
= 6A
= 12A
= 12A
GS
C
= 6A
DS
= 250µA
= 13A
= 13A
= 125
= 0V
= 0V, T
o
-
-
= 0V
= 0V
C unless otherwise noted
o
C
J
= 25
(Note 4, 5)
(Note 4, 5)
o
(Note 4)
(Note 4)
o
C
C
Tape Width
-
-
Min.
500
3.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1450
Typ.
0.45
14.5
0.42
13.3
154
198
0.7
28
54
75
47
30
12
8
-
-
-
-
-
-
-
-
Quantity
www.fairchildsemi.com
Max.
±100
1930
0.54
120
160
105
100
265
1.5
5.0
65
10
22
39
12
48
50
50
-
-
-
-
-
-
-
Units
V/
nC
nC
nC
µA
pF
pF
pF
nA
ns
ns
ns
ns
ns
µC
V
A
A
V
V
S
o
C

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