FDPF13N50FT Fairchild Semiconductor, FDPF13N50FT Datasheet - Page 3

• Manufacturer Part Number: FDPF13N50FT
• Description: MOSFET N-CH 500V 12A TO-220F
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDPF13N50FT

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 540 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 39nC @ 10V
• Input Capacitance (ciss) @ Vds: 1930pF @ 25V
• Power - Max: 42W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.54 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 12 A
• Power Dissipation: 42000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDP13N50F / FDPF13N50FT Rev.
Typical Performance Characteristics
3000
1500
Figure 5. Capacitance Characteristics
Figure 3. On-Resistance Variation vs.
10
0.9
0.8
0.7
0.6
0.5
0.4
0.3
Figure 1. On-Region Characteristics
30
1
0
0.1
1
0
V
GS
=
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
V
V
Drain Current and Gate Voltage
DS
DS
C
C
C
10
, Drain-Source Voltage [V]
,Drain-Source Voltage[V]
rss
oss
iss
I
D
, Drain Current [A]
V
GS
C iss = C gs + C gd
C oss = C ds + C gd
C rss = C gd
1
= 10V
20
*Notes:
V
1. 250
2. T
GS
= 20V
*Note: T
C
= 25
µ
(
C ds = shorted
s Pulse Test
30
10
*Note:
o
1. V
2. f = 1MHz
C
10
J
= 25
GS
= 0V
o
C
)
20
30
40
3
Figure 2. Transfer Characteristics
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
100
10
10
50
10
1
8
6
4
2
0
1
0.0
3
0
*Notes:
1. V
2. 250
V
DS
5
SD
µ
0.5
Variation vs. Source Current
and Temperature
4
= 20V
s Pulse Test
, Body Diode Forward Voltage [V]
V
Q
GS
150
g
, Total Gate Charge [nC]
,Gate-Source Voltage[V]
10
o
150
C
V
V
V
DS
DS
DS
1.0
5
o
= 100V
= 250V
= 400V
C
15
25
o
C
25
1.5
6
*Notes:
1. V
2. 250
o
C
*Note: I
20
GS
µ
= 0V
s Pulse Test
2.0
7
D
25
= 13A
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30
2.5
8