MOSFET N-CH 500V 8A TO220F

FDPF8N50NZ

Manufacturer Part NumberFDPF8N50NZ
DescriptionMOSFET N-CH 500V 8A TO220F
ManufacturerFairchild Semiconductor
SeriesUniFET™
FDPF8N50NZ datasheet
 


Specifications of FDPF8N50NZ

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs850 mOhm @ 4A, 10VDrain To Source Voltage (vdss)500V
Current - Continuous Drain (id) @ 25° C8AVgs(th) (max) @ Id5V @ 250µA
Gate Charge (qg) @ Vgs18nC @ 10VInput Capacitance (ciss) @ Vds735pF @ 25V
Power - Max40.3WMounting TypeThrough Hole
Package / CaseTO-220FPTransistor PolarityN-Channel
Resistance Drain-source Rds (on)0.77 OhmsForward Transconductance Gfs (max / Min)6.3 S
Drain-source Breakdown Voltage500 VGate-source Breakdown Voltage25 V
Continuous Drain Current8 APower Dissipation40.3 W
Maximum Operating Temperature+ 125 CMounting StyleThrough Hole
Gate Charge Qg14 nCMinimum Operating Temperature- 55 C
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
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FDP8N50NZ / FDPF8N50NZ
N-Channel MOSFET
500V, 8A, 0.85
Features
• R
= 0.77 ( Typ.) @ V
DS(on)
GS
• Low Gate Charge ( Typ. 14nC)
• Low C
( Typ. 5pF)
rss
• Fast Switching
• 100% Avalanche Tested
• Improve dv/dt Capability
• ESD Improved Capability
• RoHS Compliant
TO-220
G D S
FDP Series
MOSFET Maximum Ratings
Symbol
V
Drain to Source Voltage
DSS
V
Gate to Source Voltage
GSS
I
Drain Current
D
I
Drain Current
DM
E
Single Pulsed Avalanche Energy
AS
I
Avalanche Current
AR
E
Repetitive Avalanche Energy
AR
dv/dt
Peak Diode Recovery dv/dt
P
Power Dissipation
D
T
, T
Operating and Storage Temperature Range
J
STG
Maximum Lead Temperature for Soldering Purpose,
T
L
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
R
Thermal Resistance, Junction to Case
JC
R
Thermal Resistance, Case to Sink Typ.
CS
R
Thermal Resistance, Junction to Ambient
JA
©2010 Fairchild Semiconductor Corporation
FDP8N50NZ / FDPF8N50NZ Rev.A
Description
= 10V, I
= 4A
This N-Channel enhancement mode power field effect transistors
D
are produced using Fairchild's proprietary, planar stripe, DMOS
technology.
This advance technology has been especially tailored to
minimize on-state resistance, provide superior
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switching mode power supplies and active power factor
correction.
TO-220F
G
D
S
FDPF Series
(potted)
o
T
= 25
C unless otherwise noted
C
Parameter
o
-Continuous (T
= 25
C)
C
o
-Continuous (T
= 100
C)
C
- Pulsed
o
(T
= 25
C)
C
o
- Derate above 25
C
Parameter
1
March 2010
UniFET
D
D
G
G
S
S
FDP8N50NZ FDPF8N50NZ
500
±25
8
8*
4.8
4.8*
(Note 1)
32
32*
(Note 2)
122
(Note 1)
8
(Note 1)
13
(Note 3)
10
130
40.3
1
0.3
-55 to +150
300
FDP8N50NZ FDPF8N50NZ
0.96
3.1
0.5
-
62.5
62.5
www.fairchildsemi.com
TM
tm
switching
Units
V
V
A
A
mJ
A
mJ
V/ns
W
o
W/
C
o
C
o
C
Units
o
C/W

FDPF8N50NZ Summary of contents

  • Page 1

    ... R Thermal Resistance, Case to Sink Typ. CS R Thermal Resistance, Junction to Ambient JA ©2010 Fairchild Semiconductor Corporation FDP8N50NZ / FDPF8N50NZ Rev.A Description = 10V This N-Channel enhancement mode power field effect transistors D are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to ...

  • Page 2

    ... Starting 8A, di/dt  200A/s, V  Starting DSS 4. Pulse Test: Pulse width  300s, Duty Cycle  Essentially Independent of Operating Temperature Typical Characteristics FDP8N50NZ / FDPF8N50NZ Rev.A Package Reel Size TO-220 - TO-220F - unless otherwise noted C Test Conditions I = 250 ...

  • Page 3

    ... I , Drain Current [A] D Figure 5. Capacitance Characteristics 1200 C iss = oss = oss C rss = C gd 900 C iss 600 300 C rss 0 0 Drain-Source Voltage [V] DS FDP8N50NZ / FDPF8N50NZ Rev.A Figure 2. Transfer Characteristics *Notes:  1. 250 s Pulse Test 0 Figure 4. Body Diode Forward Voltage 100 20V GS o *Note: T ...

  • Page 4

    ... Figure 11. Maximum Drain Current vs. Case Temperature Case Temperature C FDP8N50NZ / FDPF8N50NZ Rev.A (Continued) Figure 8. On-Resistance Variation 2.5 2.0 1.5 1.0 *Notes: 0  250 ...

  • Page 5

    ... Transient Thermal Response Curve - FDP8N50NZ 2 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 Single pulse 0. Figure 13. Transient Thermal Response Curve - FDPF8N50NZ 5 0.5 1 0.2 0.1 0.05 0.1 0.02 0.01 Single pulse 0. FDP8N50NZ / FDPF8N50NZ Rev ...

  • Page 6

    ... FDP8N50NZ / FDPF8N50NZ Rev.A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 6 www.fairchildsemi.com ...

  • Page 7

    ... FDP8N50NZ / FDPF8N50NZ Rev.A Peak Diode Recovery dv/dt Test Circuit & Waveforms + + • • • I • www.fairchildsemi.com ...

  • Page 8

    ... Mechanical Dimensions FDP8N50NZ / FDPF8N50NZ Rev.A TO-220 8 www.fairchildsemi.com ...

  • Page 9

    ... Package Dimensions * Front/Back Side Isolation Voltage : 2500V FDP8N50NZ / FDPF8N50NZ Rev.A TO-220F 9 Dimensions in Millimeters www.fairchildsemi.com ...

  • Page 10

    ... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDP8N50NZ / FDPF8N50NZ Rev.A FPS™ PowerTrench F-PFS™ PowerXS™ ® FRFET Programmable Active Droop™ SM ® Global Power Resource QFET Green FPS™ ...