FCPF7N60 Fairchild Semiconductor, FCPF7N60 Datasheet

MOSFET N-CH 600V 7A TO220F

FCPF7N60

Manufacturer Part Number
FCPF7N60
Description
MOSFET N-CH 600V 7A TO220F
Manufacturer
Fairchild Semiconductor
Series
SuperFET™r
Datasheet

Specifications of FCPF7N60

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
600 mOhm @ 3.5A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
7A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
30nC @ 10V
Input Capacitance (ciss) @ Vds
920pF @ 25V
Power - Max
31W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FCPF7N60_NL
FCPF7N60_NL

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FCPF7N60
Manufacturer:
FSC
Quantity:
1 000
Part Number:
FCPF7N60
Manufacturer:
ST
Quantity:
20 000
Part Number:
FCPF7N60
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FCPF7N60
Quantity:
50
©2008 Fairchild Semiconductor Corporation
FCP7N60/FCPF7N60/FCPF7N60YDTU Rev. A1
FCP7N60/FCPF7N60/FCPF7N60YDTU
Features
• 650V @T
• Typ. Rds(on)=0.53Ω
• Ultra low gate charge (typ. Qg=25nC)
• Low effective output capacitance (typ. Coss.eff=60pF)
• 100% avalanche tested
• RoHS Compliant
Absolute Maximum Ratings
*Drain current limited by maximum junction temperature
Thermal Characteristics
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
D
DM
AR
J,
L
DSS
GSS
AS
AR
D
Symbol
Symbol
θJC
θJA
T
STG
J
G
= 150°C
D
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Operating and Storage Temperature Range
S
TO-220
FCP Series
- Continuous (T
- Continuous (T
- Pulsed
(T
- Derate above 25°C
Parameter
Parameter
C
= 25°C)
G
C
C
= 25°C)
= 100°C)
D
S
1
Description
SuperFET
voltage MOSFET family that is utilizing an advanced charge
balance mechanism for outstanding low on-resistance and
lower gate charge performance.
This advanced technology has been tailored to minimize con-
duction loss, provide superior switching performance, and with-
stand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET is very suitable for various AC/DC
power conversion in switching mode operation for system min-
iaturization and higher efficiency.
(Note 2)
(Note 1)
(Note 1)
(Note 3)
(Note 1)
TO-220F
FCPF Series
TM
FCP7N60
FCP7N60
is, Fairchild’s proprietary, new generation of high
0.67
4.4
21
83
62.5
7
1.5
-55 to +150
± 30
600
230
300
8.3
4.5
7
FCPF7N60
FCPF7N60
G
SuperFET
0.25
4.4*
21*
31
7*
62.5
4.0
December 2008
S
D
www.fairchildsemi.com
Unit
W/°C
V/ns
Unit
°C/W
°C/W
mJ
mJ
°C
°C
W
V
A
A
A
V
A
TM

Related parts for FCPF7N60

FCPF7N60 Summary of contents

Page 1

... R Thermal Resistance, Junction-to-Case θJC R Thermal Resistance, Junction-to-Ambient θJA ©2008 Fairchild Semiconductor Corporation FCP7N60/FCPF7N60/FCPF7N60YDTU Rev. A1 Description TM SuperFET voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize con- duction loss, provide superior switching performance, and with- stand extreme dv/dt rate and higher avalanche energy ...

Page 2

... Repetitive Rating: Pulse width limited by maximum junction temperature 3.5A 50V 25Ω, Starting ≤ 7A, di/dt ≤ 200A/μs, V ≤ Starting DSS 4. Essentially Independent of Operating Temperature Typical Characteristics FCP7N60/FCPF7N60/FCPF7N60YDTU Rev. A1 Package Reel Size TO-220 TO-220F TO-220F (Forming 25°C unless otherwise noted C Conditions 250μ 0V 250μ ...

Page 3

... I , Drain Current [A] D Figure 5. Capacitance Characteristics 3000 2000 C oss C 1000 iss C rss Drain-Source Voltage [V] DS FCP7N60/FCPF7N60/FCPF7N60YDTU Rev. A1 Figure 2. Transfer Characteristics ※ Notes : 1. 250μ s Pulse Test = 25 ℃ Figure 4. Body Diode Forward Voltage 10V 20V GS ※ ℃ ...

Page 4

... J 3. Single Pulse - Drain-Source Voltage [V] DS Figure 10. Maximum Drain Current vs. Case Temperature 10.0 7.5 5.0 2.5 0 Case Temperature [ ] C FCP7N60/FCPF7N60/FCPF7N60YDTU Rev. A1 (Continued) Figure 8. On-Resistance Variation 3.0 2.5 2.0 1.5 1.0 ※ Notes : 250 μ 0.5 0.0 100 150 200 -100 o C] Figure 9-2. Maximum Safe Operating Area ...

Page 5

... Typical Performance Characteristics Figure 11-1. Transient Thermal Response Curve for FCP7N60 Figure 11-2. Transient Thermal Response Curve for FCPF7N60 FCP7N60/FCPF7N60/FCPF7N60YDTU Rev. A1 (Continued tio tio ※ ℃ ( θ (t) θ ※ ℃ ( θ (t) θ www.fairchildsemi.com ...

Page 6

... K Ω Ω Unclamped Inductive Switching Test Circuit & Waveforms FCP7N60/FCPF7N60/FCPF7N60YDTU Rev. A1 Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms www.fairchildsemi.com ...

Page 7

... FCP7N60/FCPF7N60/FCPF7N60YDTU Rev. A1 Peak Diode Recovery dv/dt Test Circuit & Waveforms + + • • • I • www.fairchildsemi.com ...

Page 8

... Mechanical Dimensions FCP7N60/FCPF7N60/FCPF7N60YDTU Rev 220 8 Dimensions in Millimeters www.fairchildsemi.com ...

Page 9

... Mechanical Dimensions MAX1.47 0.80 ±0.10 0.35 ±0.10 2.54TYP [2.54 ] ±0.20 FCP7N60/FCPF7N60/FCPF7N60YDTU Rev. A1 (Continued) TO-220F 10.16 ø3.18 ±0.20 ±0.10 (7.00) (1.00x45°) #1 2.54TYP [2.54 ] ±0.20 9.40 ±0.20 9 2.54 ±0.20 (0.70) +0.10 0.50 2.76 ±0.20 –0.05 Dimensions in Millimeters www.fairchildsemi.com ...

Page 10

... Mechanical Dimensions FCP7N60/FCPF7N60/FCPF7N60YDTU Rev. A1 (Continued) TO-220F (Y Forming) 10 www.fairchildsemi.com ...

Page 11

... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FCP7N60/FCPF7N60/FCPF7N60YDTU Rev. A1 ® FRFET Programmable Active Droop™ SM ® Global Power Resource QFET Green FPS™ QS™ Green FPS™ e-Series™ ...

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