IRF9530 Vishay, IRF9530 Datasheet
IRF9530
Specifications of IRF9530
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IRF9530 Summary of contents
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... TO-220 IRF9530PbF SiHF9530-E3 IRF9530 SiHF9530 = 25 °C, unless otherwise noted ° 100 ° °C C for screw = 25 Ω (see fig. 12 ≤ 175 ° IRF9530, SiHF9530 Vishay Siliconix device design, low on-resistance SYMBOL LIMIT V - 100 DS V ± 8 0.59 E 400 ...
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... IRF9530, SiHF9530 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance ...
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... TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig Typical Output Characteristics, T Fig Typical Output Characteristics, T Document Number: 91076 S-81272-Rev. A, 16-Jun- °C Fig Typical Transfer Characteristics C Fig Normalized On-Resistance vs. Temperature = 175 °C C IRF9530, SiHF9530 Vishay Siliconix www.vishay.com 3 ...
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... IRF9530, SiHF9530 Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 91076 S-81272-Rev. A, 16-Jun-08 ...
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... Fig Maximum Drain Current vs. Case Temperature Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91076 S-81272-Rev. A, 16-Jun-08 IRF9530, SiHF9530 Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit d(on) r d(off Fig. 10b - Switching Time Waveforms www ...
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... IRF9530, SiHF9530 Vishay Siliconix Vary t to obtain p required I AS D.U 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com Fig. 12c - Maximum Avalanche Energy vs. Drain Current Fig. 12b - Unclamped Inductive Waveforms Current regulator Same type as D.U.T. ...
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... SD • D.U.T. - device under test Period D = Period P.W. waveform SD Body diode forward current dI/dt waveform DS Diode recovery dV/dt Body diode forward drop Ripple ≤ for logic level and - 3 V drive devices GS Fig For P-Channel IRF9530, SiHF9530 Vishay Siliconix + + P. www.vishay.com 7 ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...