FQA36P15 Fairchild Semiconductor, FQA36P15 Datasheet

MOSFET P-CH 150V 36A TO-3P

FQA36P15

Manufacturer Part Number
FQA36P15
Description
MOSFET P-CH 150V 36A TO-3P
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet

Specifications of FQA36P15

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
90 mOhm @ 18A, 10V
Drain To Source Voltage (vdss)
150V
Current - Continuous Drain (id) @ 25° C
36A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
105nC @ 10V
Input Capacitance (ciss) @ Vds
3320pF @ 25V
Power - Max
294W
Mounting Type
Through Hole
Package / Case
TO-3P-3 (Straight Leads)
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.09 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
19.5 S
Drain-source Breakdown Voltage
150 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
36 A
Power Dissipation
294000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FQA36P15
Manufacturer:
FSC
Quantity:
5 000
Part Number:
FQA36P15
Manufacturer:
FSC
Quantity:
86 755
©2010 Fairchild Semiconductor Corporation
FQA36P15 / FQA36P15_F109 Rev. B2
FQA36P15 / FQA36P15_F109
150V P-Channel MOSFET
Features
• -36A, -150V, R
• Low gate charge ( typical 81 nC)
• Low Crss ( typical 110pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
Absolute Maximum Ratings
Thermal Characteristics
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J
L
DSS
GSS
AS
AR
D
θJC
θCS
θJA
, T
Symbol
Symbol
STG
DS(on)
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
= 0.09Ω @V
G
D
S
GS
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
= -10 V
C
= 25°C)
Parameter
Parameter
TO-3P
FQA Series
C
C
= 25°C)
= 100°C)
1
Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies, active power factor
correction, electronic lamp ballast based on half bridge
topology.
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
G
Typ
0.24
--
--
FQA36P15
-55 to +175
-25.5
1400
-150
-144
± 30
29.4
1.96
-5.0
294
300
-36
-36
S
D
Max
0.51
40
--
September 2010
QFET
www.fairchildsemi.com
Units
Units
°C/W
°C/W
°C/W
W/°C
V/ns
mJ
mJ
°C
°C
W
V
A
A
A
V
A
®

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FQA36P15 Summary of contents

Page 1

... R Thermal Resistance, Case-to-Sink θCS R Thermal Resistance, Junction-to-Ambient θJA ©2010 Fairchild Semiconductor Corporation FQA36P15 / FQA36P15_F109 Rev. B2 Description = -10 V These P-Channel enhancement mode power field effect GS transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to ...

Page 2

... V = -50V ≤ -36A, di/dt ≤300A/µs, V ≤ Starting DSS, 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ Essentially independent of operating temperature FQA36P15 / FQA36P15_F109 Rev. B2 Package Reel Size TO-3PN -- TO-3PN -- T = 25°C unless otherwise noted C Test Conditions = -250 µ ...

Page 3

... Drain Current [A] D Figure 5. Capacitance Characteristics 8000 7000 C oss 6000 C iss 5000 4000 3000 C rss 2000 1000 Drain-Source Voltage [V] DS FQA36P15 / FQA36P15_F109 Rev. B2 Figure 2. Transfer Characteristics Notes : ※ 1. 250µ s Pulse Test ℃ Figure 4. Body Diode Forward Voltage -10V -20V GS Note : ℃ ...

Page 4

... Notes : 175 J 3. Single Pulse - Drain-Source Voltage [V] DS Figure 11. Transient Thermal Response Curve FQA36P15 / FQA36P15_F109 Rev. B2 (Continued) Figure 8. On-Resistance Variation 3.0 2.5 2.0 1.5 1.0 ※ Notes : 0 -250 µ 0.0 100 150 200 -100 o C] Figure 10. Maximum Drain Current 100 µ ...

Page 5

... Unclamped Inductive Switching Test Circuit & Waveforms FQA36P15 / FQA36P15_F109 Rev. B2 Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...

Page 6

... FQA36P15 / FQA36P15_F109 Rev. B2 Peak Diode Recovery dv/dt Test Circuit & Waveforms 6 www.fairchildsemi.com ...

Page 7

... Mechanical Dimensions FQA36P15 / FQA36P15_F109 Rev. B1 (Continued) TO-3PN 8 Dimensions in Millimeters www.fairchildsemi.com ...

Page 8

... Datasheet Identification Product Status Advance Information Formative or In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FQA36P15 / FQA36P15_F109 Rev. B2 Green FPS™ Power247 Green FPS™ e-Series™ POWEREDGE GTO™ Power-SPM™ PowerTrench i-Lo™ IntelliMAX™ ...

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