IRLD024 Vishay, IRLD024 Datasheet

MOSFET N-CH 60V 2.5A 4-DIP

IRLD024

Manufacturer Part Number
IRLD024
Description
MOSFET N-CH 60V 2.5A 4-DIP
Manufacturer
Vishay
Datasheet

Specifications of IRLD024

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
100 mOhm @ 1.5A, 5V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
2.5A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
18nC @ 5V
Input Capacitance (ciss) @ Vds
870pF @ 25V
Power - Max
1.3W
Mounting Type
Through Hole
Package / Case
4-DIP (0.300", 7.62mm)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRLD024

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRLD024
Manufacturer:
IR
Quantity:
9
Part Number:
IRLD024
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRLD024PBF
Manufacturer:
IR
Quantity:
20 000
Company:
Part Number:
IRLD024PBF
Quantity:
70 000
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91308
S10-2465-Rev. C, 08-Nov-10
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Single Pulse Avalanche Energy
Maximum Power Dissipation
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
DS
DS(on)
g
gs
gd
SD
DD
(Max.) (nC)
(nC)
(nC)
(V)
 17 A, dI/dt  140 A/µs, V
= 25 V, starting T
()
D
HVMDIP
S
a
J
G
= 25 °C, L = 16 mH, R
c
DD
b
V
GS
 V
= 5.0 V
DS
G
, T
N-Channel MOSFET
J
Single
 175 °C.
4.5
60
18
12
g
= 25 , I
D
S
Power MOSFET
A
V
0.10
= 25 °C, unless otherwise noted)
GS
AS
at 5.0 V
= 2.5 A (see fig. 12).
T
for 10 s
A
= 25 °C
T
T
A
A
HVMDIP
IRLD024PbF
SiHLD024-E3
IRLD024
SiHLD024
= 100 °C
= 25 °C
FEATURES
• Dynamic dV/dt Rating
• For Automatic Insertion
• End Stackable
• Logic-Level Gate Drive
• R
• 175 °C Operating Temperature
• Fast Switching
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The 4 pin DIP package is a low cost machine-insertiable
case style which can be stacked in multiple combinations on
standard 0.1" pin centers. The dual drain servers as a
thermal link to the mounting surface for power dissipation
levels up to 1 W.
DS(on)
Specified at V
SYMBOL
T
dV/dt
J
V
V
E
I
P
, T
device
I
DM
DS
GS
AS
D
D
stg
IRLD024, SiHLD024
design,
GS
= 4 V and 5 V
- 55 to + 175
0.0083
LIMIT
300
± 10
2.5
1.8
1.3
4.5
60
20
91
low
Vishay Siliconix
d
on-resistance
www.vishay.com
UNIT
W/°C
V/ns
RoHS*
COMPLIANT
mJ
°C
W
V
A
Available
and
1

Related parts for IRLD024

IRLD024 Summary of contents

Page 1

... W. HVMDIP IRLD024PbF SiHLD024-E3 IRLD024 SiHLD024 = 25 °C, unless otherwise noted ° 5 100 ° °C A for  2.5 A (see fig. 12  175 ° IRLD024, SiHLD024 Vishay Siliconix Specified and device design, low on-resistance SYMBOL LIMIT ± 2 1 0.0083 ...

Page 2

... IRLD024, SiHLD024 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic Input Capacitance Output Capacitance ...

Page 3

... TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 20 µs PULSE WIDTH °C A Fig Typical Output Characteristics µs PULSE WIDTH T A Fig Typical Output Characteristics, T Document Number: 91308 S10-2465-Rev. C, 08-Nov- ° 175 °C = 175 °C A IRLD024, SiHLD024 Vishay Siliconix Fig Typical Transfer Characteristics Fig Normalized On-Resistance vs. Temperature www.vishay.com 3 ...

Page 4

... IRLD024, SiHLD024 Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage ° 175 °C J SINGLE PULSE Fig Maximum Safe Operating Area Document Number: 91308 S10-2465-Rev. C, 08-Nov-10 ...

Page 5

... Fig Maximum Effective Transient Thermal Impedance, Junction-to-Ambient Document Number: 91308 S10-2465-Rev. C, 08-Nov- 5.0 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit Fig. 10b - Switching Time Waveforms Rectangular Pulse Duration (s) , Rectangular Pulse Duration ( IRLD024, SiHLD024 Vishay Siliconix D.U. d(on) r d(off) f www.vishay.com 5 ...

Page 6

... IRLD024, SiHLD024 Vishay Siliconix Vary t to obtain p required I AS D.U. 5.0 V 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com Fig. 12c - Maximum Avalanche Energy vs. Drain Current Fig. 12b - Unclamped Inductive Waveforms Current regulator Same type as D.U.T. 50 kΩ ...

Page 7

... SD • D.U.T. - device under test P.W. Period D = Period P.W. waveform SD Body diode forward current dI/dt waveform DS Diode recovery dV/dt Body diode forward drop Ripple ≤ for logic level devices Fig For N-Channel IRLD024, SiHLD024 Vishay Siliconix + + www.vishay.com 7 ...

Page 8

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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