IRFS9N60ATRRPBF Vishay, IRFS9N60ATRRPBF Datasheet

MOSFET N-CH 600V 9.2A D2PAK

IRFS9N60ATRRPBF

Manufacturer Part Number
IRFS9N60ATRRPBF
Description
MOSFET N-CH 600V 9.2A D2PAK
Manufacturer
Vishay
Datasheet

Specifications of IRFS9N60ATRRPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
750 mOhm @ 5.5A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
9.2A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
49nC @ 10V
Input Capacitance (ciss) @ Vds
1400pF @ 25V
Power - Max
170W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Transistor Polarity
N Channel
Continuous Drain Current Id
9.2A
Drain Source Voltage Vds
600V
On Resistance Rds(on)
750mohm
Rds(on) Test Voltage Vgs
10V
Leaded Process Compatible
Yes
Configuration
Single
Resistance Drain-source Rds (on)
0.75 Ohms
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
9.2 A
Power Dissipation
170 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
c. I
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91287
S10-2433-Rev. B, 25-Oct-10
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
DS
DS(on)
g
gs
gd
SD
(Max.) (nC)
(nC)
(V)
(nC)
 9.2 A, dI/dt  50 A/μs, V
G D
()
D
J
S
2
= 25 °C, L = 6.8 mH, R
PAK (TO-263)
a
c
a
a
DD
b
V
 V
GS
g
= 10 V
= 25 , I
DS
, T
G
J
Single
N-Channel MOSFET
 150 °C.
600
49
13
20
D
SiHFS9N60A-GE3
IRFS9N60APbF
SiHFS9N60A-E3
IRFS9N60A
SiHFS9N60A
AS
2
PAK (TO-263)
= 9.2 A (see fig. 12).
C
D
S
= 25 °C, unless otherwise noted)
Power MOSFET
V
0.75
GS
at 10 V
T
for 10 s
C
= 25 °C
T
T
C
C
= 100 °C
= 25 °C
FEATURES
• Halogen-free According to IEC 61249-2-21
• Low Gate Charge Q
• Improved Gate, Avalanche and Dynamic dV/dt
• Fully Characterized Capacitance and Avalanche Voltage
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High Speed Power Switching
APPLICABLE OFF LINE SMPS TOPOLOGIES
• Active Clamped Forward
• Main Switch
Definition
Requirement
Ruggedness
and Current
D
SiHFS9N60ATRR-GE3
IRFS9N60ATRRPbF
SiHFS9N60ATR-E3
IRFS9N60ATRR
SiHFS9N60ATR
2
PAK (TO-263)
SYMBOL
T
IRFS9N60A, SiHFS9N60A
dV/dt
J
V
V
E
E
I
I
, T
P
DM
I
AR
GS
DS
AS
AR
D
D
stg
a
a
a
a
g
a
results in Simple Drive
- 55 to + 150
LIMIT
300
± 30
600
290
170
9.2
5.8
1.3
9.2
5.0
D
SiHFS9N60ATRL-GE3
IRFS9N60ATRLPbF
SiHFS9N60ATL-E3
IRFS9N60ATRL
SiHFS9N60ATL
37
17
2
PAK (TO-263)
Vishay Siliconix
d
www.vishay.com
a
a
a
UNIT
W/°C
a
V/ns
mJ
mJ
°C
W
V
A
A
a
1

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IRFS9N60ATRRPBF Summary of contents

Page 1

... Uninterruptible Power Supply • High Speed Power Switching G APPLICABLE OFF LINE SMPS TOPOLOGIES • Active Clamped Forward • Main Switch S N-Channel MOSFET PAK (TO-263) D PAK (TO-263) SiHFS9N60A-GE3 SiHFS9N60ATRR-GE3 IRFS9N60APbF IRFS9N60ATRRPbF SiHFS9N60A-E3 SiHFS9N60ATR-E3 IRFS9N60A IRFS9N60ATRR SiHFS9N60A SiHFS9N60ATR = 25 °C, unless otherwise noted ° 100 °C ...

Page 2

... IRFS9N60A, SiHFS9N60A Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic ...

Page 3

... Fig Normalized On-Resistance vs. Temperature IRFS9N60A, SiHFS9N60A Vishay Siliconix ° 150 C J ° 50V DS 20µs PULSE WIDTH 5.0 6.0 7.0 8.0 9 Gate-to-Source Voltage (V) GS Fig Typical Transfer Characteristics 9 ...

Page 4

... IRFS9N60A, SiHFS9N60A Vishay Siliconix 2400 1MHz iss rss gd 2000 oss ds gd iss 1600 oss 1200 800 rss 400 Drain-to-Source Voltage (V) DS Fig Typical Capacitance vs. Drain-to-Source Voltage 9. FOR TEST CIRCUIT SEE FIGURE Total Gate Charge (nC) G Fig Typical Gate Charge vs. Gate-to-Source Voltage www ...

Page 5

... Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91287 S10-2433-Rev. B, 25-Oct-10 125 150 ° 1. Duty factor Peak 0.001 0. Rectangular Pulse Duration (sec Driver + - IRFS9N60A, SiHFS9N60A Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit V DS ...

Page 6

... IRFS9N60A, SiHFS9N60A Vishay Siliconix Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 600 TOP 500 BOTTOM 400 300 200 100 100 Starting T , Junction Temperature ( C) J Fig. 12c - Maximum Avalanche Energy vs. Drain Current I D 4.1A 5.8A 9.2A 125 150 ° Current regulator Same type as D.U.T. 50 kΩ ...

Page 7

... Note Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91287. Document Number: 91287 S10-2433-Rev ...

Page 8

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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