IRF634 Vishay, IRF634 Datasheet
IRF634
Specifications of IRF634
IRF634
IRF634IR
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IRF634 Summary of contents
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... C SYMBOL ° 100 ° °C C dV/dt T for screw = 25 8.1 A (see fig. 12 150 °C. J This datasheet is subject to change without notice. IRF634, SiHF634 Vishay Siliconix RoHS* COMPLIANT device design, low on-resistance LIMIT UNIT V 250 ± 8 5 0.59 W/° ...
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... IRF634, SiHF634 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance ...
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... C 3.0 2.5 2.0 1.5 4.5 V 1.0 0.5 150 °C 0 91034_04 = 150 °C Fig Normalized On-Resistance vs. Temperature C This datasheet is subject to change without notice. IRF634, SiHF634 Vishay Siliconix ° 150 C ° µs Pulse Width Gate-to-Source Voltage ( Fig Typical Transfer Characteristics I = 5.6 A ...
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... IRF634, SiHF634 Vishay Siliconix 1750 MHz iss rss gd 1400 oss ds 1050 C iss 700 C oss 350 C rss Drain-to-Source Voltage ( 91034_05 Fig Typical Capacitance vs. Drain-to-Source Voltage 5 200 125 Total Gate Charge (nC) 91034_06 G Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT ...
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... THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Fig. 10a - Switching Time Test Circuit 125 150 Fig. 10b - Switching Time Waveforms - 0 Rectangular Pulse Duration (s) 1 This datasheet is subject to change without notice. IRF634, SiHF634 Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0 ...
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... IRF634, SiHF634 Vishay Siliconix Vary t to obtain p required I AS D.U 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit 91034_12c Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT ...
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... D.U.T. - device under test P.W. Period D = Period P.W. waveform SD Body diode forward current dI/dt waveform DS Diode recovery dV/dt Body diode forward drop Ripple ≤ for logic level devices GS Fig For N-Channel This datasheet is subject to change without notice. IRF634, SiHF634 Vishay Siliconix + + www.vishay.com www.vishay.com/doc?91000 7 ...
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