MOSFET N-CH 250V 8.1A TO-220AB

IRF634

Manufacturer Part NumberIRF634
DescriptionMOSFET N-CH 250V 8.1A TO-220AB
ManufacturerVishay
IRF634 datasheet
 

Specifications of IRF634

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs450 mOhm @ 5.1A, 10VDrain To Source Voltage (vdss)250V
Current - Continuous Drain (id) @ 25° C8.1AVgs(th) (max) @ Id4V @ 250µA
Gate Charge (qg) @ Vgs41nC @ 10VInput Capacitance (ciss) @ Vds770pF @ 25V
Power - Max74WMounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)Transistor PolarityN Channel
Continuous Drain Current Id8.1ADrain Source Voltage Vds250V
On Resistance Rds(on)450mohmRds(on) Test Voltage Vgs10V
Threshold Voltage Vgs Typ4VLead Free Status / RoHS StatusContains lead / RoHS non-compliant
Other names*IRF634
IRF634
IRF634IR
  
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PRODUCT SUMMARY
V
(V)
DS
R
()
V
= 10 V
DS(on)
GS
Q
(Max.) (nC)
g
Q
(nC)
gs
Q
(nC)
gd
Configuration
TO-220AB
G
S
D
G
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
a
Pulsed Drain Current
Linear Derating Factor
b
Single Pulse Avalanche Energy
a
Repetitive Avalanche Current
a
Repetitive Avalanche Energy
Maximum Power Dissipation
c
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
= 50 V, starting T
= 25 °C, L = 7.3 mH, R
DD
J
 8.1 A, dI/dt  120 A/μs, V
 V
c. I
, T
SD
DD
DS
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91034
S11-0509-B, 21-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Power MOSFET
FEATURES
• Dynamic dV/dt Rating
250
• Repetitive Avalanche Rated
0.45
• Fast Switching
41
• Ease of Paralleling
6.5
• Simple Drive Requirements
22
Single
• Compliant to RoHS Directive 2002/95/EC
D
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
S
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.
TO-220AB
IRF634PbF
SiHF634-E3
IRF634
SiHF634
= 25 °C, unless otherwise noted)
C
SYMBOL
T
= 25 °C
C
V
at 10 V
GS
T
= 100 °C
C
T
= 25 °C
C
dV/dt
T
for 10 s
6-32 or M3 screw
= 25 , I
= 8.1 A (see fig. 12).
g
AS
 150 °C.
J
This datasheet is subject to change without notice.
IRF634, SiHF634
Vishay Siliconix
RoHS*
COMPLIANT
device
design,
low
on-resistance
LIMIT
UNIT
V
250
DS
V
V
± 20
GS
8.1
I
D
5.1
A
I
32
DM
0.59
W/°C
E
300
mJ
AS
I
8.1
A
AR
E
7.4
mJ
AR
P
74
W
D
4.8
V/ns
, T
- 55 to + 150
J
stg
°C
d
300
10
lbf · in
1.1
N · m
www.vishay.com
www.vishay.com/doc?91000
Available
and
1

IRF634 Summary of contents

  • Page 1

    ... C SYMBOL ° 100 ° °C C dV/dt T for screw = 25  8.1 A (see fig. 12  150 °C. J This datasheet is subject to change without notice. IRF634, SiHF634 Vishay Siliconix RoHS* COMPLIANT device design, low on-resistance LIMIT UNIT V 250 ± 8 5 0.59 W/° ...

  • Page 2

    ... IRF634, SiHF634 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance ...

  • Page 3

    ... C 3.0 2.5 2.0 1.5 4.5 V 1.0 0.5 150 °C 0 91034_04 = 150 °C Fig Normalized On-Resistance vs. Temperature C This datasheet is subject to change without notice. IRF634, SiHF634 Vishay Siliconix ° 150 C ° µs Pulse Width Gate-to-Source Voltage ( Fig Typical Transfer Characteristics I = 5.6 A ...

  • Page 4

    ... IRF634, SiHF634 Vishay Siliconix 1750 MHz iss rss gd 1400 oss ds 1050 C iss 700 C oss 350 C rss Drain-to-Source Voltage ( 91034_05 Fig Typical Capacitance vs. Drain-to-Source Voltage 5 200 125 Total Gate Charge (nC) 91034_06 G Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT ...

  • Page 5

    ... THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Fig. 10a - Switching Time Test Circuit 125 150 Fig. 10b - Switching Time Waveforms - 0 Rectangular Pulse Duration (s) 1 This datasheet is subject to change without notice. IRF634, SiHF634 Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0 ...

  • Page 6

    ... IRF634, SiHF634 Vishay Siliconix Vary t to obtain p required I AS D.U 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit 91034_12c Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT ...

  • Page 7

    ... D.U.T. - device under test P.W. Period D = Period P.W. waveform SD Body diode forward current dI/dt waveform DS Diode recovery dV/dt Body diode forward drop Ripple ≤ for logic level devices GS Fig For N-Channel This datasheet is subject to change without notice. IRF634, SiHF634 Vishay Siliconix + + www.vishay.com www.vishay.com/doc?91000 7 ...

  • Page 8

    ... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...