IRF634 Vishay, IRF634 Datasheet - Page 3

• Manufacturer Part Number: IRF634
• Description: MOSFET N-CH 250V 8.1A TO-220AB
• Manufacturer: Vishay

Specifications of IRF634

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 450 mOhm @ 5.1A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 8.1A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 41nC @ 10V
• Input Capacitance (ciss) @ Vds: 770pF @ 25V
• Power - Max: 74W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 8.1A
• Drain Source Voltage Vds: 250V
• On Resistance Rds(on): 450mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF634; IRF634; IRF634IR

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Document Number: 91034
S11-0509-B, 21-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
91034_01
91034_02
10
10
10
10
Fig. 2 - Typical Output Characteristics, T
Fig. 1 - Typical Output Characteristics, T
1
0
10
1
0
-1
Top
Bottom
Top
Bottom
V
V
DS
DS ,
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
V
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
, Drain-to-Source Voltage (V)
GS
V
GS
Drain-to-Source Voltage (V)
10
10
0
0
20 µs Pulse Width
T
20 µs Pulse Width
T
C
C
=
=
10
10
25 °C
150 °C
1
1
This datasheet is subject to change without notice.
4.5 V
4.5 V
C
C
= 150 °C
= 25 °C
91034_03
91034_04
10
10
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Fig. 4 - Normalized On-Resistance vs. Temperature
-1
1
0
- 60 - 40 - 20 0
4
I
V
150
D
Fig. 3 - Typical Transfer Characteristics
GS
= 5.6 A
= 10 V
°
V
C
5
GS ,
T
25
J ,
°
Junction Temperature (°C)
Gate-to-Source Voltage (V)
C
6
20 40 60 80 100 120 140 160
IRF634, SiHF634
7
www.vishay.com/doc?91000
Vishay Siliconix
20 µs Pulse Width
V
DS
8
=
50 V
9
www.vishay.com
10
3