IRF634 Vishay, IRF634 Datasheet - Page 6

• Manufacturer Part Number: IRF634
• Description: MOSFET N-CH 250V 8.1A TO-220AB
• Manufacturer: Vishay

Specifications of IRF634

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 450 mOhm @ 5.1A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 8.1A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 41nC @ 10V
• Input Capacitance (ciss) @ Vds: 770pF @ 25V
• Power - Max: 74W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 8.1A
• Drain Source Voltage Vds: 250V
• On Resistance Rds(on): 450mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF634; IRF634; IRF634IR

IRF634, SiHF634
Vishay Siliconix
www.vishay.com
6
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Vary t
required I
p
Fig. 12a - Unclamped Inductive Test Circuit
to obtain
10 V
Fig. 13a - Basic Gate Charge Waveform
AS
V
G
R
10 V
G
Q
V
DS
GS
t
p
Charge
Q
I
Q
AS
GD
D.U.T
G
0.01 Ω
L
91034_12c
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
400
700
600
500
300
200
100
This datasheet is subject to change without notice.
0
+
25
-
V
V
DD
DD
Starting T
= 50 V
50
A
J
, Junction Temperature (°C)
75
100
Top
Bottom
125
Fig. 12b - Unclamped Inductive Waveforms
V
I
AS
12 V
DS
Fig. 13b - Gate Charge Test Circuit
V
3.6 A
5.1 A
8.1 A
GS
I
Same type as D.U.T.
D
150
Current regulator
0.2 µF
Current sampling resistors
3 mA
50 kΩ
0.3 µF
t
p
I
G
www.vishay.com/doc?91000
Document Number: 91034
D.U.T.
V
S11-0509-B, 21-Mar-11
I
D
DS
+
-
V
V
DD
DS