IRFL9110TR Vishay, IRFL9110TR Datasheet
IRFL9110TR
Specifications of IRFL9110TR
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IRFL9110TR Summary of contents
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... °C A for Ω 4.4 A (see fig. 12 ≤ 150 ° IRFL9110, SiHFL9110 Vishay Siliconix device design, low on-resistance package design allows for easy SOT-223 a IRFL9110TRPbF a SiHFL210T-E3 a IRFL9110TR a SiHFL9110T SYMBOL LIMIT V - 100 DS V ± 1 0. 8.8 DM 0.025 0.017 E 100 1 0. 2.0 dV/ ...
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... IRFL9110, SiHFL9110 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage ...
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... TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig Typical Output Characteristics Fig Typical Output Characteristics Document Number: 91196 S-81369-Rev. A, 07-Jul-08 IRFL9110, SiHFL9110 Vishay Siliconix Fig Typical Transfer Characteristics Fig Normalized On-Resistance vs. Temperature www.vishay.com 3 ...
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... IRFL9110, SiHFL9110 Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 91196 S-81369-Rev. A, 07-Jul-08 ...
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... Fig Maximum Drain Current vs. Case Temperature Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91196 S-81369-Rev. A, 07-Jul-08 IRFL9110, SiHFL9110 Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit d(on) r d(off Fig. 10b - Switching Time Waveforms www ...
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... IRFL9110, SiHFL9110 Vishay Siliconix Vary t to obtain p required I AS D.U. 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com Fig. 12c - Maximum Avalanche Energy vs. Drain Current Fig. 12b - Unclamped Inductive Waveforms Current regulator Same type as D.U.T. ...
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... V Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91196. ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...