IRF730A Vishay, IRF730A Datasheet

MOSFET N-CH 400V 5.5A TO-220AB

IRF730A

Manufacturer Part Number
IRF730A
Description
MOSFET N-CH 400V 5.5A TO-220AB
Manufacturer
Vishay
Datasheet

Specifications of IRF730A

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1 Ohm @ 3.3A, 10V
Drain To Source Voltage (vdss)
400V
Current - Continuous Drain (id) @ 25° C
5.5A
Vgs(th) (max) @ Id
4.5V @ 250µA
Gate Charge (qg) @ Vgs
22nC @ 10V
Input Capacitance (ciss) @ Vds
600pF @ 25V
Power - Max
74W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1 Ohms
Drain-source Breakdown Voltage
400 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
5.5 A
Power Dissipation
74 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF730A

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Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
c. I
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91045
S-83000-Rev. A, 19-Jan-09
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
DS
DS(on)
g
gs
gd
SD
(Max.) (nC)
(nC)
(nC)
(V)
≤ 5.5 A, dI/dt ≤ 90 A/µs, V
(Ω)
TO-220
J
= 25 °C, L = 19 mH, R
G
a
D
S
c
a
a
DD
b
V
≤ V
GS
G
= 25 Ω, I
= 10 V
DS
G
, T
N-Channel MOSFET
J
Single
≤ 150 °C.
400
5.8
9.3
22
AS
= 5.5 A (see fig. 12).
D
S
C
Power MOSFET
= 25 °C, unless otherwise noted
V
1.0
GS
6-32 or M3 screw
at 10 V
T
for 10 s
C
= 25 °C
T
T
C
C
TO-220
IRF730APbF
SiHF730A-E3
IRF730A
SiHF730A
= 100 °C
= 25 °C
FEATURES
• Low Gate Charge Q
• Improved Gate, Avalanche and Dynamic dV/dt
• Fully Characterized Capacitance and Avalanche Voltage
• Effective Coss Specified
• Lead (Pb)-free Available
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High Speed Power Switching
TYPICAL SMPS TOPOLOGIES
• Single Transistor Flyback Xfmr. Reset
• Single Transistor Forward Xfmr. Reset (Both US Line Input
Requirement
Ruggedness
and Current
Only)
SYMBOL
T
dV/dt
J
V
V
E
E
I
I
P
, T
I
DM
AR
DS
GS
AS
AR
D
D
stg
IRF730A, SiHF730A
g
results in Simple Drive
- 55 to + 150
LIMIT
300
± 30
400
290
5.5
3.5
0.6
5.5
7.4
4.6
1.1
22
74
10
Vishay Siliconix
d
www.vishay.com
lbf · in
UNIT
W/°C
N · m
V/ns
RoHS*
COMPLIANT
mJ
mJ
°C
W
V
A
A
Available
1

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IRF730A Summary of contents

Page 1

... Only) TO-220 IRF730APbF SiHF730A-E3 IRF730A SiHF730A = 25 °C, unless otherwise noted ° 100 ° °C C for screw = 5.5 A (see fig. 12). AS ≤ 150 °C. J IRF730A, SiHF730A Vishay Siliconix results in Simple Drive g SYMBOL LIMIT V 400 DS V ± 5 3 0.6 E 290 ...

Page 2

... IRF730A, SiHF730A Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Case (Drain) Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Ambient SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance ...

Page 3

... Pulse Width 0 Drain-to-Source Voltage ( 91045_02 Fig Typical Output Characteristics Document Number: 91045 S-83000-Rev. A, 19-Jan-09 4 ° 91045_03 4 150 ° 91045_04 Fig Normalized On-Resistance vs. Temperature IRF730A, SiHF730A Vishay Siliconix 2 10 ° 150 C J ° µs Pulse Width 0.1 4.0 5.0 6.0 7.0 8.0 9.0 ...

Page 4

... IRF730A, SiHF730A Vishay Siliconix MHz iss rss oss Drain-to-Source Voltage ( 91045_05 Fig Typical Capacitance vs. Drain-to-Source Voltage 5 320 200 Total Gate Charge (nC) 91045_06 G Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com Shorted iss C oss C rss 91045_07 Fig Typical Source-Drain Diode Forward Voltage For test circuit ...

Page 5

... Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91045 S-83000-Rev. A, 19-Jan-09 125 150 Single Pulse (Thermal Response Rectangular Pulse Duration ( Driver + - IRF730A, SiHF730A Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit ...

Page 6

... IRF730A, SiHF730A Vishay Siliconix 700 600 500 400 300 200 100 100 50 Starting T , Junction Temperature (°C) 91045_12c J Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com Top 2.5 A 3.5 A Bottom 5.5 A 125 150 91045_12d 610 ...

Page 7

... SD • D.U.T. - device under test P.W. Period D = Period P.W. waveform SD Body diode forward current dI/dt waveform DS Diode recovery dV/dt Body diode forward drop Ripple ≤ for logic level devices Fig For N-Channel IRF730A, SiHF730A Vishay Siliconix + + www.vishay.com 7 ...

Page 8

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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