MOSFET N-CH 500V 6.5A TO-220F

FDPF8N50NZU

Manufacturer Part NumberFDPF8N50NZU
DescriptionMOSFET N-CH 500V 6.5A TO-220F
ManufacturerFairchild Semiconductor
SeriesUniFET-II™
FDPF8N50NZU datasheet
 


Specifications of FDPF8N50NZU

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs1.2 Ohm @ 4A, 10VDrain To Source Voltage (vdss)500V
Current - Continuous Drain (id) @ 25° C6.5AVgs(th) (max) @ Id5V @ 250µA
Gate Charge (qg) @ Vgs18nC @ 10VInput Capacitance (ciss) @ Vds735pF @ 25V
Power - Max40WMounting TypeThrough Hole
Package / CaseTO-220-3 Full PackTransistor PolarityN-Channel
Resistance Drain-source Rds (on)1 OhmForward Transconductance Gfs (max / Min)6.3 S
Drain-source Breakdown Voltage500 VContinuous Drain Current3.9 A to 6.5 A
Power Dissipation40 WMaximum Operating Temperature+ 150 C
Mounting StyleThrough HoleGate Charge Qg14 nC
Minimum Operating Temperature- 55 CLead Free Status / RoHS StatusLead free / RoHS Compliant
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FDP8N50NZU / FDPF8N50NZU
N-Channel MOSFET
500V, 6.5A, 1.2
Features
• R
= 1.0 ( Typ.) @ V
= 10V, I
DS(on)
GS
• Low Gate Charge ( Typ. 14nC)
• Low C
( Typ. 5pF)
rss
• Fast Switching
• 100% Avalanche Tested
• Improve dv/dt Capability
• ESD Improved Capability
• RoHS Compliant
TO-220
G D S
FDP Series
MOSFET Maximum Ratings
Symbol
V
Drain to Source Voltage
DSS
V
Gate to Source Voltage
GSS
I
Drain Current
D
I
Drain Current
DM
E
Single Pulsed Avalanche Energy
AS
I
Avalanche Current
AR
E
Repetitive Avalanche Energy
AR
dv/dt
Peak Diode Recovery dv/dt
P
Power Dissipation
D
T
, T
Operating and Storage Temperature Range
J
STG
Maximum Lead Temperature for Soldering Purpose,
T
L
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
R
Thermal Resistance, Junction to Case
JC
R
Thermal Resistance, Case to Sink Typ.
CS
R
Thermal Resistance, Junction to Ambient
JA
©2010 Fairchild Semiconductor Corporation
FDP8N50NZU / FDPF8N50NZU Rev. A
Description
= 3.25A
This N-Channel enhancement mode power field effect transistors
D
are prod uced using F airchild's pro prietary, planar str ipe, DMOS
technology.
This advance t
minimize on-st ate r esistance, provide super
performance, and withst and high energy pulse in the avalanch e
and commutation mode. The se devices are well suit ed for hig h
efficient switching mode pow er supplies and active p ower factor
correction.
TO-220F
G
D
S
FDPF Series
(potted)
o
T
= 25
C unless otherwise noted
C
Parameter
o
-Continuous (T
= 25
C)
C
o
-Continuous (T
= 100
C)
C
- Pulsed
o
(T
= 25
C)
C
o
- Derate above 25
C
Parameter
1
February 2010
UniFET-II
echnology ha s been
especially t ailored to
ior switchin g
D
D
G
G
S
S
FDP8N50NZU FDPF8N50NZU
500
±25
6.5
6.5*
3.9
3.9*
(Note 1)
26
26*
(Note 2)
80
(Note 1)
6.5
(Note 1)
13
(Note 3)
20
130
40
1
0.32
-55 to +150
300
FDP8N50NZU FDPF8N50NZU Units
0.96
3.1
0.5
-
62.5
62.5
www.fairchildsemi.com
TM
tm
Units
V
V
A
A
mJ
A
mJ
V/ns
W
o
W/
C
o
C
o
C
o
C/W

FDPF8N50NZU Summary of contents

  • Page 1

    ... R Thermal Resistance, Case to Sink Typ. CS R Thermal Resistance, Junction to Ambient JA ©2010 Fairchild Semiconductor Corporation FDP8N50NZU / FDPF8N50NZU Rev. A Description = 3.25A This N-Channel enhancement mode power field effect transistors D are prod uced using F airchild's pro prietary, planar str ipe, DMOS technology. This advance t ...

  • Page 2

    ... Starting 6.5A, di/dt  200A/s, V  Starting DSS 4. Pulse Test: Pulse width  300s, Duty Cycle  Essentially Independent of Operating Temperature Typical Characteristics FDP8N50NZU / FDPF8N50NZU Rev. A Package Reel Size TO-220 - TO-220F - unless otherwise noted C Test Conditions I = 250 ...

  • Page 3

    ... I , Drain Current [A] D Figure 5. Capacitance Characteristics 1200 C iss = oss = oss C rss = C gd 900 C iss 600 300 C rss 0 0 Drain-Source Voltage [V] DS FDP8N50NZU / FDPF8N50NZU Rev. A Figure 2. Transfer Characteristics *Notes:  1. 250 s Pulse Test 0 Figure 4. Body Diode Forward Voltage 100 20V GS o *Note: T ...

  • Page 4

    ... Case Temperature Case Temperature [˚C] C  Figure 11. Transient Thermal Response Curve-FDPF8N50NZU  5 0.5 1 0.2 0.1 0.05 0.1 0.02 0.01 Single pulse 0. FDP8N50NZU / FDPF8N50NZU Rev. A (Continued) Figure 8 ...

  • Page 5

    ... FDP8N50NZU / FDPF8N50NZU Rev. A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...

  • Page 6

    ... FDP8N50NZU / FDPF8N50NZU Rev. A Peak Diode Recovery dv/dt Test Circuit & Waveforms + + • • • I • www.fairchildsemi.com ...

  • Page 7

    ... Mechanical Dimensions FDP8N50NZU / FDPF8N50NZU Rev. A TO-220 7 www.fairchildsemi.com ...

  • Page 8

    ... Package Dimensions * Front/Back Side Isolation Voltage : AC 2500V FDP8N50NZU / FDPF8N50NZU Rev. A TO-220F 8 Dimensions in Millimeters www.fairchildsemi.com ...

  • Page 9

    ... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDP8N50NZU / FDPF8N50NZU Rev. A FPS™ PowerTrench F-PFS™ PowerXS™ ® FRFET Programmable Active Droop™ SM ® Global Power Resource QFET Green FPS™ ...