FDPF8N50NZU Fairchild Semiconductor, FDPF8N50NZU Datasheet - Page 4

• Manufacturer Part Number: FDPF8N50NZU
• Description: MOSFET N-CH 500V 6.5A TO-220F
• Manufacturer: Fairchild Semiconductor
• Series: UniFET-II™r

Specifications of FDPF8N50NZU

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.2 Ohm @ 4A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 6.5A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 18nC @ 10V
• Input Capacitance (ciss) @ Vds: 735pF @ 25V
• Power - Max: 40W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1 Ohm
• Forward Transconductance Gfs (max / Min): 6.3 S
• Drain-source Breakdown Voltage: 500 V
• Continuous Drain Current: 3.9 A to 6.5 A
• Power Dissipation: 40 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Gate Charge Qg: 14 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDP8N50NZU / FDPF8N50NZU Rev. A
Typical Performance Characteristics
vs. Case Temperature
Figure 7. Breakdown Voltage Variation
Figure 9. Maximum Drain Current
1.2
1.1
1.0
0.9
0.8
8
7
6
5
4
3
2
1
0
25
-100
50
vs. Temperature
-50
T
J
, Junction Temperature
 Figure 11. Transient Thermal Response Curve-FDPF8N50NZU 
T
C
, Case Temperature [˚C]
0.01
0.1
75
0
1
5
10
0.5
0.05
0.2
0.02
0.01
Single pulse
-5
0.1
50
100
10
-4
*Notes:
1. V
2. I
[
o
100
C
D
]
GS
125
10
= 250
= 0V
-3
Rectangular Pulse Duration [sec]

A
150
10
150
(Continued)
-2
10
-1
4
Figure 8. Maximum Safe Operating Area
10
10
10
10
10
-1
-2
0
1
0
10
0
*Notes:
P
1. Z
2. Duty Factor, D= t
3. T
DM
? N otes :
1. T
2. T
3. Single Pulse

JM
JC
10
C
J
Operation in This Area
is Limited by R
= 150
= 25
- T
(t) = 3.1
- FDPF8N50NZU
1
o
C
C
o
C
t
1
= P
V
t
2
DS
o
DM
, Drain-Source Voltage [V]
DS(on)
10
C/W Max.
10
1
* Z
2
1

/t
JC
2
(t)
10
DC
3
100 ms
10
10 ms
2
1 ms
100
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
s
10

s
10
3