MOSFET P-CH 200V 3.6A DPAK

IRFR9220TRR

Manufacturer Part NumberIRFR9220TRR
DescriptionMOSFET P-CH 200V 3.6A DPAK
ManufacturerVishay
IRFR9220TRR datasheet
 

Specifications of IRFR9220TRR

Fet TypeMOSFET P-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs1.5 Ohm @ 2.2A, 10VDrain To Source Voltage (vdss)200V
Current - Continuous Drain (id) @ 25° C3.6AVgs(th) (max) @ Id4V @ 250µA
Gate Charge (qg) @ Vgs20nC @ 10VInput Capacitance (ciss) @ Vds340pF @ 25V
Power - Max2.5WMounting TypeSurface Mount
Package / CaseDPak, TO-252 (2 leads+tab), SC-63Lead Free Status / RoHS StatusContains lead / RoHS non-compliant
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PRODUCT SUMMARY
V
(V)
DS
R
(Ω)
V
= - 10 V
DS(on)
GS
Q
(Max.) (nC)
g
Q
(nC)
gs
Q
(nC)
gd
Configuration
DPAK
IPAK
(TO-252)
(TO-251)
D
D
S
G
D S
G
ORDERING INFORMATION
Package
DPAK (TO-252)
IRFR9220PbF
Lead (Pb)-free
SiHFR9220-E3
IRFR9220
SnPb
SiHFR9220
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
a
Pulsed Drain Current
Linear Derating Factor
e
Linear Derating Factor (PCB Mount)
b
Single Pulse Avalanche Energy
a
Repetitive Avalanche Current
a
Repetitive Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)
c
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
= - 50 V, Starting T
= 25 °C, L = 35 mH, R
DD
J
≤ - 3.9 A, dI/dt ≤ 95 A/µs, V
≤ V
c. I
SD
DD
DS
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91283
S-82992-Rev. B, 12-Jan-09
IRFR9220, IRFU9220, SiHFR9220, SiHFU9220
Power MOSFET
FEATURES
• Dynamic dV/dt Rating
- 200
• Repetitive Avalanche Rated
1.5
• Surface Mount (IRFR9220, SiHFR9220)
20
• Straight Lead (IRFUFU9220, SiHFU9220)
3.3
• Available in Tape and Reel
11
• P-Channel
Single
• Fast Switching
S
• Lead (Pb)-free Available
DESCRIPTION
G
Third Power MOSFETs technology is the key to Vishay
advanced line of Power MOSFET transistors. The efficient
geometry and unique processing of the Power MOSFETs
design achieve very low on-state resistance combined with
high transconductance and extreme device ruggedness.
The DPAK is designed for surface mounting using vapor
D
phase, infrared, or wave soldering techniques. The straight
P-Channel MOSFET
lead version (IRFU, SiHFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
DPAK (TO-252)
DPAK (TO-252)
a
IIRFR9220TRLPbF
IRFR9220TRRPbF
a
SiHFR9220TL-E3
SiHFR9220TR-E3
a
IRFR9220TRL
IRFR9220TRR
a
SiHFR9220TL
SiHFR9220TR
= 25 °C, unless otherwise noted
C
T
= 25 °C
C
V
at - 10 V
GS
T
= 100 °C
C
T
= 25 °C
C
e
T
= 25 °C
A
for 10 s
= 25 Ω, I
= - 3.6 A (see fig. 12).
G
AS
≤ 150 °C.
, T
J
Vishay Siliconix
DPAK (TO-252)
IPAK (TO-251)
a
a
IRFR9220TRPbF
IRFU9220PbF
a
a
SiHFR9220T-E3
SiHFU9220-E3
a
a
IRFR9220TR
IRFU9220
a
a
SiHFR9220T
SiHFU9220
SYMBOL
LIMIT
V
- 200
DS
V
± 20
GS
- 3.6
I
D
- 2.3
I
- 14
DM
0.33
0.020
E
310
AS
I
- 3.6
AR
E
4.2
AR
42
P
D
2.5
dV/dt
- 5.0
T
, T
- 55 to + 150
J
stg
d
260
www.vishay.com
Available
RoHS*
COMPLIANT
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
1

IRFR9220TRR Summary of contents

  • Page 1

    ... P-Channel MOSFET lead version (IRFU, SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications. DPAK (TO-252) DPAK (TO-252) a IIRFR9220TRLPbF IRFR9220TRRPbF a SiHFR9220TL-E3 SiHFR9220TR-E3 a IRFR9220TRL IRFR9220TRR a SiHFR9220TL SiHFR9220TR = 25 °C, unless otherwise noted ° 100 °C ...

  • Page 2

    ... IRFR9220, IRFU9220, SiHFR9220, SiHFU9220 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...

  • Page 3

    ... TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig Typical Output Characteristics, T Fig Typical Output Characteristics, T Document Number: 91283 S-82992-Rev. B, 12-Jan-09 IRFR9220, IRFU9220, SiHFR9220, SiHFU9220 = 25 ° 150 °C Fig Normalized On-Resistance vs. Temperature C Vishay Siliconix Fig Typical Transfer Characteristics www.vishay.com 3 ...

  • Page 4

    ... IRFR9220, IRFU9220, SiHFR9220, SiHFU9220 Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 91283 S-82992-Rev. B, 12-Jan-09 ...

  • Page 5

    ... Fig Maximum Drain Current vs. Case Temperature Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91283 S-82992-Rev. B, 12-Jan-09 IRFR9220, IRFU9220, SiHFR9220, SiHFU9220 Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit d(on) r d(off) ...

  • Page 6

    ... IRFR9220, IRFU9220, SiHFR9220, SiHFU9220 Vishay Siliconix D.U. 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com Driver 15 V Fig. 12c - Maximum Avalanche Energy vs. Drain Current Fig. 12b - Unclamped Inductive Waveforms Current regulator Same type as D.U.T. ...

  • Page 7

    ... Inductor current * V Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91283. ...

  • Page 8

    ... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...