IRF9640 Vishay, IRF9640 Datasheet

MOSFET P-CH 200V 11A TO-220AB

IRF9640

Manufacturer Part Number
IRF9640
Description
MOSFET P-CH 200V 11A TO-220AB
Manufacturer
Vishay
Datasheet

Specifications of IRF9640

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
500 mOhm @ 6.6A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
11A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
44nC @ 10V
Input Capacitance (ciss) @ Vds
1200pF @ 25V
Power - Max
125W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF9640
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91086
S-81272-Rev. A, 16-Jun-08
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
DS
DS(on)
g
gs
gd
SD
DD
(Max.) (nC)
(nC)
(nC)
(V)
≤ - 11 A, dI/dt ≤ 150 A/µs, V
= - 50 V, starting T
(Ω)
TO-220
a
G
J
D
= 25 °C, L = 8.7 mH, R
S
c
a
a
V
b
GS
DD
= - 10 V
≤ V
G
DS
, T
P-Channel MOSFET
Single
- 200
J
7.1
44
27
≤ 150 °C.
G
D
S
= 25 Ω, I
C
V
Power MOSFET
0.50
= 25 °C, unless otherwise noted
GS
at - 10 V
6-32 or M3 screw
AS
T
= - 11 A (see fig. 12).
for 10 s
C
= 25 °C
T
T
C
TO-220
IRF9640PbF
SiHF9640-E3
IRF9640
SiHF9640
C
= 100 °C
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• P-Channel
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
= 25 °C
SYMBOL
T
dV/dt
J
V
V
E
E
device
I
I
P
, T
DM
I
AR
DS
GS
AS
AR
D
D
stg
design,
IRF9640, SiHF9640
- 55 to + 150
LIMIT
- 200
300
± 20
- 6.8
- 5.0
- 11
- 44
700
- 11
125
1.0
1.1
13
10
low
d
Vishay Siliconix
on-resistance
www.vishay.com
lbf · in
UNIT
W/°C
N · m
V/ns
RoHS*
COMPLIANT
mJ
mJ
°C
W
V
V
A
A
Available
and
1

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IRF9640 Summary of contents

Page 1

... P-Channel MOSFET TO-220 IRF9640PbF SiHF9640-E3 IRF9640 SiHF9640 = 25 °C, unless otherwise noted ° 100 ° °C C for screw = 25 Ω (see fig. 12 ≤ 150 ° IRF9640, SiHF9640 Vishay Siliconix device design, low on-resistance SYMBOL LIMIT V - 200 DS V ± 6 1.0 E 700 ...

Page 2

... IRF9640, SiHF9640 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance ...

Page 3

... TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig Typical Output Characteristics, T Fig Typical Output Characteristics, T Document Number: 91086 S-81272-Rev. A, 16-Jun- °C Fig Typical Transfer Characteristics C Fig Normalized On-Resistance vs. Temperature = 150 °C C IRF9640, SiHF9640 Vishay Siliconix www.vishay.com 3 ...

Page 4

... IRF9640, SiHF9640 Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Drain-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 91086 S-81272-Rev. A, 16-Jun-08 ...

Page 5

... Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case D.U 0.01 Ω p Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91086 S-81272-Rev. A, 16-Jun- Fig. 12b - Unclamped Inductive Waveforms IRF9640, SiHF9640 Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit t t ...

Page 6

... IRF9640, SiHF9640 Vishay Siliconix Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 Current regulator Same type as D.U.T. 50 kΩ 0.2 µF 0.3 µ D.U. Current sampling resistors Fig. 13b - Gate Charge Test Circuit Document Number: 91086 ...

Page 7

... SD • D.U.T. - device under test Period D = Period P.W. waveform SD Body diode forward current dI/dt waveform DS Diode recovery dV/dt Body diode forward drop Ripple ≤ for logic level and - 3 V drive devices GS Fig For P-Channel IRF9640, SiHF9640 Vishay Siliconix + + P. www.vishay.com 7 ...

Page 8

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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