MOSFET N-CH 250V 51A TO-220F

FDPF51N25

Manufacturer Part NumberFDPF51N25
DescriptionMOSFET N-CH 250V 51A TO-220F
ManufacturerFairchild Semiconductor
SeriesUniFET™
FDPF51N25 datasheet
 


Specifications of FDPF51N25

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs60 mOhm @ 25.5A, 10VDrain To Source Voltage (vdss)250V
Current - Continuous Drain (id) @ 25° C51AVgs(th) (max) @ Id5V @ 250µA
Gate Charge (qg) @ Vgs70nC @ 10VInput Capacitance (ciss) @ Vds3410pF @ 25V
Power - Max38WMounting TypeThrough Hole
Package / CaseTO-220-3 Full Pack (Straight Leads)ConfigurationSingle
Transistor PolarityN-ChannelResistance Drain-source Rds (on)0.06 Ohms
Forward Transconductance Gfs (max / Min)43 SDrain-source Breakdown Voltage250 V
Gate-source Breakdown Voltage+/- 30 VContinuous Drain Current28 A
Power Dissipation38 WMaximum Operating Temperature+ 150 C
Mounting StyleThrough HoleMinimum Operating Temperature- 55 C
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
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FDP51N25 / FDPF51N25
250V N-Channel MOSFET
Features
• 51A, 250V, R
= 0.06Ω @V
DS(on)
GS
• Low gate charge ( typical 55 nC)
• Low Crss ( typical 63 pF)
• Fast switching
• Improved dv/dt capability
TO-220
G
D
S
FDP Series
Absolute Maximum Ratings
Symbol
V
Drain-Source Voltage
DSS
I
Drain Current
D
I
Drain Current
DM
V
Gate-Source voltage
GSS
E
Single Pulsed Avalanche Energy
AS
I
Avalanche Current
AR
E
Repetitive Avalanche Energy
AR
dv/dt
Peak Diode Recovery dv/dt
P
Power Dissipation
D
T
T
Operating and Storage Temperature Range
J,
STG
T
Maximum Lead Temperature for Soldering Purpose,
L
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
R
Thermal Resistance, Junction-to-Case
θJC
R
Thermal Resistance, Case-to-Sink Typ.
θCS
R
Thermal Resistance, Junction-to-Ambient
θJA
©2008 Fairchild Semiconductor Corporation
FDP51N25 / FDPF51N25 Rev. B
Description
= 10 V
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
TO-220F
G
D
S
FDPF Series
Parameter
- Continuous (T
= 25°C)
C
- Continuous (T
= 100°C)
C
- Pulsed
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
(T
= 25°C)
C
- Derate above 25°C
Parameter
1
July 2008
UniFET
D
G
S
FDP51N25
FDPF51N25
Unit
250
51
51*
30
30*
204
204*
± 30
1111
51
32
4.5
320
38
3.7
0.3
-55 to +150
300
FDP51N25
FDPF51N25
0.39
3.3
0.5
--
62.5
62.5
www.fairchildsemi.com
TM
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
°C/W
°C/WJ

FDPF51N25 Summary of contents

  • Page 1

    ... Thermal Resistance, Case-to-Sink Typ. θCS R Thermal Resistance, Junction-to-Ambient θJA ©2008 Fairchild Semiconductor Corporation FDP51N25 / FDPF51N25 Rev. B Description = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to ...

  • Page 2

    ... Starting ≤ 51A, di/dt ≤ 200A/μs, V ≤ Starting DSS 4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ Essentially Independent of Operating Temperature Typical Characteristics FDP51N25 / FDPF51N25 Rev. B Package Reel Size TO-220 - TO-220F - T = 25°C unless otherwise noted C Conditions 250μ ...

  • Page 3

    ... V = 10V GS 0.08 0.06 0. Drain Current [A] D Figure 5. Capacitance Characteristics 6000 C oss 4000 C iss 2000 C rss Drain-Source Voltage [V] DS FDP51N25 / FDPF51N25 Rev. B Figure 2. Transfer Characteristics Notes : 1. 250 μ s Pulse Test Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 20V Note : T ...

  • Page 4

    ... V , Drain-Source Voltage [V] DS Figure 10. Maximum Drain Current vs. Case Temperature 100 T , Case Temperature [ C FDP51N25 / FDPF51N25 Rev. B (Continued) Figure 8. On-Resistance Variation vs. Temperature 3.0 2.5 2.0 1.5 1.0 * Notes : 0 250 μ 0.0 100 150 200 -100 o C] Figure 9-2. Maximum Safe Operating Area 10 μ ...

  • Page 5

    ... Typical Performance Characteristics Figure 11-1. Transient Thermal Response Curve for FDP51N25 10 10 Figure 11-2. Transient Thermal Response Curve for FDPF51N25 FDP51N25 / FDPF51N25 Rev. B (Continued) D=0.5 -1 0.2 0.1 0.05 0.02 * Notes : -2 0.01 single pulse - Square W ave Pulse Duration [sec] 1 D=0.5 0 0.2 0.1 ...

  • Page 6

    ... Unclamped Inductive Switching Test Circuit & Waveforms FDP51N25 / FDPF51N25 Rev. B Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms 6 www.fairchildsemi.com ...

  • Page 7

    ... FDP51N25 / FDPF51N25 Rev. B Peak Diode Recovery dv/dt Test Circuit & Waveforms 7 www.fairchildsemi.com ...

  • Page 8

    ... Mechanical Dimensions FDP51N25 / FDPF51N25 Rev. B TO-220 8 Dimensions in Millimeters www.fairchildsemi.com ...

  • Page 9

    ... Mechanical Dimensions MAX1.47 0.80 ±0.10 0.35 ±0.10 2.54TYP [2.54 ] ±0.20 FDP51N25 / FDPF51N25 Rev. B (Continued) TO-220F 10.16 ø3.18 ±0.20 ±0.10 (7.00) (1.00x45°) #1 2.54TYP [2.54 ] ±0.20 9.40 ±0.20 9 2.54 ±0.20 (0.70) +0.10 0.50 2.76 ±0.20 –0.05 Dimensions in Millimeters www.fairchildsemi.com ...

  • Page 10

    ... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDP51N25 / FDPF51N25 Rev. B FPS™ PDP SPM™ F-PFS™ Power-SPM™ ® FRFET PowerTrench SM Global Power Resource Programmable Active Droop™ ...