FDPF51N25 Fairchild Semiconductor, FDPF51N25 Datasheet - Page 3

• Manufacturer Part Number: FDPF51N25
• Description: MOSFET N-CH 250V 51A TO-220F
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDPF51N25

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 60 mOhm @ 25.5A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 51A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 70nC @ 10V
• Input Capacitance (ciss) @ Vds: 3410pF @ 25V
• Power - Max: 38W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.06 Ohms
• Forward Transconductance Gfs (max / Min): 43 S
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 28 A
• Power Dissipation: 38 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDP51N25 / FDPF51N25 Rev. B
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 3. On-Resistance Variation vs.
Figure 5. Capacitance Characteristics
6000
4000
2000
0.14
0.12
0.10
0.08
0.06
0.04
10
10
10
0
2
1
0
10
10
0
-1
-1
Drain Current and Gate Voltage
Top :
Bottom : 5.5 V
10.0 V
15.0 V
8.0 V
7.0 V
6.5 V
6.0 V
25
V
GS
V
V
C
C
C
DS
DS
iss
oss
rss
, Drain-Source Voltage [V]
50
, Drain-Source Voltage [V]
V
I
10
GS
D
10
, Drain Current [A]
0
= 10V
0
75
100
C
C
C
iss
oss
rss
= C
= C
V
= C
10
GS
gs
gd
ds
* Note : T
10
1
= 20V
+ C
+ C
* Notes :
1
gd
1. 250
2. T
gd
125
(C
* Note ;
C
ds
1. V
2. f = 1 MHz
J
= 25
= 25
= shorted)
μ
s Pulse Test
GS
o
o
= 0 V
C
C
150
3
Figure 2. Transfer Characteristics
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
12
10
10
10
10
10
10
10
8
6
4
2
0
2
1
0
0
2
1
0
0.2
2
Variation vs. Source Current
0.4
and Temperatue
10
25
150
o
C
4
o
0.6
150
C
V
V
Q
o
C
SD
GS
G
25
20
, Total Gate Charge [nC]
, Source-Drain voltage [V]
, Gate-Source Voltage [V]
o
C
0.8
6
V
V
V
DS
DS
DS
1.0
30
= 50V
= 125V
= 200V
-55
o
C
8
1.2
40
* Notes :
* Notes :
1. V
2. 250
1.4
* Note : I
1. V
2. 250
GS
DS
μ
10
= 0V
s Pulse Test
μ
= 40V
s Pulse Test
50
D
= 51A
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1.6
1.8
60
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