IRL630 Vishay, IRL630 Datasheet

MOSFET N-CH 200V 9A TO-220AB

IRL630

Manufacturer Part Number
IRL630
Description
MOSFET N-CH 200V 9A TO-220AB
Manufacturer
Vishay
Datasheet

Specifications of IRL630

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
400 mOhm @ 5.4A, 5V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
9A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
40nC @ 10V
Input Capacitance (ciss) @ Vds
1100pF @ 25V
Power - Max
74W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Transistor Polarity
N Channel
Continuous Drain Current Id
9A
Drain Source Voltage Vds
200V
On Resistance Rds(on)
400mohm
Rds(on) Test Voltage Vgs
5V
Threshold Voltage Vgs Typ
2V
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRL630

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRL630
Manufacturer:
FAIRCHILD
Quantity:
12 500
Part Number:
IRL630A
Manufacturer:
IR
Quantity:
12 500
Part Number:
IRL630S
Manufacturer:
IR
Quantity:
12 500
Part Number:
IRL630SPBF
Manufacturer:
PH
Quantity:
7 209
Company:
Part Number:
IRL630STRLPBF
Quantity:
70 000
Company:
Part Number:
IRL630STRRPBF
Quantity:
70 000
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91303
S09-0058-Rev. A, 02-Feb-09
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
DS
DS(on)
g
gs
gd
SD
DD
(Max.) (nC)
(nC)
(nC)
(V)
≤ 9.0 A, dV/dt ≤ 120 A/µs, V
= 25 V, starting T
TO-220
(Ω)
G
D
a
S
J
= 25 °C, L = 4.6 mH, R
c
a
a
b
V
DD
GS
≤ V
= 5 V
G
DS
N-Channel MOSFET
, T
Single
200 V
J
5.5
40
24
≤ 150 °C.
G
D
S
= 25 Ω, I
C
Power MOSFET
0.40
= 25 °C, unless otherwise noted
V
GS
AS
6-32 or M3 screw
at 5.0 V
= 9.0 A (see fig. 12).
T
for 10 s
C
= 25 °C
T
T
C
C
TO-220
IRL630PbF
SiHL630-E3
IRL630
SiHL630
= 100 °C
= 25 °C
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Logic Level Gate Drive
• R
• 150 °C Operating Temperature
• Fast Switching
• Ease of Paralleling
• Lead (Pb)-free Available
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
DS(on)
Specified at V
SYMBOL
T
dV/dt
J
V
V
E
E
I
I
P
, T
device
I
DM
AR
DS
GS
AS
AR
D
D
stg
design,
GS
= 4 V and 5 V
- 55 to + 150
IRL630, SiHL630
LIMIT
300
± 10
0.59
200
250
9.0
5.7
9.0
7.4
5.0
1.1
36
74
10
low
Vishay Siliconix
d
on-resistance
www.vishay.com
lbf · in
UNIT
W/°C
N · m
V/ns
RoHS*
COMPLIANT
mJ
mJ
°C
W
V
A
A
Available
and
1

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IRL630 Summary of contents

Page 1

... TO-220 IRL630PbF SiHL630-E3 IRL630 SiHL630 = 25 °C, unless otherwise noted ° 5 100 ° °C C for screw = 25 Ω 9.0 A (see fig. 12 ≤ 150 ° IRL630, SiHL630 Vishay Siliconix Specified and device design, low on-resistance SYMBOL LIMIT V 200 DS V ± 9 5 0.59 E 250 ...

Page 2

... IRL630, SiHL630 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance ...

Page 3

... TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig Typical Output Characteristics, T Fig Typical Output Characteristics, T Document Number: 91303 S09-0058-Rev. A, 02-Feb- °C Fig Typical Transfer Characteristics C Fig Normalized On-Resistance vs. Temperature = 150 °C C IRL630, SiHL630 Vishay Siliconix www.vishay.com 3 ...

Page 4

... IRL630, SiHL630 Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 91303 S09-0058-Rev. A, 02-Feb-09 ...

Page 5

... Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91303 S09-0058-Rev. A, 02-Feb- Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit Fig. 10b - Switching Time Waveforms + Fig. 12b - Unclamped Inductive Waveforms IRL630, SiHL630 Vishay Siliconix D.U. d(on) r d(off ...

Page 6

... IRL630, SiHL630 Vishay Siliconix Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 Current regulator Same type as D.U.T. 50 kΩ 0.2 µF 0.3 µ D.U. Current sampling resistors Fig. 13b - Gate Charge Test Circuit Document Number: 91303 ...

Page 7

... SD • D.U.T. - device under test Period D = P.W. waveform SD Body diode forward current dI/dt waveform DS Diode recovery dV/dt Body diode forward drop Ripple ≤ for logic level devices GS Fig For N-Channel IRL630, SiHL630 Vishay Siliconix + + P.W. Period www.vishay.com 7 ...

Page 8

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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