MOSFET N-CH 200V 9A TO-220AB

IRL630

Manufacturer Part NumberIRL630
DescriptionMOSFET N-CH 200V 9A TO-220AB
ManufacturerVishay
IRL630 datasheet
 

Specifications of IRL630

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureLogic Level Gate
Rds On (max) @ Id, Vgs400 mOhm @ 5.4A, 5VDrain To Source Voltage (vdss)200V
Current - Continuous Drain (id) @ 25° C9AVgs(th) (max) @ Id2V @ 250µA
Gate Charge (qg) @ Vgs40nC @ 10VInput Capacitance (ciss) @ Vds1100pF @ 25V
Power - Max74WMounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)Transistor PolarityN Channel
Continuous Drain Current Id9ADrain Source Voltage Vds200V
On Resistance Rds(on)400mohmRds(on) Test Voltage Vgs5V
Threshold Voltage Vgs Typ2VLead Free Status / RoHS StatusContains lead / RoHS non-compliant
Other names*IRL630  
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PRODUCT SUMMARY
V
(V)
DS
R
(Ω)
V
= 5 V
DS(on)
GS
Q
(Max.) (nC)
g
Q
(nC)
gs
Q
(nC)
gd
Configuration
TO-220
G
S
D
G
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
a
Pulsed Drain Current
Linear Derating Factor
b
Single Pulse Avalanche Energy
a
Repetitive Avalanche Current
a
Repetitive Avalanche Energy
Maximum Power Dissipation
c
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
= 25 V, starting T
= 25 °C, L = 4.6 mH, R
DD
J
≤ 9.0 A, dV/dt ≤ 120 A/µs, V
≤ V
c. I
SD
DD
DS
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91303
S09-0058-Rev. A, 02-Feb-09
Power MOSFET
FEATURES
• Dynamic dV/dt Rating
200 V
• Repetitive Avalanche Rated
0.40
• Logic Level Gate Drive
40
• R
DS(on)
5.5
• 150 °C Operating Temperature
24
• Fast Switching
Single
• Ease of Paralleling
D
• Lead (Pb)-free Available
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
S
levels to approximately 50 W. The low thermal resistance
N-Channel MOSFET
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
TO-220
IRL630PbF
SiHL630-E3
IRL630
SiHL630
= 25 °C, unless otherwise noted
C
T
= 25 °C
C
V
at 5.0 V
GS
T
= 100 °C
C
T
= 25 °C
C
for 10 s
6-32 or M3 screw
= 25 Ω, I
= 9.0 A (see fig. 12).
G
AS
≤ 150 °C.
, T
J
IRL630, SiHL630
Vishay Siliconix
Specified at V
= 4 V and 5 V
GS
device
design,
low
on-resistance
SYMBOL
LIMIT
V
200
DS
V
± 10
GS
9.0
I
D
5.7
I
36
DM
0.59
E
250
AS
I
9.0
AR
E
7.4
AR
P
74
D
dV/dt
5.0
T
, T
- 55 to + 150
J
stg
d
300
10
1.1
www.vishay.com
Available
RoHS*
COMPLIANT
and
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N · m
1

IRL630 Summary of contents

  • Page 1

    ... TO-220 IRL630PbF SiHL630-E3 IRL630 SiHL630 = 25 °C, unless otherwise noted ° 5 100 ° °C C for screw = 25 Ω 9.0 A (see fig. 12 ≤ 150 ° IRL630, SiHL630 Vishay Siliconix Specified and device design, low on-resistance SYMBOL LIMIT V 200 DS V ± 9 5 0.59 E 250 ...

  • Page 2

    ... IRL630, SiHL630 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance ...

  • Page 3

    ... TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig Typical Output Characteristics, T Fig Typical Output Characteristics, T Document Number: 91303 S09-0058-Rev. A, 02-Feb- °C Fig Typical Transfer Characteristics C Fig Normalized On-Resistance vs. Temperature = 150 °C C IRL630, SiHL630 Vishay Siliconix www.vishay.com 3 ...

  • Page 4

    ... IRL630, SiHL630 Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 91303 S09-0058-Rev. A, 02-Feb-09 ...

  • Page 5

    ... Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91303 S09-0058-Rev. A, 02-Feb- Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit Fig. 10b - Switching Time Waveforms + Fig. 12b - Unclamped Inductive Waveforms IRL630, SiHL630 Vishay Siliconix D.U. d(on) r d(off ...

  • Page 6

    ... IRL630, SiHL630 Vishay Siliconix Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 Current regulator Same type as D.U.T. 50 kΩ 0.2 µF 0.3 µ D.U. Current sampling resistors Fig. 13b - Gate Charge Test Circuit Document Number: 91303 ...

  • Page 7

    ... SD • D.U.T. - device under test Period D = P.W. waveform SD Body diode forward current dI/dt waveform DS Diode recovery dV/dt Body diode forward drop Ripple ≤ for logic level devices GS Fig For N-Channel IRL630, SiHL630 Vishay Siliconix + + P.W. Period www.vishay.com 7 ...

  • Page 8

    ... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...