FDPF18N50T Fairchild Semiconductor, FDPF18N50T Datasheet

FDPF18N50T

Manufacturer Part Number

FDPF18N50T

Description

MOSFET N-CH 500V 18A TO-220F

Manufacturer

Fairchild Semiconductor

Series

UniFET™r

Datasheet

1.FDPF18N50.pdf (10 pages)

Specifications of FDPF18N50T

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

265 mOhm @ 9A, 10V

Drain To Source Voltage (vdss)

500V

Current - Continuous Drain (id) @ 25° C

18A

Vgs(th) (max) @ Id

5V @ 250µA

Gate Charge (qg) @ Vgs

60nC @ 10V

Input Capacitance (ciss) @ Vds

2860pF @ 25V

Power - Max

38.5W

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack (Straight Leads)

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.265 Ohms

Forward Transconductance Gfs (max / Min)

25 S

Drain-source Breakdown Voltage

500 V

Gate-source Breakdown Voltage

+/- 30 V

Continuous Drain Current

8 A

Power Dissipation

38.5 W

Maximum Operating Temperature

+ 150 C

Mounting Style

Through Hole

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

FDPF18N50T

Manufacturer:

Fairchild Semiconductor

Quantity:

1 882

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

FDPF18N50T

Manufacturer:

FAIRCHILD

Quantity:

12 500

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Download datasheet (467Kb)

FDP18N50 / FDPF18N50 Rev. B

FDP18N50 / FDPF18N50

500V N-Channel MOSFET

Features

• 18A, 500V, R

• Low gate charge ( typical 45 nC)

• Low C

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

Absolute Maximum Ratings

Thermal Characteristics

* Drain current limited by maximum junction temperature

dv/dt

DSS

GSS

Symbol

θJC

θCS

θJA

STG

rss

( typical 25 pF)

DS(on)

Drain-Source Voltage

Drain Current

Gate-Source voltage

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Power Dissipation

Operating and Storage Temperature Range

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

Thermal Resistance, Junction-to-Case

Thermal Resistance, Case-to-Sink Typ.

Thermal Resistance, Junction-to-Ambient

= 0.265Ω @V

TO-220

FDP Series

- Continuous (T

- Pulsed

- Derate above 25°C

= 10 V

Parameter

= 25°C)

= 100°C)

Description

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary, planar

stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the avalanche

and commutation mode. These devices are well suited for high

efficient switched mode power supplies and active power factor

correction.

(Note 1)

(Note 2)

(Note 1)

(Note 3)

TO-220F

FDPF Series

FDP18N50

10.8

1.88

235

0.53

62.5

0.5

-55 to +150

23.5

500

±30

945

300

4.5

FDPF18N50

10.8 ∗

38.5

62.5

18 *

72 ∗

0.3

3.3

UniFET

April 2007

www.fairchildsemi.com

Unit

W/°C

Unit

°C/W

V/ns

°C

Related parts for FDPF18N50T

FDPF18N50T Summary of contents

Page 1

... Thermal Resistance, Junction-to-Case θJC R Thermal Resistance, Case-to-Sink Typ. θCS R Thermal Resistance, Junction-to-Ambient θJA ©2007 Fairchild Semiconductor Corporation FDP18N50 / FDPF18N50 Rev. B Description = 10 V These N-Channel enhancement mode power field effect GS transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to ...

Page 2

Package Marking and Ordering Information Device Marking Device FDP18N50 FDP18N50 FDPF18N50 FDPF18N50 Electrical Characteristics Symbol Parameter Off Characteristics BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature DSS ΔT / Coefficient J I Zero Gate Voltage Drain Current DSS I ...

Page 3

Typical Performance Characteristics Figure 1. On-Region Characteristics Top : 15.0 V 10.0 V 8.0 V 7.0 V 6 Bottom : 5 ...

Page 4

Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 1.1 1.0 0.9 0.8 -100 - Junction Temperature [ J Figure 9-1. Maximum Safe Operating Area - FDP18N50 Operation in This Area ...

Page 5

Typical Performance Characteristics Figure 11-1. Transient Thermal Response Curve - FDP18N50 Figure 11-2. Transient Thermal Response Curve - FDPF18N50 ...

Page 6

Unclamped Inductive Switching Test Circuit & Waveforms FDP18N50 / FDPF18N50 Rev. B Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms 6 www.fairchildsemi.com ...

Page 7

FDP18N50 / FDPF18N50 Rev. B Peak Diode Recovery dv/dt Test Circuit & Waveforms 7 www.fairchildsemi.com ...

Page 8

Mechanical Dimensions FDP18N50 / FDPF18N50 Rev 220 8 Dimensions in Millimeters www.fairchildsemi.com ...

Page 9

Mechanical Dimensions MAX1.47 0.80 ±0.10 0.35 ±0.10 2.54TYP [2.54 ] ±0.20 FDP18N50 / FDPF18N50 Rev. B TO-220F 10.16 ø3.18 ±0.20 ±0.10 (7.00) (1.00x45°) #1 2.54TYP [2.54 ] ±0.20 9.40 ±0.20 9 2.54 ±0.20 (0.70) +0.10 0.50 2.76 ±0.20 –0.05 www.fairchildsemi.com ...

Page 10

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® ACEx Across the board. Around the world.™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ ...

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