FDI3632 Fairchild Semiconductor, FDI3632 Datasheet

MOSFET N-CH 100V 80A TO-262AB

FDI3632

Manufacturer Part Number
FDI3632
Description
MOSFET N-CH 100V 80A TO-262AB
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDI3632

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
9 mOhm @ 80A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
80A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
110nC @ 10V
Input Capacitance (ciss) @ Vds
6000pF @ 25V
Power - Max
310W
Mounting Type
Through Hole
Package / Case
I²Pak, TO-262 (3 straight leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
7.5 m Ohms
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
80 A
Power Dissipation
310 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDI3632
Manufacturer:
FAIRCHILD
Quantity:
12 500
©2008 Fairchild Semiconductor Corporation
(FLANGE)
DRAIN
FDB3632 / FDP3632 / FDI3632 / FDH3632
N-Channel PowerTrench
100V, 80A, 9mΩ
Features
• r
• Q
• Low Miller Charge
• Low Q
• UIS Capability (Single Pulse and Repetitive Pulse)
• Qualified to AEC Q101
• RoHS Compliant
MOSFET Maximum Ratings
Thermal Characteristics
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
V
V
I
E
P
T
R
R
R
R
D
GS
J
DSS
AS
D
θJC
θJA
θJA
θJA
Symbol
, T
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
DS(ON)
g
(tot) = 84nC (Typ.), V
STG
FDP SERIES
TO-220AB
RR
= 7.5mΩ (Typ.), V
Body Diode
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
Continuous (T
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25
Operating and Storage Temperature
Thermal Resistance Junction to Case TO-220, TO-263, TO-262,
TO-247
Thermal Resistance Junction to Ambient TO-220, TO-262 (Note 2)
Thermal Resistance Junction to Ambient TO-263, 1in
Thermal Resistance Junction to Ambient TO-247 (Note 2)
G
D
S
GS
GS
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
amb
C
G
= 10V
S
< 111
= 10V, I
o
C
= 25
FDB SERIES
TO-263AB
o
o
C, V
C, V
D
®
= 80A
(FLANGE)
GS
MOSFET
GS
DRAIN
Parameter
= 10V)
T
= 10V, R
C
= 25°C unless otherwise noted
(FLANGE)
DRAIN
θJA
certification.
= 43
FDI SERIES
TO-262AB
o
C/W)
Applications
• DC/DC converters and Off-Line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 24V and 48V Systems
• High Voltage Synchronous Rectifier
• Direct Injection / Diesel Injection Systems
• 42V Automotive Load Control
• Electronic Valve Train Systems
2
copper pad area
S
D
G
FDH SERIESD
TO-247
FDB3632 / FDP3632 / FDI3632 / FDH3632 Rev. C2
-55 to 175
Ratings
Figure 4
DRAIN
S
2.07
0.48
100
393
310
±20
80
12
62
43
30
D
G
December 2008
G
Units
W/
o
o
o
o
D
S
C/W
C/W
C/W
C/W
mJ
o
W
A
V
V
A
A
C
o
C

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FDI3632 Summary of contents

Page 1

... FDI SERIES T = 25°C unless otherwise noted C Parameter 10V 10V C/W) θ copper pad area certification. December 2008 DRAIN G TO-247 FDH SERIESD Ratings 100 ± Figure 4 393 310 2.07 -55 to 175 0. FDB3632 / FDP3632 / FDI3632 / FDH3632 Rev Units C/W o C/W o C/W o C/W ...

Page 2

... N/A 50 units N/A 50 units N/A 30 units Min Typ Max 100 - - - - 150 250 C ±100 - - 0.0075 0.009 - 0.009 0.015 o =175 C - 0.018 0.022 C - 6000 - - 820 - - 200 - - 84 110 - 50V DD = 80A - 1.0mA - 102 - 213 - - 1. 1 120 FDB3632 / FDP3632 / FDI3632 / FDH3632 Rev. C2 Units V µ Ω ...

Page 3

... PULSE WIDTH (s) Figure 4. Peak Current Capability CURRENT LIMITED BY PACKAGE 50 75 100 125 150 CASE TEMPERATURE ( C) C Case Temperature NOTES: DUTY FACTOR PEAK θJC θ FOR TEMPERATURES o ABOVE 25 C DERATE PEAK CURRENT AS FOLLOWS: 175 - 150 - FDB3632 / FDP3632 / FDI3632 / FDH3632 Rev. C2 175 ...

Page 4

... Resistance vs Junction Temperature )/(1.3*RATED DSS DD *R)/(1.3*RATED +1] AS DSS DD o STARTING 150 TIME IN AVALANCHE (ms) AV Capability 10V PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX DRAIN TO SOURCE VOLTAGE ( 10V - 120 160 JUNCTION TEMPERATURE ( C) J FDB3632 / FDP3632 / FDI3632 / FDH3632 Rev =80A 200 ...

Page 5

... C) Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature ISS 100 0 Figure 14. Gate Charge Waveforms for Constant I = 250µ 120 160 JUNCTION TEMPERATURE ( 50V WAVEFORMS IN DESCENDING ORDER 80A 40A GATE CHARGE (nC) g Gate Currents FDB3632 / FDP3632 / FDI3632 / FDH3632 Rev. C2 200 100 ...

Page 6

... Fairchild Semiconductor Corporation DUT 0.01Ω Figure 16. Unclamped Energy Waveforms DUT g(TH g(REF) 0 Figure 18. Gate Charge Waveforms d(ON 90 DUT V GS 50% 10% 0 Figure 20. Switching Time Waveforms BV DSS g(TOT 10V GS Q gs2 OFF t d(OFF 10% 10% 90% 50% PULSE WIDTH FDB3632 / FDP3632 / FDI3632 / FDH3632 Rev 90% ...

Page 7

... JM 40 (EQ 0.1 is (0.645) DM Figure 21. Thermal Resistance vs Mounting dissipation. Pulse (EQ. 2) Area in Inches Squared (EQ. 3) Area in Centimeters Squared R = 26.51+ 19.84/(0.262+Area) EQ.2 θ 26.51+ 128/(1.69+Area) EQ.3 θJA 1 (6.45) (64. AREA, TOP COPPER AREA in (cm ) Pad Area FDB3632 / FDP3632 / FDI3632 / FDH3632 Rev ...

Page 8

... ESG 8 EVTHRES + LGATE EVTEMP 8 RGATE + MSTRO RLGATE CIN S1A S2A S1B S2B EGS EDS LDRAIN DRAIN RLDRAIN RSLC1 DBREAK ESLC DBODY RDRAIN EBREAK MWEAK MMED LSOURCE SOURCE 8 7 RSOURCE RLSOURCE RBREAK 17 18 RVTEMP VBAT + 8 22 RVTHRES FDB3632 / FDP3632 / FDI3632 / FDH3632 Rev ...

Page 9

... LGATE EVTEMP 8 RGATE MSTRO RLGATE CIN S1A S2A S1B S2B EGS EDS LDRAIN DRAIN RLDRAIN RSLC1 ISCL DBREAK 50 RDRAIN 11 DBODY 16 MWEAK EBREAK MMED + 17 18 LSOURCE - SOURCE 8 7 RSOURCE RLSOURCE RBREAK 17 18 RVTEMP VBAT + 8 22 RVTHRES FDB3632 / FDP3632 / FDI3632 / FDH3632 Rev ...

Page 10

... Fairchild Semiconductor Corporation JUNCTION th RTHERM1 CTHERM1 6 RTHERM2 CTHERM2 5 RTHERM3 CTHERM3 4 RTHERM4 CTHERM4 3 RTHERM5 CTHERM5 2 RTHERM6 CTHERM6 tl CASE FDB3632 / FDP3632 / FDI3632 / FDH3632 Rev. C2 ...

Page 11

... Semiconductor. The datasheet is for reference information only. tm TinyBoost™ TinyBuck™ ® TinyLogic TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ μSerDes™ ® UHC Ultra FRFET™ UniFET™ VCX™ VisualMax™ XS™ ® ® Definition FDB3632 / FDP3632 / FDI3632 / FDH3632 Rev. C2 Rev. I37 ...

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