MOSFET N-CH 500V 20A TO-220F

FDPF20N50

Manufacturer Part NumberFDPF20N50
DescriptionMOSFET N-CH 500V 20A TO-220F
ManufacturerFairchild Semiconductor
SeriesUniFET™
FDPF20N50 datasheet
 


Specifications of FDPF20N50

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs230 mOhm @ 10A, 10VDrain To Source Voltage (vdss)500V
Current - Continuous Drain (id) @ 25° C20AVgs(th) (max) @ Id5V @ 250µA
Gate Charge (qg) @ Vgs59.5nC @ 10VInput Capacitance (ciss) @ Vds3120pF @ 25V
Power - Max38.5WMounting TypeThrough Hole
Package / CaseTO-220-3 Full Pack (Straight Leads)ConfigurationSingle
Transistor PolarityN-ChannelResistance Drain-source Rds (on)0.23 Ohms
Forward Transconductance Gfs (max / Min)24.6 SDrain-source Breakdown Voltage500 V
Gate-source Breakdown Voltage+/- 30 VContinuous Drain Current20 A
Power Dissipation38.5 WMaximum Operating Temperature+ 150 C
Mounting StyleThrough HoleMinimum Operating Temperature- 55 C
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
1
Page 1
2
Page 2
3
Page 3
4
Page 4
5
Page 5
6
Page 6
7
Page 7
8
Page 8
9
Page 9
10
Page 10
Page 1/10

Download datasheet (468Kb)Embed
Next
FDP20N50 / FDPF20N50
500V N-Channel MOSFET
Features
• 20A, 500V, R
= 0.23Ω @V
DS(on)
GS
• Low gate charge ( typical 45.6 nC)
• Low C
( typical 27 pF)
rss
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
TO-220
G
D
S
FDP Series
Absolute Maximum Ratings
Symbol
V
Drain-Source Voltage
DSS
I
Drain Current
D
I
Drain Current
DM
V
Gate-Source voltage
GSS
E
Single Pulsed Avalanche Energy
AS
I
Avalanche Current
AR
E
Repetitive Avalanche Energy
AR
dv/dt
Peak Diode Recovery dv/dt
P
Power Dissipation
D
T
T
Operating and Storage Temperature Range
J,
STG
T
Maximum Lead Temperature for Soldering Purpose,
L
1/8” from Case for 5 Seconds
* Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
R
Thermal Resistance, Junction-to-Case
θJC
R
Thermal Resistance, Case-to-Sink Typ.
θCS
R
Thermal Resistance, Junction-to-Ambient
θJA
©2007 Fairchild Semiconductor Corporation
FDP20N50 / FDPF20N50 Rev. C
Description
= 10 V
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
TO-220F
D
G
S
FDPF Series
Parameter
- Continuous (T
= 25°C)
C
- Continuous (T
= 100°C)
C
- Pulsed
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
(T
= 25°C)
C
- Derate above 25°C
Parameter
1
April 2007
UniFET
D
G
S
FDP20N50
FDPF20N50
Unit
500
20
20 *
12.9
12.9 *
80
80 *
±30
1110
20
25
4.5
250
38.5
2.0
0.3
W/°C
-55 to +150
300
FDP20N50
FDPF20N50
Unit
°C/W
0.5
3.3
°C/W
0.5
--
°C/W
62.5
62.5
www.fairchildsemi.com
TM
V
A
A
A
V
mJ
A
mJ
V/ns
W
°C
°C

FDPF20N50 Summary of contents

  • Page 1

    ... Thermal Resistance, Case-to-Sink Typ. θCS R Thermal Resistance, Junction-to-Ambient θJA ©2007 Fairchild Semiconductor Corporation FDP20N50 / FDPF20N50 Rev. C Description = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to ...

  • Page 2

    ... Starting ≤ 20A, di/dt ≤ 200A/μs, V ≤ Starting DSS 4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ Essentially Independent of Operating Temperature Typical Characteristics FDP20N50 / FDPF20N50 Rev. C Package Reel Size TO-220 - TO-220F - T = 25°C unless otherwise noted C Conditions 250μ ...

  • Page 3

    ... I , Drain Current [A] D Figure 5. Capacitance Characteristics 6000 5000 C oss 4000 C iss 3000 2000 C 1000 rss Drain-Source Voltage [V] DS FDP20N50 / FDPF20N50 Rev. C Figure 2. Transfer Characteristics Notes : 1. 250 μ s Pulse Test Figure 4. Body Diode Forward Voltage V = 10V 20V Note : ...

  • Page 4

    ... Limited by R DS(on Drain-Source Voltage [V] DS Figure 10. Maximum Drain Currentvs. Case Temperature Case Temperature [ C FDP20N50 / FDPF20N50 Rev. C (Continued) Figure 8. On-Resistance Variation 3.0 2.5 2.0 1.5 1.0 * Notes : 0 250 μ 0.0 50 100 150 200 -100 o C] Figure 9-2. Maximum Safe Operating Area 2 ...

  • Page 5

    ... Typical Performance Characteristics Figure 11-1. Transient Thermal Response Curve - FDP20N50 Figure 11-2. Transient Thermal Response Curve - FDPF20N50 FDP20N50 / FDPF20N50 Rev. C (Continued θ θ θ θ www.fairchildsemi.com ...

  • Page 6

    ... Unclamped Inductive Switching Test Circuit & Waveforms FDP20N50 / FDPF20N50 Rev. C Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms 6 www.fairchildsemi.com ...

  • Page 7

    ... FDP20N50 / FDPF20N50 Rev. C Peak Diode Recovery dv/dt Test Circuit & Waveforms 7 www.fairchildsemi.com ...

  • Page 8

    ... Mechanical Dimensions FDP20N50 / FDPF20N50 Rev 220 8 Dimensions in Millimeters www.fairchildsemi.com ...

  • Page 9

    ... Mechanical Dimensions MAX1.47 0.80 ±0.10 0.35 ±0.10 2.54TYP [2.54 ] ±0.20 FDP20N50 / FDPF20N50 Rev. C TO-220F 10.16 ø3.18 ±0.20 ±0.10 (7.00) (1.00x45°) #1 2.54TYP [2.54 ] ±0.20 9.40 ±0.20 9 2.54 ±0.20 (0.70) +0.10 0.50 2.76 ±0.20 –0.05 www.fairchildsemi.com ...

  • Page 10

    ... Definition of Terms Datasheet Identification Product Status Advance Information Formative or In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDP20N50 / FDPF20N50 Rev. C i-Lo™ Power-SPM™ ® PowerTrench ImpliedDisconnect™ IntelliMAX™ Programmable Active Droop™ ® ISOPLANAR™ QFET MICROCOUPLER™ ...